Thermal Conductivity and Thermal Interface Resistance Measurements of Thin Films using 3ω Method

We consider different sources of potential systematic errors in the thermal interface resistance measurements. Sub-continuum heat conduction and spatial non-equilibrium between electrons and phonons in a metal may lead to overestimation of the thermal interface resistance. The use of an erroneous substrate thermal conductivity can also cause significant systematic errors in steady- and quasi-steady state measurements of the thermal interface resistance. Our results highlight an urgent need for new systematic experimental studies to confirm the magnitude of intrinsic thermal interface resistance.

Download Full-text

Numerical simulation of thermal conductivity of MMCs: effect of thermal interface resistance

Materials Science and Technology ◽

10.1179/026708303225004305 ◽

2003 ◽

Vol 19 (8) ◽

pp. 1107-1114 ◽

Cited By ~ 14

Author(s):

D. Duschlbauer ◽

H. J. Böhm ◽

H. E. Pettermann

Keyword(s):

Thermal Conductivity ◽

Numerical Simulation ◽

Thermal Interface ◽

Interface Resistance ◽

Thermal Interface Resistance

Download Full-text

Characterization of a Liquid-Metal Micro Droplets Thermal Interface Material

Volume 7: Fluid Flow, Heat Transfer and Thermal Systems, Parts A and B ◽

10.1115/imece2010-39609 ◽

2010 ◽

Author(s):

Amer M. Hamdan ◽

Aric R. McLanahan ◽

Robert F. Richards ◽

Cecilia D. Richards

Keyword(s):

Liquid Metal ◽

Thermal Resistance ◽

Contact Resistance ◽

Applied Load ◽

Thermal Interface Material ◽

Thermal Interface ◽

Interface Resistance ◽

Thermal Interface Resistance ◽

Droplet Array

This work presents the characterization of a thermal interface material consisting of an array of mercury micro droplets deposited on a silicon die. Three arrays were tested, a 40 × 40 array (1600 grid) and two 20 × 20 arrays (400 grid). All arrays were assembled on a 4 × 4 mm2 silicon die. An experimental facility which measures the thermal resistance across the mercury array under steady state conditions is described. The thermal interface resistance of the arrays was characterized as a function of the applied load. A thermal interface resistance as low as 0.253 mm2 K W−1 was measured. A model to predict the thermal resistance of a liquid-metal micro droplet array was developed and compared to the experimental results. The model predicts the deformation of the droplet array under an applied load and then the geometry of the deformed droplets is used to predict the thermal resistance of the array. The contact resistance of the mercury arrays was estimated based on the experimental and model data. An average contact resistance was estimated to be 0.14 mm2 K W−1.

Download Full-text

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽

10.1557/adv.2016.142 ◽

2016 ◽

Vol 1 (22) ◽

pp. 1631-1636 ◽

Cited By ~ 2

Author(s):

Boya Cui ◽

D. Bruce Buchholz ◽

Li Zeng ◽

Michael Bedzyk ◽

Robert P. H. Chang ◽

...

Keyword(s):

Thin Films ◽

Thermal Conductivity ◽

Room Temperature ◽

Storage Time ◽

Laser Deposition ◽

Low Oxygen ◽

X Ray Diffraction ◽

3Ω Method ◽

X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Download Full-text