The investigation of GaN growth on silicon and sapphire using in-situ time-of-flight low energy ion scattering and RHEED
1996 ◽
Vol 164
(1-4)
◽
pp. 167-174
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1996 ◽
Vol 164
(1-4)
◽
pp. 185-189
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1994 ◽
Vol 12
(6)
◽
pp. 3012-3017
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1978 ◽
Vol 149
(1-3)
◽
pp. 591-594
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Keyword(s):
1999 ◽
Vol 70
(10)
◽
pp. 3910-3914
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Keyword(s):
Keyword(s):
1996 ◽
Vol 35
(Part 1, No. 3)
◽
pp. 1937-1939
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Keyword(s):
Keyword(s):
Keyword(s):
2005 ◽
Vol 230
(1-4)
◽
pp. 398-401
◽
Keyword(s):