Rutherford Backscattering (RBS) and Channeling Studies of Defects in Arsenic Implanted Silicon Induced by Arsenic Clustering

1986 ◽  
Vol 82 ◽  
Author(s):  
Frank A. Baiocchi ◽  
Avid Kamgar

ABSTRACTRBS/Channeling measurements have been used to characterize the Si recrystallization and As substitutionality of <100> Si wafers implanted with 100 keV As at two doses after multiple thermal anneals. It is found that low temperature thermal treatment after a high temperature rapid thermal anneal results in deactivation of the implant, presumably due to Arsenic clustering. The ion channeling results indicate the growth of a disordered layer in the silicon after the second anneal at a depth corresponding to the peak of the Arsenic implant concentration. The number of displaced Si atoms is found to be 5-10 times greater than the number of displaced As atoms. This indicates that both As clustering and growth of Si defects should be considered as possible mechanisms for the electrical deactivation of the implanted Si after post anneal.

2017 ◽  
Vol 265 ◽  
pp. 456-462 ◽  
Author(s):  
P.L. Reznik ◽  
Mikhail Lobanov

Studies have been conducted as to the effect of Cu, Mn, Fe concentration changes in Al-Cu-Mn-Fe-Ti alloy, the conditions of thermal and deformational treatment of ingots and extruded rods 40 mm in diameter on the microstructure, phase composition and mechanical properties. It has been determined that changing Al-6.3Cu-0.3Mn-0.17Fe-0.15Ti alloy to Al-6.5Cu-0.7Mn-0.11Fe-0.15Ti causes an increase in the strength characteristics of extruded rods at the room temperature both after molding and in tempered and aged conditions, irrespective of the conditions of thermal treatment of the initial ingot (low-temperature annealing 420 °С for 2 h, or high-temperature annealing at 530 °С for 12 h). Increasing the extruding temperature from 330 to 480 °С, along with increasing Cu, Mn and decreasing Fe in the alloy Al-Cu-Mn-Ti, is accompanied by the increased level of ultimate strength in a quenched condition by 25% to 410 MPa, irrespective of the annealing conditions of the original ingot. An opportunity to apply the Al-6.3Cu-0.3Mn-0.17Fe-0.15Ti alloy with low-temperature annealing at 420 °С for 2 h and the molding temperature of 330 °С has been found to produce rods where, in the condition of full thermal treatment (tempering at 535 °С + aging at 200 °С for 8 hours), a structure is formed that ensures satisfactory characteristics of high temperature strength by resisting to fracture for more than 100 hours at 300 °С and 70 MPa.


1996 ◽  
Vol 441 ◽  
Author(s):  
Tord Karlin ◽  
Martin Samuelsson ◽  
Stefan Nygren ◽  
Mikael östling

AbstractULSI packing density calls for sub-micron line widths, but on n-type polysilicon this can lead to incomplete titanium silicide C49 to C54 phase transformation after a conventional two step rapid thermal anneal (RTA). This study compares three different ion beam amorphization techniques: preamorphization, ion beam mixing and silicide amorphization, aiming at a complete phase transformation for submicron silicide lines. For preamorphization, an arsenic implantation at moderate energies (35–75 keV) was used to amorphize the top layer of the polysilicon prior to the titanium deposition. Ion beam mixing used a high-energy (200 keV) arsenic implantation after the titanium deposition to create an amorphous mix of silicon and titanium. These two methods did, each by themselves, lead to an increased fraction of C54 silicide grains already during the low temperature RTA, and a complete phase transformation during the subsequent high temperature RTA. Both methods lowered the thickness difference between titanium silicide on p- and n-type silicon. Silicide amorphization with 75 keV arsenic or 100 keV antimony, applied before the second RTA, did not significantly improve the silicide phase transformation.


1986 ◽  
Vol 77 ◽  
Author(s):  
J. D. Flood ◽  
G. Bahir ◽  
J. L. Merz ◽  
J. Kobayashi ◽  
T. Fukunaga ◽  
...  

ABSTRACTThe enhanced disordering of GaAs/AlGaAs superlattices by diffusion of Zn or Si has been reported by many authors. In the case of Si diffusion, the Si can be introduced during epitaxial growth, by implantation, or by diffusion from a sputtered Si mask. In this paper ion implantation is investigated, and the effect of rapid thermal annealing (RTA), used to minimize Si diffusion while eliminating the implant damage, is compared with furnace annealing (FA). Using low temperature photoluminescence (PL) and SIMS, it is found that no disordering of a GaAs/Al0.5Ga0.5As superlattice takes place for a 2 sec anneal at 900°C, and very minimal partial disordering is observed (reproducibly) for a 10 sec anneal at 970°C. This is in sharp contrast with the FA case (850°C for 30 min), for which significant disordering occurs. The PL spectra show luminescence from both GaAs and GaAs/Al0.5Ga0.5As layers in the case of high-temperature RTA suggesting that recrystallization has occurred without disorder, whereas strong emission is observed after FA which corresponds to a disordered layer of average-composition GaAs/Al0.15Ga0.25As In both cases, PL indicates that annealing of the implant damage has occurred. Thus, damage can be eliminated either with or without disordering the superlattice by using FA or RTA, respectively. This is important for 2-D electron gas structures, for which no broadening of the hetero-interface is desired.


