scholarly journals Special Articles on Technology and Its Characterization for Synthesis of Inorganic Materials. Preparation and Electric Properties of Ferroelectric Bi4Ti3O12 Thin Films by MOCVD.

1991 ◽  
pp. 1373-1378 ◽  
Author(s):  
Masaki MIYAJIMA ◽  
Rusul MUHAMMET ◽  
Masaru OKADA
Keyword(s):  
Thin Films ◽  
Electric Properties ◽  
Inorganic Materials ◽  
Materials Preparation

Progress of Novel Inkjet Technique for Inorganic Materials Preparation

2009 ◽  
Vol 24 (6) ◽  
pp. 1090-1096
Author(s):  
Zhuo WANG ◽  
Yong-Xiang LI ◽  
Qun-Bao YANG
Keyword(s):  
Inorganic Materials ◽  
Materials Preparation

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Structural and electric properties of TiB2 thin films by RF sputtering

2000 ◽  
Vol 45 (3-4) ◽  
pp. 143-148 ◽  
Author(s):  
A Shutou ◽  
T Matsui ◽  
H Tsuda ◽  
H Mabuchi ◽  
K Morii
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Electric Properties

Electric Properties of PZTN (65/35/x) Thin Films Deposited by Sol-Gel

2003 ◽  
Vol 293 (1) ◽  
pp. 135-143
Author(s):  
M. Pereira ◽  
I. Boerasu ◽  
M. J. M. Gomes ◽  
B. Watts ◽  
F. Leccabue
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Electric Properties

scholarly journals Electric and Magneto-Electric Properties of Cr2O3 Thin Films

2014 ◽  
Vol 12 (0) ◽  
pp. 373-376 ◽  
Author(s):  
Koji Ichikawa ◽  
Takeshi Yokota ◽  
Manabu Gomi
Keyword(s):  
Thin Films ◽  
Electric Properties

scholarly journals Preparation, Magnetic and Electric Properties of (110)-Oriented Ordered Fe2-xTixO3 Thin Films

2014 ◽  
Vol 61 (S1) ◽  
pp. S330-S332
Author(s):  
T. Matsumoto ◽  
N. Suzuki ◽  
S. Kanamaru ◽  
H. Hashimoto ◽  
M. Nakanishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Properties ◽  
Magnetic And Electric Properties

Reactive Ion Etching Damage to Ferroelectric Thin Films Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
W. Pan ◽  
C.L. Thio ◽  
S.B. Desu ◽  
Cheewon Chung
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Reactive Ion Etching ◽  
Ferroelectric Thin Films ◽  
Electric Properties ◽  
Etching Time ◽  
Ion Etching ◽  
Before And After ◽  
Ferroelectric Capacitors

ABSTRACTReactive ion etching damage to sputtered Pt/PZT/Pt ferroelectric capacitors was studied using Ar and CHCIFCF3 etch gases. Electrical properties, hysteresis, fatigue, and leakage current of PZT capacitors, before and after etching, were compared to examine the etching damage. It is found that the damage effects depend on etching time and are mainly due to the physical bombardment effect. The PZT capacitors etched with CHCIFCF3 plasma showed less damage than those etched in Ar plasma. The electric properties of etched Pt/PZT/Pt capacitors are recovered by annealing at 400 °C for 30min.

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