scholarly journals How To Visualize the Atomic-scale World of Interface Structure and Chemistry

1998 ◽  
Vol 101 (961) ◽  
pp. 894-896
Author(s):  
Sadahiro Tsurekawa
Keyword(s):  
Interface Structure ◽  
Atomic Scale

Atomic-scale analysis of the interface structure and lattice mismatch relaxation of Bi2Sr2CaCu2O8+δ/SrTiO3 heterostructure

2020 ◽  
Author(s):  
Jian Zhang ◽  
Weizhen Wang ◽  
Tianlin Wang ◽  
Lili Jiang ◽  
Nan Wang ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Interface Structure ◽  
Atomic Scale ◽  
Scale Analysis

scholarly journals Atomic‐Scale Interface Structure in Domain Matching Epitaxial BaBiO 3 Thin Films Grown on SrTiO 3 Substrates

2020 ◽  
Vol 14 (6) ◽  
pp. 2000054
Author(s):  
Lei Jin ◽  
Michael Zapf ◽  
Martin Stübinger ◽  
Martin Kamp ◽  
Michael Sing ◽  
...  
Keyword(s):  
Thin Films ◽  
Interface Structure ◽  
Atomic Scale

Anisotropy in Atomic-Scale Interface Structure and Mobility in Inas/Ga1_Xinxsb Superlattices

1996 ◽  
Vol 448 ◽  
Author(s):  
A. Y. Lew ◽  
S. L. Zuo ◽  
E. T. Yu ◽  
R. H. Miles
Keyword(s):  
Quantitative Analysis ◽  
Molecular Beam ◽  
Interface Structure ◽  
Interface Roughness ◽  
Atomic Scale ◽  
Constant Current ◽  
Scanning Tunneling ◽  
Interfacial Bond ◽  
Tunneling Microscopy ◽  
Cross Sectional

AbstractWe have used cross-sectional scanning tunneling microscopy to study the atomic-scale interface structure of InAs/Ga, _In.xSb superlattices grown by molecular-beam epitaxy. Detailed, quantitative analysis of interface profiles obtained from constant-current images of both (110) and (1ī0) cross-sectional planes of the superlattice indicates that interfaces in the (1ī0) plane exhibit a higher degree of interface roughness than those in the (110) plane, and that the Ga1-xln xAs interfaces are rougher than the InAs-on-Gal1-xInxSb interfaces. The roughness data are consistent with anisotropy in interface structure arising from anisotropic island formation during growth, and in addition with a growth-sequence-dependent interface asymmetry resulting from differences in interfacial bond structure between the superlattice layers. Roughness data are compared with measurements of anisotropy in low-temperature Hall mobilities of the samples.

Structure of a-Si:H/SnO2 Interface Characterized By Xps

1990 ◽  
Vol 192 ◽  
Author(s):  
H. Koinuma ◽  
M. Nakano ◽  
S. Gonda
Keyword(s):  
Glow Discharge ◽  
Bottom Layer ◽  
Interface Structure ◽  
Atomic Scale ◽  
Photoelectron Emission ◽  
In Situ Xps

ABSTRACTThe interface structure of a-Si:H films deposited by glow discharge decomposition of Si2H6 on SnO2 was characterized on an atomic scale with the use of in situ XPS. The method analyzes the variation of the intensity of photoelectron emission originating from the bottom SnO2 layer and transmitting through the upper a-Si:H layers of various thicknesses. It was evaluated that a-Si:H was partially oxidized as it grew to a thickness of about 15 A, while the SnO2 bottom layer was reduced to metallic Sn and SnOx (0 < x < 2) states as deep as 2 A and 12 A from the interface, respectively,

Microstructure of GaN Grown on (1120) Sapphire

2000 ◽  
Vol 639 ◽  
Author(s):  
P. Ruterana ◽  
A. E. Wickenden ◽  
M. E. Twigg ◽  
D.D. Koleske ◽  
R. L. Henry ◽  
...  
Keyword(s):  
Grain Size ◽  
Structural Analysis ◽  
Misfit Dislocation ◽  
Large Distance ◽  
Random Distribution ◽  
Interface Structure ◽  
Atomic Scale ◽  
Structural Defects ◽  
Work Done ◽  
Dislocation Spacing

ABSTRACTMost of the work done on GaN has taken into account layers grown on the (0001) sapphire. However one would expect the growth on (1120) to lead to different structural defects. As has been shown, in one direction, the mismatch is rather small. In this work, we have carried out structural analysis of layers and interfacial relationship. Inside the layers, the density of defects is comparable to that found conventionally in layers grown on top of (0001) sapphire. The growth mode is also mosaic with a grain size of a few microns. One interesting result is the interface structure, which differs from conventional growth where a flat or stepped interface is formed with a large distance between steps. In this case, the interface is found to be rough at the atomic scale so that this roughness has a random distribution. Moreover, the misfit dislocation spacing is 1nm which is only half the dislocation spacing found in GaN growth on (0001) sapphire.

Atomic scale interface structure in metallic superlattices

2007 ◽  
Vol 19 (13) ◽  
pp. 136201 ◽  
Author(s):  
V M Uzdin ◽  
W Keune
Keyword(s):  
Interface Structure ◽  
Atomic Scale

Atomic scale investigations of the Co/Pt(111) interface structure and magnetic properties

2001 ◽  
Vol 79 (4) ◽  
pp. 503-505 ◽  
Author(s):  
D. W. Moon ◽  
Y. H. Ha ◽  
Y. Park ◽  
J.-W. Lee ◽  
J. Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Interface Structure ◽  
Atomic Scale
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