315 Ultra-Precision Cutting of Single Crystal Silicon using Diamond Tool : Relation between Machined Surface Roughness and Parameters of Cutting Process

2007 ◽  
Vol 2007 (0) ◽  
pp. 123-124
Author(s):  
Eiji KONDO ◽  
Ryuichi IWAMOTO ◽  
Satoko NAGAYAMA ◽  
Norio KAWAGOISHI
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Diamond Tool ◽  
Single Crystal Silicon ◽  
Cutting Process ◽  
Machined Surface ◽  
Crystal Silicon ◽  
Machined Surface Roughness ◽  
Ultra Precision

Graphitization Wear of Diamond Tool in Nanometric Cutting of Single Crystal Silicon

2014 ◽  
Vol 609-610 ◽  
pp. 751-757 ◽  
Author(s):  
Jia Chun Wang ◽  
Ming Ming Xin ◽  
Si Yu Cao ◽  
Teng Zhao
Keyword(s):  
Diamond Tool ◽  
Single Crystal Silicon ◽  
Dynamics Modeling ◽  
Machined Surface ◽  
Crystal Silicon ◽  
Nanometric Cutting ◽  
Coordination Numbers ◽  
Molecular Dynamics Modeling ◽  
Ultra Precision

During ultra-precision cutting of brittle materials, the wear of diamond tool seriously affects the quality of machined surface. By molecular dynamics modeling of nanometric cutting, the generation of graphitization and its formation process at the cutting edge of tool are observed. By analyzing the process, the reason of the graphitization wear is mainly thermo-chemical reactions. By calculating the changes of coordination numbers of the tool atoms, graphitization conversion rate keeps increasing along the cutting process but gets stable after a certain length, which indicates the graphitization wear will occur in the same process.

Monitoring for Ultra-Precision Cutting Process of Single Crystal Silicon

2005 ◽  
Vol 2005.3 (0) ◽  
pp. 905-910
Author(s):  
Ryuichi IWAMOTO ◽  
Noriyuki OKUBO ◽  
Eiji KONDO ◽  
Koichi ICHIKI ◽  
Norio KAWAGOISHI
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Cutting Process ◽  
Crystal Silicon ◽  
Ultra Precision

Nanoindentation Characterization of Single-Crystal Silicon With Oxide Film

2021 ◽  
Author(s):  
Lianmin Yin ◽  
Yifan Dai ◽  
Hao Hu
Keyword(s):  
Mechanical Properties ◽  
Plastic Deformation ◽  
Oxide Film ◽  
Single Crystal ◽  
Deformation Zone ◽  
Single Crystal Silicon ◽  
Plastic Deformation Zone ◽  
Crystal Silicon ◽  
Ultra Precision

Abstract In order to obtain ultra-smooth surfaces of single-crystal silicon in ultra-precision machining, an accurate study of the deformation mechanism, mechanical properties, and the effect of oxide film under load is required. The mechanical properties of single-crystal silicon and the phase transition after nanoindentation experiments are investigated by nanoindentation and Raman spectroscopy, respectively. It is found that pop-in events appear in the theoretical elastic domain of single-crystal silicon due to the presence of oxide films, which directly leads the single crystal silicon from the elastic deformation zone into the plastic deformation zone. In addition, the mechanical properties of single-crystal silicon are more accurately measured after it has entered the full plastic deformation.

scholarly journals Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
Bin Xin ◽  
Wei Liu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Electrochemical Machining ◽  
Single Crystal Silicon ◽  
Recast Layer ◽  
Movement Speed ◽  
Crystal Silicon ◽  
Wedm Process

During the wire electrical discharge machining (WEDM) process, a large number of discharge pits and a recast layer are easily generated on the workpiece surface, resulting in high surface roughness. A discharge forming cutting-electrochemical machining method for fabricating single-crystal silicon is proposed in this study to solve this problem. On the same processing equipment, single-crystal silicon is first cut using the discharge forming cutting method. Second, electrochemical anodic reaction technology is used to dissolve the discharge pits and recast layer on the single-crystal silicon surface. The machining mechanism of this process, the surface elements of the processed single-crystal silicon and a comparison of the kerf width are analyzed through experiments. On this basis, the influence of the movement speed of the copper foil electrode during electrochemical anodic dissolution on the final surface roughness is qualitatively analyzed. The experimental results show that discharge forming cutting-electrochemical machining can effectively eliminate the electrical discharge pits and recast layer, which are caused by electric discharge cutting, on the surface of single-crystal silicon, thereby reducing the surface roughness of the workpiece.

Surface roughness of single-crystal silicon etched by TMAH solution

2001 ◽  
Vol 90 (3) ◽  
pp. 223-231 ◽  
Author(s):  
Mitsuhiro Shikida ◽  
Takehiro Masuda ◽  
Daisuke Uchikawa ◽  
Kazuo Sato
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Tmah Solution
Sign in / Sign up

Export Citation Format

Share Document