scholarly journals Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films

1997 ◽  
Vol 12 (2) ◽  
pp. 531-540 ◽  
Author(s):  
Keith G. Brooks ◽  
Radosveta D. Klissurska ◽  
Pedro Moeckli ◽  
N. Setter

Rhombohedral Pb(Zr0.70Ti0.30)O3 thin films of four different well-defined textures, namely, (100), (111), bimodal (110)/(111), and (100)/(111), were prepared by a sol-gel method. The films were characterized in terms of grain size, presence of second phases, surface roughness, columnarity of grains, and other microstructural features. The dielectric, ferroelectric, and fatigue properties were investigated, with emphasis on the hysteresis switching characteristics. Results are discussed from the reference point of the allowable spontaneous polarization directions available for the different textures. The values of coercive field, remanent and saturation polarization, and slope of the loop at the coercive field, at saturating fields can be qualitatively explained based on the texture, independent of microstructural differences. The occurrence of surface pyrochlore, however, is observed to affect the functionality of the saturation curves, particularly for the samples of bimodal texture. Shearing of the hysteresis curves of the bimodal films is also attributed to surface microstructural features. The occurrence of nonswitching 71° or 109° domains in the (111) and (110)/(111) textured films is hypothesized based on a comparison with the data from the (100) textured film. Corrected saturation polarization values agree with the spontaneous polarization values of rhombohedral PZT single crystals and published calculated values for rhombohedral PZT ceramics. The fatigue characteristics show increases in the switching component of polarization in the range 103−107 bipolar cycles, particularly for the (111) textured sample. Onset of fatigue is observed for all samples between 107 and 108 switching cycles.

2011 ◽  
Vol 415-417 ◽  
pp. 1855-1858
Author(s):  
Wen Cheng Tzou ◽  
Chien Chen Diao ◽  
Chao Chin Chan ◽  
Chia Ching Wu ◽  
Chang Fu Yang ◽  
...  

In this study, SrBi4Ti4O15 (SBT) thin films were deposited onto the SiO2/p-Si(100) and Pt/Ti/SiO2/p-Si(100) substrates by using sol-gel method. After deposition, the SBT thin films were then heated by a rapid thermal annealing (RTA) process conducted in air for 1min at 600-800°C. The surface morphologies and the crystalline structures of the SBT thin films were investigated by using SEM and XRD patterns. The grain sizes increased and the pores decreased with rising RTA temperature. In addition, the coercive field decreased and the remanent polarization and saturation polarization increased with rising RTA temperature. The lnJ-E1/2 curves of the SBT thin films were also investigated to find the leakage current mechanisms correspond either to the Schottky emission or to the Poole-Frenkel emission.


2016 ◽  
Vol 19 (2) ◽  
pp. 92-100
Author(s):  
Ngoc Kim Pham ◽  
Thang Bach Phan ◽  
Vinh Cao Tran

In this study, we have investigated influences of the thickness on the structure, surface morphology and resistive switching characteristics of CrOx thin films prepared by using DC reactive sputtering technique. The Raman and FTIR analysis revealed that multiphases including Cr2O3, CrO2, Cr8O21... phases coexist in the microstructure of CrOx film. It is noticed that the amount of stoichiometric Cr2O3 phase increased significantly as well as the surface morphology were more visible with less voids and more densed particles with larger thickness films. The Ag/CrOx/FTO devices exhibited bipolar resistive switching behavior and high reliability. The resistive switching ratio has decreased slightly with the thickness increments and was best achieved at CrOx – 100 nm devices.


2003 ◽  
Vol 43 (5) ◽  
pp. 903-908 ◽  
Author(s):  
Nam-Yeal Lee ◽  
Sung-Min Yoon ◽  
Woong-Chul Shin ◽  
Sang-Ouk Ryu ◽  
In-Kyu You ◽  
...  

2014 ◽  
Vol 703 ◽  
pp. 51-55
Author(s):  
Jia Zeng ◽  
Ming Hua Tang ◽  
Zhen Hua Tang ◽  
Yong Guang Xiao ◽  
Long Peng ◽  
...  

Bi0.94Ce0.06Fe0.97Ti0.03O3 and Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films were fabricated via sol-gel process on Pt/Ti/SiO2/Si substrates. The influence of Bi3.15Nd0.85Ti3O12 buffer layer on microstructure and electrical properties of Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films were investigated in detail. Well-saturated P-E hysteresis loops can be obtained in Bi0.94Ce0.06Fe0.97Ti0.03O3 films with Bi3.15Nd0.85Ti3O12 buffer. The remnant polarization (2Pr) of the double-layered thin films is 112 μC/cm2. The coercive field (2Ec) of double-layered films is 672 kV/cm, which is much lower than that of the Bi0.94Ce0.06Fe0.97Ti0.03O3 thin films. The leakage current density of Bi0.94Ce0.06Fe0.97Ti0.03O3/Bi3.15Nd0.85Ti3O12 double-layered thin films is 4.12×10-5 A/cm2.


2008 ◽  
Vol 449 (1-2) ◽  
pp. 32-35 ◽  
Author(s):  
Donghyun Shim ◽  
Jaemoon Pak ◽  
Kuangwoo Nam ◽  
Gwangweo Park

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.


2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Tingting Zhong ◽  
Yongfu Qin ◽  
Fengzhen Lv ◽  
Haijun Qin ◽  
Xuedong Tian

Abstract High-density Cs2AgBiBr6 films with uniform grains were prepared by a simple one-step and low-temperature sol–gel method on indium tin oxide (ITO) substrates. An explicit tristate bipolar resistance switching behavior was observed in the Pt/Cs2 AgBiBr6/ITO/glass devices under irradiation of 10 mW/cm2 (445 nm). This behavior was stable over 1200 s. The maximum ratio of the high and low resistance states was about 500. Based on the analysis of electric properties, valence variation and absorption spectra, the resistive switching characteristics were attributed to the trap-controlled space charge-limited current mechanism due to the bromine vacancies in the Cs2AgBiBr6 layer. On the other hand, it is suggested that the ordering of the Schottky-like barrier located at Pt/Cs2AgBiBr6 affects the three-state resistance switching behavior under light irradiation. The ability to adjust the photoelectrical properties of Cs2AgBiBr6-based resistive switching memory devices is a promising strategy to develop high-density memory. Graphical Abstract


2015 ◽  
Vol 815 ◽  
pp. 171-175
Author(s):  
Hong Cheng Liu ◽  
Wei Jun Zhang ◽  
Xiao Chen Zhang ◽  
Qian Yu ◽  
Jue Wang

s. Yttium-substituted bismuth titanate (Bi4-xYxTi3O12, BYT) thin films were deposited on the (111)Pt/Ti/SiO2(100) substrates by a modified Sol-Gel process and studied in this work in terms ofY3+-modified microstructure and phase development as well as ferroelectric properties. With the aid of the fist-principle, the position of Y3+substitution for Bi3+on the microstructure of BYT was studied.The phase change in the formation of BYT crystalline and the effect of Y3+substitution for Bi3+on the microstructure of BYT was studiedbyXRD. The results showed that the optimal properties of the obtained BYT ferroelectric thin films werex:0.6. The ferroelectric properties of the films were also investigated. When the Y-substituted contentxwas equal to 0.6, the remnant polarization was the largest. The remnant polarization 2Prvalue was equal to 16.02μC/cm2and the coercive fieldEcvalue was 88 kV/cm.


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