scholarly journals Analysis of Thin Films by Time-of-Flight Low Energy Ion Scattering

2007 ◽  
Vol 111 (3) ◽  
pp. 335-341
Author(s):  
S. Průša ◽  
M. Kolíbal ◽  
P. Bábor ◽  
J. Mach ◽  
T. Šikola
Keyword(s):  
Thin Films ◽  
Time Of Flight ◽  
Low Energy ◽  
Ion Scattering ◽  
Low Energy Ion Scattering

scholarly journals Oxidation of metal thin films by atomic oxygen: A low energy ion scattering study

2019 ◽  
Vol 126 (15) ◽  
pp. 155301 ◽  
Author(s):  
C. R. Stilhano Vilas Boas ◽  
J. M. Sturm ◽  
F. Bijkerk
Keyword(s):  
Thin Films ◽  
Atomic Oxygen ◽  
Low Energy ◽  
Ion Scattering ◽  
Metal Thin Films ◽  
Low Energy Ion Scattering ◽  
Scattering Study

Comparison of a time-of-flight system with an electrostatic analyzer in low-energy ion scattering

1978 ◽  
Vol 149 (1-3) ◽  
pp. 591-594 ◽  
Author(s):  
T.M. Buck ◽  
G.H. Wheatley ◽  
G.L. Miller ◽  
D.A.H. Robinson ◽  
Y.-S. Chen
Keyword(s):  
Time Of Flight ◽  
Low Energy ◽  
Ion Scattering ◽  
Flight System ◽  
Electrostatic Analyzer ◽  
Low Energy Ion Scattering

Hydrogen Adsorption Effects on Thin Film Growth Mode Studied by Ion Scattering

1991 ◽  
Vol 237 ◽  
Author(s):  
F. ShojiK ◽  
K. Sumitomo ◽  
T. Kinoshita ◽  
Y. Tanaka ◽  
K. Oura ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Process ◽  
Hydrogen Adsorption ◽  
Film Growth ◽  
Low Energy ◽  
Ion Scattering ◽  
Detection Analysis ◽  
Low Energy Ion Scattering ◽  
Flight Mode ◽  
Ion Scattering Spectroscopy

ABSTRACTThe effects of hydrogen adsorption on the growth process and structures of Ag thin films on Si(111)-7×7 surfaces has been studied. The growth process and film structures are investigated by low energy electron diffraction(LEED) and low energy ion scattering spectroscopy of time of flight mode(TOF-ICISS). The hydrogen adsorbed on the surface is investigated by low energy recoil detection analysis(TOF-ERDA). We have found that Ag thin films deposited onto hydrogen covered Si(111) surfaces grow with a mode definitely different from that on clean surfaces.

A combined time-of-flight and electrostatic analyzer for low-energy ion scattering

1999 ◽  
Vol 70 (10) ◽  
pp. 3910-3914 ◽  
Author(s):  
A. W. Denier van der Gon ◽  
M. A. Reijme ◽  
R. F. Rumphorst ◽  
A. J. H. Maas ◽  
H. H. Brongersma
Keyword(s):  
Time Of Flight ◽  
Low Energy ◽  
Ion Scattering ◽  
Electrostatic Analyzer ◽  
Low Energy Ion Scattering

Quantitative analysis of ultra thin layer growth by time-of-flight low energy ion scattering

2008 ◽  
Vol 92 (1) ◽  
pp. 011929 ◽  
Author(s):  
D. Primetzhofer ◽  
S. N. Markin ◽  
P. Zeppenfeld ◽  
P. Bauer ◽  
S. Prusa ◽  
...  
Keyword(s):  
Quantitative Analysis ◽  
Thin Layer ◽  
Time Of Flight ◽  
Layer Growth ◽  
Low Energy ◽  
Ion Scattering ◽  
Low Energy Ion Scattering

In vacuo growth studies of Ru thin films on Si, SiN, and SiO2 by high-sensitivity low energy ion scattering

2016 ◽  
Vol 120 (6) ◽  
pp. 065303 ◽  
Author(s):  
R. Coloma Ribera ◽  
R. W. E. van de Kruijs ◽  
J. M. Sturm ◽  
A. E. Yakshin ◽  
F. Bijkerk
Keyword(s):  
Thin Films ◽  
High Sensitivity ◽  
Low Energy ◽  
Ion Scattering ◽  
Growth Studies ◽  
Low Energy Ion Scattering

High resolution time-of-flight low energy ion scattering

2005 ◽  
Vol 230 (1-4) ◽  
pp. 398-401 ◽  
Author(s):  
M. Draxler ◽  
S.N. Markin ◽  
M. Kolíbal ◽  
S. Průša ◽  
T. Šikola ◽  
...  
Keyword(s):  
High Resolution ◽  
Time Of Flight ◽  
Low Energy ◽  
Ion Scattering ◽  
Resolution Time ◽  
Low Energy Ion Scattering
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