Author(s):  
P.P.K. Smith

Grains of pigeonite, a calcium-poor silicate mineral of the pyroxene group, from the Whin Sill dolerite have been ion-thinned and examined by TEM. The pigeonite is strongly zoned chemically from the composition Wo8En64FS28 in the core to Wo13En34FS53 at the rim. Two phase transformations have occurred during the cooling of this pigeonite:- exsolution of augite, a more calcic pyroxene, and inversion of the pigeonite from the high- temperature C face-centred form to the low-temperature primitive form, with the formation of antiphase boundaries (APB's). Different sequences of these exsolution and inversion reactions, together with different nucleation mechanisms of the augite, have created three distinct microstructures depending on the position in the grain.In the core of the grains small platelets of augite about 0.02μm thick have farmed parallel to the (001) plane (Fig. 1). These are thought to have exsolved by homogeneous nucleation. Subsequently the inversion of the pigeonite has led to the creation of APB's.


2020 ◽  
Vol 10 (10) ◽  
pp. 59-67
Author(s):  
Victor N. ANTIPOV ◽  
◽  
Andrey D. GROZOV ◽  
Anna V. IVANOVA ◽  
◽  
...  

The overall dimensions and mass of wind power units with capacities larger than 10 MW can be improved and their cost can be decreased by developing and constructing superconducting synchronous generators. The article analyzes foreign conceptual designs of superconducting synchronous generators based on different principles: with the use of high- and low-temperature superconductivity, fully superconducting or only with a superconducting excitation system, and with the use of different materials (MgB2, Bi2223, YBCO). A high cost of superconducting materials is the main factor impeding commercial application of superconducting generators. In view of the state of the art in the technology for manufacturing superconductors and their cost, a conclusion is drawn, according to which a synchronous gearless superconducting wind generator with a capacity of 10 MW with the field winding made of a high-temperature superconducting material (MgB2, Bi-2223 or YBCO) with the «ferromagnetic stator — ferromagnetic rotor» topology, with the stator diameter equal to 7—9 m, and with the number of poles equal to 32—40 has prospects for its practical use in the nearest future.


Alloy Digest ◽  
1980 ◽  
Vol 29 (12) ◽  

Abstract SOMERS LTA Copper is a wrought copper foil that can be annealed at 350 F in 15 minutes to the full-soft condition; its use simplifies the manufacture of printed circuits (LTA = Low-Temperature Annealable). LTA Copper is especially useful for foil weights up to and including one ounce per square foot (0.0014-inch thick) for laminating to high-temperature dielectric substrates. This datasheet provides information on composition, physical properties, and elasticity as well as fatigue. It also includes information on forming, heat treating, and machining. Filing Code: Cu-407. Producer or source: Olin Corporation.


Alloy Digest ◽  
1968 ◽  
Vol 17 (4) ◽  

Abstract ENDURO 19-9-SMo is a 19-9 type stainless steel containing molybdenum to greatly increase its resistance to attack by most chemicals. It is nonmagnetic and does not respond to thermal treatment for hardening. This datasheet provides information on composition, physical properties, microstructure, hardness, elasticity, and tensile properties as well as fracture toughness and creep. It also includes information on low and high temperature performance, and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: SS-207. Producer or source: Republic Steel Corporation.


Alloy Digest ◽  
1958 ◽  
Vol 7 (2) ◽  

Abstract CHRO-MOW is a tough hot work steel which will harden from a relatively low temperature in air. It possesses a desirable combination of toughness and red-hardness. This datasheet provides information on composition, physical properties, hardness, and tensile properties. It also includes information on high temperature performance as well as forming, heat treating, and machining. Filing Code: TS-67. Producer or source: Crucible Steel Company of America.


Alloy Digest ◽  
1960 ◽  
Vol 9 (3) ◽  

Abstract NICLOY 5 is a low carbon, nickel ferritic steel reecommended for low temperature service. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness. It also includes information on low and high temperature performance, and corrosion resistance as well as forming, heat treating, machining, and joining. Filing Code: SA-96. Producer or source: Babcock & Wilcox Company.


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