Enhanced fatigue characteristics of sol–gel derived PZT thin films

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

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Low temperature preparation of sol-gel PZT thin films for pyroelectric and other integrated devices

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics ◽

10.1109/isaf.1996.602739 ◽

2002 ◽

Author(s):

J.C. Gunter ◽

S.K. Streiffer ◽

A.I. Kingon

Keyword(s):

Thin Films ◽

Low Temperature ◽

Sol Gel ◽

Pzt Thin Films ◽

Integrated Devices ◽

Low Temperature Preparation ◽

Temperature Preparation

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The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

MRS Proceedings ◽

10.1557/proc-493-131 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 8

Author(s):

Seung-Hyun Kim ◽

J. G. Hong ◽

J. C. Gunter ◽

H. Y. Lee ◽

S. K. Streiffer ◽

...

Keyword(s):

Thin Films ◽

Leakage Current ◽

Bottom Electrode ◽

Ferroelectric Properties ◽

Sol Gel ◽

Chemical Solution ◽

Electrode Structure ◽

Solution Deposition ◽

Pzt Thin Films ◽

Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

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Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces

Chemistry of Materials ◽

10.1021/cm070999q ◽

2008 ◽

Vol 20 (1) ◽

pp. 303-307 ◽

Cited By ~ 19

Author(s):

Mark D. Losego ◽

Jon F. Ihlefeld ◽

Jon-Paul Maria

Keyword(s):

Thin Films ◽

Sol Gel ◽

Solution Chemistry ◽

Pzt Thin Films ◽

Copper Surfaces

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Nanostructure Analysis of Sol-gel PZT Thin Films Derived from Different Chemical Routes

Microscopy and Microanalysis ◽

10.1017/s1431927609990729 ◽

2009 ◽

Vol 15 (S3) ◽

pp. 53-54

Author(s):

Aiying Wu ◽

P. M. Vilarinho

Keyword(s):

Thin Films ◽

Data Storage ◽

Chemical Reactivity ◽

Sol Gel ◽

Random Access ◽

Lead Zirconate ◽

Piezoelectric Response ◽

Metal Alkoxides ◽

Pzt Thin Films ◽

Wide Range

AbstractLead zirconate - lead titanate (PZT) materials are commercially important piezoelectric and ferroelectrics in a wide range of applications, such as data storage (dynamic access and ferroelectric random access memories) and sensing and actuating devices. PZT with the morphotropic phase boundary composition offers the highest piezoelectric response and at the present there are no fullydeveloped alternative materials to PZT. The importance of PZT associated with the continuous requirements of device miniaturization, imposes the development of high quality PZT thin films with optimized properties. Concomitantly due to the dependence of the final properties of thin films on the details of the microstructure a thoroughly analysis at the local scale of their microstructure is necessary. Sol-gel method, is one of the Chemical Solution Deposition techniques used to prepare oxide thin films, such as PZT. Starting from a solution, a solid network is progressively formed via inorganic polymerisation reactions. Most metal alkoxides used for sol-gel synthesis are highly reactive towards hydrolysis and condensation. Therefore their chemical reactivity has to be tailored via the chemical modification (or complexation) of metal alkoxides to avoid uncontrolled reactions and precipitation. For PZT sol gel thin film preparation, two chemical routes are frequently used depending on the nature of the molecular precursor, namely methotoxyethanol (MOE) route and diol-route.

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A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.650 ◽

2010 ◽

Vol 663-665 ◽

pp. 650-653

Author(s):

Jin Moo Byun ◽

Jeong Sun Han ◽

Jae Hyoung Park ◽

Seong Eui Lee ◽

Hee Chul Lee

Keyword(s):

Thin Films ◽

Piezoelectric Coefficient ◽

Energy Harvester ◽

Sol Gel ◽

Pure Perovskite Structure ◽

Pzt Thin Films ◽

Gel Method ◽

Sol Gel Method ◽

Si Substrates ◽

Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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