Advances in wafer cleaning and particle removal technology

2006 ◽  
pp. 233-250
Keyword(s):  
Particle Removal ◽  
Wafer Cleaning ◽  
Removal Technology

High Efficiency Single Wafer Cleaning for Wafer Bonding-Based 3D Integration Applications

2012 ◽  
Vol 187 ◽  
pp. 269-272 ◽  
Author(s):  
Don Dussault ◽  
F. Fournel ◽  
V. Dragoi
Keyword(s):  
Removal Efficiency ◽  
Wafer Bonding ◽  
High Efficiency ◽  
Current Work ◽  
Particle Removal ◽  
3D Integration ◽  
Production Scale ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Transducer Design

Current work describes development, testing and verification of a single wafer megasonic cleaning method utilizing a transducer design that meets the extreme particle neutrality, Particle Removal Efficiency (PRE), and repeatability requirements of production scale wafer bonding and other applications requiring extremely low particle levels.

Evaluation of Very Dilute Alkaline Solutions for Wafer Cleaning with Megasonic Irradiation

2012 ◽  
Vol 195 ◽  
pp. 181-184 ◽  
Author(s):  
Ji Hyun Jeong ◽  
Bong Kyun Kang ◽  
Min Su Kim ◽  
Hong Seong Sohn ◽  
Ahmed A. Busnaina ◽  
...  
Keyword(s):  
Organic Contaminants ◽  
Ammonium Hydroxide ◽  
Alkaline Solutions ◽  
Particle Removal ◽  
Semiconductor Wafer ◽  
Material Loss ◽  
Wafer Cleaning ◽  
Chemical Residues ◽  
Ionic Contamination

In the semiconductor wafer cleaning, ammonium hydroxide based APM (ammonium peroxide mixture) has been widely used to remove particles and organic contaminants [. However as the film thickness and line width of semiconductor structure scales down rapidly, the material losses by etching reaction of alkaline chemicals can cause serious problem in yield loss due to electric failure. The presence of H2O2 could enhance the material loss on silicon wafer. Very dilute alkaline chemicals might be of interest since it could minimize any possible ionic contamination or chemical residues from chemicals as long as we control the surface roughness and particle removal efficiency. Also the characterization of these very dilute alkaline chemicals will be very useful for particle removal in gas dissolved DI water.

Studies of the Relationship between Megasonics, Surface Etching, and Particle Removal in SC-1 Solutions

1995 ◽  
Vol 386 ◽  
Author(s):  
S. L. Cohen ◽  
D. Rath ◽  
G. Lee ◽  
B. Furman ◽  
K. R. Pope ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Acoustic Streaming ◽  
Particle Surface ◽  
Native Oxide ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Thermally Activated ◽  
Surface Etching ◽  
Wafer Cleaning ◽  
Oxide Substrates

ABSTRACTWafer cleaning studies have been performed so as to understand the influence of acoustic (megasonic) energy on particle removal in dilute SC-1 solutions. Surface etching alone (up to 60Å) has been found to be insufficient to completely remove silicon nitride surface particles from native oxide surfaces in the absence of megasonics. For megasonic cleaning processes the minimum surface etching required for complete nitride particle removal is significantly lower (between 3–12Å) than for a non-megasonic process. The exact 'threshold' for surface etching will depend on the chemical nature of the particle/surface and the megasonics power. Megasonics energy does not appear to enhance chemical etching of the substrate, at least for silicon oxide substrates, however, it significantly improves particle removal. This data suggests that the particle removal process can benefit from both a thermally activated component (etching) as well as an acoustic component (cavitation/ acoustic streaming).

