scholarly journals Materials analysis by ion channeling at "Demokritos"

2020 ◽  
Vol 5 ◽  
pp. 204
Author(s):  
S. Harissopulos ◽  
S. Kossionides ◽  
T. Paradellis ◽  
G. Maggiore
Keyword(s):  
Nuclear Physics ◽  
Rutherford Backscattering ◽  
Materials Analysis ◽  
Ion Channeling ◽  
Backscattering Method

A new fully automated Goniometer system installed recently at the Institute of Nuclear Physics of "Demokritos" is presented. This system enables to perform materials analysis not only via the Rutherford Backscattering method, which has been used so far at "Demokritos", but also by the ion channeling technique. The first experiments carried out using the Goniometer are also presented.

The Use of Ion Channeling Axial Scans in the Study of Ion-Implanted Al2O3

1984 ◽  
Vol 41 ◽  
Author(s):  
G. C. Farlow ◽  
C. W. White ◽  
B. R. Appleton ◽  
P. S. Sklad ◽  
C. J. McHargue
Keyword(s):  
Rutherford Backscattering ◽  
Ion Channeling ◽  
Ion Implanted

AbstractRutherford backscattering and ion channeling-axial scans have been used to study lattice sites for several impurities implanted into A12O3. The case of Ga implanted in A12O3 is discussed and is shown to be substitutional on the Al sublattice. Additionally, the use of this technique in the study of precipitates in A12O3 is discussed with reference to Fe implanted A12O3 which was annealed in either oxygen or hydrogen.

Rutherford Backscattering (RBS) and Channeling Studies of Defects in Arsenic Implanted Silicon Induced by Arsenic Clustering

1986 ◽  
Vol 82 ◽  
Author(s):  
Frank A. Baiocchi ◽  
Avid Kamgar
Keyword(s):  
High Temperature ◽  
Thermal Treatment ◽  
Low Temperature ◽  
Rutherford Backscattering ◽  
Rapid Thermal Anneal ◽  
Ion Channeling ◽  
Disordered Layer

ABSTRACTRBS/Channeling measurements have been used to characterize the Si recrystallization and As substitutionality of <100> Si wafers implanted with 100 keV As at two doses after multiple thermal anneals. It is found that low temperature thermal treatment after a high temperature rapid thermal anneal results in deactivation of the implant, presumably due to Arsenic clustering. The ion channeling results indicate the growth of a disordered layer in the silicon after the second anneal at a depth corresponding to the peak of the Arsenic implant concentration. The number of displaced Si atoms is found to be 5-10 times greater than the number of displaced As atoms. This indicates that both As clustering and growth of Si defects should be considered as possible mechanisms for the electrical deactivation of the implanted Si after post anneal.

Thermal Pulse Annealing of Hg1−xCdxTe

1982 ◽  
Vol 13 ◽  
Author(s):  
K. C. Dimiduk ◽  
W. G. Opyd ◽  
M. E. Greiner ◽  
J. F. Gibbons ◽  
T. W. Sigmon
Keyword(s):  
Loss Rate ◽  
Rutherford Backscattering ◽  
Material Composition ◽  
Crystal Quality ◽  
Rate Data ◽  
Near Surface ◽  
Thermal Pulse ◽  
Ion Channeling

ABSTRACTThermal pulse annealing has been used to modify the near surface of Hg1−xCdxTe. Using anneals of approximately 260°C for seven seconds, the crystal quality of epitaxial HgCdTe surfaces can be improved as observed by MeV He+ ion channeling. Similar anneals have also been used to repair the damage resulting from a 250 keV, 101511 B/cm2 implant into HgCdTe held at LN2. For higher temperatures and/or longer anneals, surface Hg loss is observed. Rutherford Backscattering measurements are used to measure this loss. The resulting loss rate data is described by No= A exp (−ΔE/kT) where A and ΔE depend on the material composition with A = 1029, ΔE = 1.8 eV and A = 1036, ΔE = 2.6 eV for x = 0.23 and 0.4, respectively.

Nondestructive surface analysis by nuclear scattering techniques

1987 ◽  
Vol 65 (8) ◽  
pp. 950-955 ◽  
Author(s):  
S. C. Gujrathi ◽  
P. Aubry ◽  
L. Lemay ◽  
J. -P. Martin
Keyword(s):  
Surface Analysis ◽  
Nuclear Physics ◽  
Ion Beam ◽  
Heavy Ion ◽  
Rutherford Backscattering ◽  
Nuclear Scattering ◽  
Elastic Recoil ◽  
Accelerator Facility ◽  
Elastic Recoil Detection ◽  
The Masses

An elastic-recoil detection (ERD) technique is developed and successfully applied in the simultaneous, nondestructive multielement depth-profile studies of thin films with thicknesses up to 2 μm, used in various material technologies. In this technique, the light elements are knocked out of the target by using an energetic heavy-ion beam obtained from the Tandom Accelerator Facility of the Nuclear Physics Laboratory. A time-of-flight method is used to separate the masses and the energies of the recoiled elements as well as the Rutherford backscattering incident ions. Using 30 MeV35Cl as the beam probe, we get an observed surface resolution of better than 100 Å at a 30° detection angle. Typical mass resolutions for energies >5 MeV are 0.2 amu in the C region and 0.7 amu in the Si region. The factors related to the mass and depth resolutions, probing depth, and approximate detection limit are systematically studied using 19F, 35Cl, and 79Br as incident beams. This newly developed ERD method, along with the already existing Rutherford backscattering (RBS) technique, makes the Nuclear Scattering Facility at the Université de Montréal unique for surface analysis.

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