The Effect of Carbon Layer Thickness on the Electrical and Optical Properties of Si - CNT Junction

2014 ◽  
Vol 9 (2) ◽  
pp. 72-74
Author(s):  
Mohammed M. Younis ◽  
Bassam M. Mostafa ◽  
Anwar M. Ezzat
1991 ◽  
Vol 219 ◽  
Author(s):  
Jin Jang ◽  
Tae Gon Kim ◽  
Song Ok Koh ◽  
Hyon Kyun Song ◽  
Kyu Chang Park ◽  
...  

ABSTRACTWe studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.


RSC Advances ◽  
2016 ◽  
Vol 6 (37) ◽  
pp. 30972-30977 ◽  
Author(s):  
Jinyoung Hwang ◽  
Youngseon Shim ◽  
Seon-Mi Yoon ◽  
Sang Hyun Lee ◽  
Sung-Hoon Park

By adjusting the polyvinylpyrrolidone (PVP) capping layer thickness on silver nanowire networks, improved electrical and optical properties were obtained, which was confirmed both experimentally and theoretically (Molecular dynamics and Monte Carlo simulations).


1981 ◽  
Vol 42 (C4) ◽  
pp. C4-869-C4-872
Author(s):  
R. T. Phillips ◽  
A. J. Mackintosh ◽  
A. D. Yoffe

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