Practical considerations in Megasonic Wafer Cleaning

1997 ◽  
Vol 477 ◽  
Author(s):  
R. Mark Hall ◽  
Taura Jarvis ◽  
Thad Parry
Keyword(s):  
Experimental Data ◽  
Surface Roughness ◽  
Bath Temperature ◽  
Process Time ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Transducer Design ◽  
Gap Spacing ◽  
The Impact

ABSTRACTIn this study, critical hardware and process parameters are evaluated for their effect on performance in megasonic cleaning applications. Experimental data is presented which shows the impact of transducer design, bath temperature, process time, SC1 chemistry, and wafer gap spacing on particle removal and surface roughness. The ability to remove particles smaller than 0.1 um in size is also demonstrated.

Acoustic Field Analysis of a T Type Waveguide in Single Wafer Megasonic Cleaning and its Effect on Particle Removal

2007 ◽  
Vol 134 ◽  
pp. 229-232 ◽  
Author(s):  
Yang Lae Lee ◽  
Eui Su Lim ◽  
Kook Jin Kang ◽  
Hyun Se Kim ◽  
Tae Gon Kim ◽  
...  
Keyword(s):  
Finite Element Method ◽  
Acoustic Pressure ◽  
Field Analysis ◽  
Particle Removal ◽  
Pressure Measurements ◽  
Cleaning Efficiency ◽  
Transverse Waves ◽  
Megasonic Cleaning ◽  
Longitudinal Waves ◽  
Wafer Cleaning

T type megasonic waveguide was analyzed by finite element method (FEM), acoustic pressure measurements and particle removal efficiency for the single wafer cleaning application. Compared to conventional longitudinal waves, a transverse waves were generated in a T type waveguide. Not like longitudinal waves, transverse waves showed changes of direction and phase which increased the cleaning efficiency.

Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O3 and HF

2021 ◽  
Vol 314 ◽  
pp. 214-217
Author(s):  
Hyeon Joon Han ◽  
Hunhee Lee ◽  
Charles Kim ◽  
Yongmok Kim ◽  
Jinok Moon ◽  
...  
Keyword(s):  
Hydrofluoric Acid ◽  
Semiconductor Manufacturing ◽  
Ultrafine Particle ◽  
High Reactivity ◽  
High Impact ◽  
Manufacturing Processes ◽  
Particle Removal ◽  
Cleaning Process ◽  
High Concentration ◽  
Wafer Cleaning

Sulfuric Peroxide Mixture (SPM, H2SO4 + H2O2) has been widely used in semiconductor manufacturing processes due to its high reactivity and attractive price. However, SPM releases SO42- ions that can be high impact on the environmental contaminations. Therefore, the SPM process requires a high cost wastewater treatment. So, the development of alternative chemicals has been becoming an important task in the semiconductor manufacturing process. In this paper, we evaluated the feasibility of replacing SPM with dissolved ozone water (DIO3) in the wafer cleaning process, and confirmed that the Particle removal efficiency (PRE) was improved around 68% by mixing with diluted hydrofluoric acid (DHF). And, the PRE was also increased when the concentration of ozone in dissolved ozone water increased. Additionally the PRE was improved up to 98% by combining physical cleaning after O3 process.

SI3N4 Particle Removal Efficiency Study

1997 ◽  
Vol 477 ◽  
Author(s):  
Jane Qian Liu ◽  
Carolyn Lee ◽  
Joseph M. Rosamilia ◽  
Tom Boone ◽  
Veronica Czitrom ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Defect Density ◽  
Bath Temperature ◽  
Solution Chemistry ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Particle Contamination ◽  
The Impact ◽  
Improve Device

ABSTRACTControlling particle contamination in wafer cleaning is important to reduce defect density and improve device performance and yield. In this study, a screening experiment was employed to evaluate particle removal efficiency among different cleanings, including FSI BCLN, bench rinse and dry only, bench SC1/megasonic only, bench RCA cleaning, and bench RCA-based cleaning. To optimize particle removal efficiency in RCA-based cleaning, a design of experiment (DOE) has been done to investigate the impact of SC1/megasonic cleaning on Si3N4 particle removal efficiency. Bath temperature, megasonic power, and solution chemistry of SCI bath were evaluated. The removal efficiency in relations to particle sizes was also investigated

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