Particle Removal Technology for Semiconductor Chips by Using the Hydrogenated Ultrapure Water and Wiping Process

Author(s):  
Jin Li ◽  
Hiroshi Kikuchi ◽  
Norimasa Nagata ◽  
Junichi Ida ◽  
Yoichi Miyazaki
2019 ◽  
Vol 79 (12) ◽  
pp. 2387-2394 ◽  
Author(s):  
Honghai Xue ◽  
Siyu Gao ◽  
Na Zheng ◽  
Ming Li ◽  
Xue Wen ◽  
...  

Abstract The frequent detection of antibiotics in water bodies gives rise to concerns about their removal technology. In this study, the degradation kinetics and mechanisms of norfloxacin (NOR), a typical fluoroquinolone pharmaceutical, by the UV/peroxydisulfate (PDS) was investigated. NOR could be degraded effectively using this process, and the degradation rate increased with the increasing dosage of PDS but decreased with the increasing concentration of NOR. In real water, the degradation of NOR was slower than that in ultrapure water, which indicated that laboratory results cannot be directly used to predict the natural fate of antibiotics. Further experiments suggested that the degradation of NOR was the most fast under neutral condition, the existence of HA or FA inhibited the degradation of NOR, and the presence of inorganic ions (NO3−, Cl−, CO32− and HCO3−) had no significant effect on degradation of NOR. Total organic carbon (TOC) removal rate (40%) indicated NOR was not completely mineralized, and six transformation products were identified, and possible degradation pathways of NOR had been proposed. It can be prospected that UV/PDS technology could be used for advanced treatment of wastewater containing fluoroquinolones.


2016 ◽  
Vol 255 ◽  
pp. 172-175
Author(s):  
Joo Noh Kim ◽  
Jae Hong Lee ◽  
Seung Ho Kim ◽  
Jin Kyu Kim ◽  
Ki Hoon Choi ◽  
...  

We propose an optimal strategy for cleaning 20-nm contaminants in atmospheric pressure by using CO2 solid particles injected from a supersonic nozzle. We found that an excessively small exit diameter of the nozzle results in the shock wave, which decreases the particle removal efficiency (PRE). Based on the incompressible flow theory, we developed a supersonic nozzle that can issue CO2 solid particles without shock wave. The shape of CO2 beam and PRE of the developed nozzle are compared with the results of a pre-existing nozzle for vacuum condition by analyzing scanning electron microscopy (SEM) image of substrates. The results show that when we use the newly developed nozzle in atmospheric pressure, PRE is above 95 % without pattern damage. This work can pave the way for cleaning nanoscale contaminants that occur during manufacture of semiconductor chips at little cost.


2001 ◽  
Vol 76-77 ◽  
pp. 245-250 ◽  
Author(s):  
Hiroshi Morita ◽  
Jun ichi Ida ◽  
Osamu Ota ◽  
Kazumi Tsukamoto ◽  
Tadahiro Ohmi

2018 ◽  
Vol 57 (34) ◽  
pp. 11815-11825 ◽  
Author(s):  
Bo Wang ◽  
Si-Qing Li ◽  
Si-Jie Dong ◽  
Ru-Bin Xin ◽  
Rui-Zhi Jin ◽  
...  

2009 ◽  
Vol 145-146 ◽  
pp. 39-42 ◽  
Author(s):  
Michael T. Andreas ◽  
Kurt Wostyn ◽  
Masayuki Wada ◽  
Tom Janssens ◽  
Karine Kenis ◽  
...  

High velocity aerosol cleaning using ultrapure water or dilute aqueous solutions (e.g. dilute ammonia) is common in semiconductor IC fabrication [1]. This process combines droplet impact forces with continuous liquid flow for improved cleaning efficiency of sub-100nm particles. As with any physically enhanced cleaning process, improved particle removal can be accompanied by increased substrate damage, especially to smaller (<80nm) features [2]. Solvents such as N-methylpyrrolidone (NMP) and tetrahydrofurfuryl alcohol (THFA) are used for resist strip applications [3]. It is possible, and sometimes useful, to deliver these solvents through the same spray nozzle normally used for aqueous spray cleaning. In this presentation we explore the particle removal and substrate damage performance of 2-ethoxyethanol (EGEE), NMP and THFA as used in a conventional aerosol spray cleaning system


2021 ◽  
Vol 314 ◽  
pp. 222-227
Author(s):  
Yukifumi Yoshida ◽  
Katsuya Akiyama ◽  
Song Zhang ◽  
Dai Ueda ◽  
Masaki Inaba ◽  
...  

Wet cleaning has become challenging as the feature size of semiconductor devices decreased to sub-5 nm nodes. One of the key challenges is removing various types and sizes of particles and contamination from complex and fragile 3D structures without pattern damage and film loss. Conventional physical cleaning methods, such as dual-fluid spray or megasonic cleaning, are being used for the particle removal process. However, in advanced device nodes, these methods induce pattern damage and film loss. In this paper, we describe a novel particle removal technology called Nanolift which uses a polymer film consisting of two organic resins with different functions and achieved high particle removal efficiency on various types and sizes of particles with no pattern damage and minimum film loss.


1984 ◽  
Vol 75 ◽  
pp. 599-602
Author(s):  
T.V. Johnson ◽  
G.E. Morfill ◽  
E. Grun

A number of lines of evidence suggest that the particles making up the E-ring are small, on the order of a few microns or less in size (Terrile and Tokunaga, 1980, BAAS; Pang et al., 1982 Saturn meeting; Tucson, AZ). This suggests that a variety of electromagnetic and plasma affects may be important in considering the history of such particles. We have shown (Morfill et al., 1982, J. Geophys. Res., in press) that plasma drags forces from the corotating plasma will rapidly evolve E-ring particle orbits to increasing distance from Saturn until a point is reached where radiation drag forces acting to decrease orbital radius balance this outward acceleration. This occurs at approximately Rhea's orbit, although the exact value is subject to many uncertainties. The time scale for plasma drag to move particles from Enceladus' orbit to the outer E-ring is ~104yr. A variety of effects also act to remove particles, primarily sputtering by both high energy charged particles (Cheng et al., 1982, J. Geophys. Res., in press) and corotating plasma (Morfill et al., 1982). The time scale for sputtering away one micron particles is also short, 102 - 10 yrs. Thus the detailed particle density profile in the E-ring is set by a competition between orbit evolution and particle removal. The high density region near Enceladus' orbit may result from the sputtering yeild of corotating ions being less than unity at this radius (e.g. Eviatar et al., 1982, Saturn meeting). In any case, an active source of E-ring material is required if the feature is not very ephemeral - Enceladus itself, with its geologically recent surface, appears still to be the best candidate for the ultimate source of E-ring material.


Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).


2018 ◽  
Vol 52 (2) ◽  
pp. 187-199 ◽  
Author(s):  
Aya Sakaguchi ◽  
Haruka Chiga ◽  
Kazuya Tanaka ◽  
Haruo Tsuruta ◽  
Yoshio Takahashi

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