323 Fatigue Characteristics of Thin Films

2001 ◽  
Vol 2001.9 (0) ◽  
pp. 339-340
Author(s):  
Akihiro NAKAMURA ◽  
Koichi AKITA ◽  
Hiroshi MISAWA
1998 ◽  
Vol 73 (6) ◽  
pp. 788-790 ◽  
Author(s):  
Z. G. Zhang ◽  
J. S. Liu ◽  
Y. N. Wang ◽  
J. S. Zhu ◽  
F. Yan ◽  
...  

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.


1998 ◽  
Vol 526 ◽  
Author(s):  
Kenji Ebihara ◽  
Hiromnitsu Kurogi ◽  
Yukihiko Yamagata ◽  
Tomoaki Ikegami ◽  
Alexander M. Grishin

AbstractThe perovskite oxide YBa2Cu3O7-x (YBCO) and Pb(ZrxTi1-x)O3 (PZT) thin films have been deposited for superconducting-ferroelectric devices. KrF excimer laser ablation technique was used at the deposition conditions of 200-600mTorr O2, 2-3J/cm2 and 5-10 Hz operation frequency. Heterostructures of PZT-YBCO-YAlO3:Nd show the zero resistivity critical temperature of 82K and excellent ferroelectric properties of remnant polarization 32 μC/cm2, coercive force of 80kV/cm and dielectric constant 800. Cycling fatigue characteristics and leakage current are also discussed.


2000 ◽  
Vol 005.1 (0) ◽  
pp. 73-74
Author(s):  
Koji OKANO ◽  
Tetsuya YAGI ◽  
Hitoshi TAKAGI ◽  
Hiroaki MISAWA ◽  
Shigeki MATSUO ◽  
...  

2008 ◽  
Vol 449 (1-2) ◽  
pp. 32-35 ◽  
Author(s):  
Donghyun Shim ◽  
Jaemoon Pak ◽  
Kuangwoo Nam ◽  
Gwangweo Park

2001 ◽  
Vol 79 (14) ◽  
pp. 2237-2239 ◽  
Author(s):  
Dong-Sheng Wang ◽  
Tao Yu ◽  
An Hu ◽  
Di Wu ◽  
Ai-Dong Li ◽  
...  

1997 ◽  
Vol 12 (2) ◽  
pp. 531-540 ◽  
Author(s):  
Keith G. Brooks ◽  
Radosveta D. Klissurska ◽  
Pedro Moeckli ◽  
N. Setter

Rhombohedral Pb(Zr0.70Ti0.30)O3 thin films of four different well-defined textures, namely, (100), (111), bimodal (110)/(111), and (100)/(111), were prepared by a sol-gel method. The films were characterized in terms of grain size, presence of second phases, surface roughness, columnarity of grains, and other microstructural features. The dielectric, ferroelectric, and fatigue properties were investigated, with emphasis on the hysteresis switching characteristics. Results are discussed from the reference point of the allowable spontaneous polarization directions available for the different textures. The values of coercive field, remanent and saturation polarization, and slope of the loop at the coercive field, at saturating fields can be qualitatively explained based on the texture, independent of microstructural differences. The occurrence of surface pyrochlore, however, is observed to affect the functionality of the saturation curves, particularly for the samples of bimodal texture. Shearing of the hysteresis curves of the bimodal films is also attributed to surface microstructural features. The occurrence of nonswitching 71° or 109° domains in the (111) and (110)/(111) textured films is hypothesized based on a comparison with the data from the (100) textured film. Corrected saturation polarization values agree with the spontaneous polarization values of rhombohedral PZT single crystals and published calculated values for rhombohedral PZT ceramics. The fatigue characteristics show increases in the switching component of polarization in the range 103−107 bipolar cycles, particularly for the (111) textured sample. Onset of fatigue is observed for all samples between 107 and 108 switching cycles.


1999 ◽  
Vol 596 ◽  
Author(s):  
Jang-Sik Lee ◽  
Eung-Chul Park ◽  
Jung-Ho Park ◽  
Byung-Il Lee ◽  
Seung-Ki Joo

AbstractThe effects of grain boundaries on the characteristics of the PZT thin films using single-grained PZT array by selective nucleation and growth method were investigated by locating the upper Pt electrode of 8 μm× 8 μm sized square directly on the single grains, 1 grain boundary and 4 grain boundaries in a controlled manner. It turned out that when there was no grain boundary, the best ferroelectric and electrical performance were obtained as expected. However, serious degradation was observed in polarization, leakage current, breakdown field and fatigue characteristics when grain boundary was contained in the area measured. This is the first qualitative investigation about the effects of the grain boundaries on the ferroelectric and electrical performance of the PZT thin films. It was found that degradation of the PZT thin films was accelerated with increasing the length of the grain boundaries within the top electrode and the main source of degradation in PZT thin films is grain boundary.


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