Wear of single crystal silicon as a function of surface roughness

Wear ◽  
2003 ◽  
Vol 254 (9) ◽  
pp. 907-910 ◽  
Author(s):  
H.H Gatzen ◽  
M Beck
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Experimental Research on Discharge Forming Cutting-Electrochemical Machining of Single-Crystal Silicon

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
Bin Xin ◽  
Wei Liu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Electrical Discharge ◽  
Electrical Discharge Machining ◽  
Electrochemical Machining ◽  
Single Crystal Silicon ◽  
Recast Layer ◽  
Movement Speed ◽  
Crystal Silicon ◽  
Wedm Process

During the wire electrical discharge machining (WEDM) process, a large number of discharge pits and a recast layer are easily generated on the workpiece surface, resulting in high surface roughness. A discharge forming cutting-electrochemical machining method for fabricating single-crystal silicon is proposed in this study to solve this problem. On the same processing equipment, single-crystal silicon is first cut using the discharge forming cutting method. Second, electrochemical anodic reaction technology is used to dissolve the discharge pits and recast layer on the single-crystal silicon surface. The machining mechanism of this process, the surface elements of the processed single-crystal silicon and a comparison of the kerf width are analyzed through experiments. On this basis, the influence of the movement speed of the copper foil electrode during electrochemical anodic dissolution on the final surface roughness is qualitatively analyzed. The experimental results show that discharge forming cutting-electrochemical machining can effectively eliminate the electrical discharge pits and recast layer, which are caused by electric discharge cutting, on the surface of single-crystal silicon, thereby reducing the surface roughness of the workpiece.

Surface roughness of single-crystal silicon etched by TMAH solution

2001 ◽  
Vol 90 (3) ◽  
pp. 223-231 ◽  
Author(s):  
Mitsuhiro Shikida ◽  
Takehiro Masuda ◽  
Daisuke Uchikawa ◽  
Kazuo Sato
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Tmah Solution

Effect of Ice Counterparts on the Friction Behavior of Single Crystal Silicon Wafer

2008 ◽  
Vol 53-54 ◽  
pp. 167-172 ◽  
Author(s):  
Yu Li Sun ◽  
Dun Wen Zuo ◽  
Yong Wei Zhu ◽  
Ming Wang ◽  
H.Y. Wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Friction Coefficient ◽  
Single Crystal ◽  
Silicon Wafer ◽  
Single Crystal Silicon ◽  
Alkaline Condition ◽  
Friction Behavior ◽  
Crystal Silicon ◽  
Single Crystal Silicon Wafer ◽  
Α Al2o3

The friction behavior of single silicon wafer sliding against different ice counterparts (α-Al2O3, CeO2 and SiO2) at 10±0.5 °C within a velocity of 60 rpm~300 rpm were studied using a home-made friction and wear testing machine. The morphologies and surfaces roughness of the worn silicon wafers were observed and examined on a non-contact surface topography instrument (ADE). It was found that the friction coefficient of the single silicon wafer decreased with the increase of sliding velocity. Single crystal silicon wafer coupled with α-Al2O3 ice counterpart recorded the highest friction coefficient and the biggest surface roughness, while it had the lowest friction coefficient and the smallest surface roughness as with CeO2 ice counterpart. One reason was that a series of tribochemical reactions occurred at the local contact point between the ice counterpart and the silicon wafer during sliding. Under alkaline condition, there would be a soft corrosion layer formed on the surface of the silicon wafer. Another reason was that the hardness of the abrasive particles was different and this caused different cutting depth of them.

Study on Influence Laws of Surface Roughness of Micro-Groove in Single Crystal Silicon under Diamond Fly-Cutting

2015 ◽  
Vol 667 ◽  
pp. 142-148 ◽  
Author(s):  
Yan Yan Yan ◽  
Run Xing Wang ◽  
Bo Zhao
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Chip Thickness ◽  
Single Crystal Silicon ◽  
Spindle Speed ◽  
Cutting Depth ◽  
Crystal Silicon ◽  
Groove Surface ◽  
Undeformed Chip Thickness ◽  
Fly Cutting

Single crystal silicon has both important application value in the fields of micro-optics and MEMS, and it has been considered as one of the most difficult-to-cut materials because of its hardness and brittleness. Removal mechanism of the silicon was discussed, and the model of undeformed chip thickness was established in this article. According to the data of micro-groove surface roughness from the diamond fly-cutting experiment, the nonlinear relationship curve, between the largest undeformed chip thicknesshmaxand microgroove surface roughnessRa,were obtained using Gaussian-fitting principle, and the regression equation of the fitting curve was also got. Thus the prediction mathematical model of microgroove surface roughness was derived. The influence laws of the main working parameters on theRawere obtained based on the result of this experiment and the response surface of the prediction model, and some conclusions were summarized: the surface roughnessRaof microgroove in the single crystal silicon decreases with the decrease of the cutting depthap, the feed f and the increase of the spindle speednunder the diamond fly-cutting; the experimental results also showed that feedfaffects the value ofRavery much, cutting depthapless, and spindle speednthe least.

Friction and Wear of Polished Single Crystal Silicon at Different Area

2010 ◽  
Vol 142 ◽  
pp. 117-121
Author(s):  
Shou Xin Yu ◽  
D.W. Zou ◽  
X.L. Zhu ◽  
Yu Li Sun ◽  
L. Zhou
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Friction And Wear ◽  
Friction Mechanisms ◽  
Adhesive Wear ◽  
Single Crystal Silicon ◽  
Wear Properties ◽  
Crystal Silicon ◽  
Silicon Area ◽  
Friction And Wear Properties

A friction and wear experiment was carried out at different areas of single crystal silicon under same surface roughness. Friction mechanisms at different area were analyzed by STM and 3D profiler. The result showed that the friction and wear properties were obviously different at different area although they had same surface roughness. The friction and wear properties of the single crystal silicon where closest to inner-cycle internal were best while the farther from the inner-cycle silicon area or closer to crystal silicon cylindrical, the worse friction and wear properties were. Abrasive wear and adhesive wear were the primary wear mechanisms.

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