The nitridation of GaAs and GaN deposition on GaAs examined by in situ time-of-flight low energy ion scattering and RHEED

1996 ◽  
Vol 164 (1-4) ◽  
pp. 185-189 ◽  
Author(s):  
A. Bensaoula ◽  
W.T. Taferner ◽  
E. Kim ◽  
A. Bousetta
1994 ◽  
Vol 12 (6) ◽  
pp. 3012-3017 ◽  
Author(s):  
W. T. Taferner ◽  
A. Freundlich ◽  
A. Bensaoula ◽  
A. Ignatiev ◽  
Kelley Waters ◽  
...  

1978 ◽  
Vol 149 (1-3) ◽  
pp. 591-594 ◽  
Author(s):  
T.M. Buck ◽  
G.H. Wheatley ◽  
G.L. Miller ◽  
D.A.H. Robinson ◽  
Y.-S. Chen

1999 ◽  
Vol 70 (10) ◽  
pp. 3910-3914 ◽  
Author(s):  
A. W. Denier van der Gon ◽  
M. A. Reijme ◽  
R. F. Rumphorst ◽  
A. J. H. Maas ◽  
H. H. Brongersma

2008 ◽  
Vol 92 (1) ◽  
pp. 011929 ◽  
Author(s):  
D. Primetzhofer ◽  
S. N. Markin ◽  
P. Zeppenfeld ◽  
P. Bauer ◽  
S. Prusa ◽  
...  

1996 ◽  
Vol 35 (Part 1, No. 3) ◽  
pp. 1937-1939 ◽  
Author(s):  
Miyako Matsui ◽  
Fumihiko Uchida ◽  
Kiyokazu Nakagawa ◽  
Akio Nishida

Author(s):  
M. Draxler ◽  
S.N. Markin ◽  
M. Kolíbal ◽  
S. Průša ◽  
T. Šikola ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document