scholarly journals Effects of Vickers indented load and microstructure of bending strength and fracture toughness in normal-sintered silicon carbide.

1990 ◽  
Vol 56 (523) ◽  
pp. 488-493 ◽  
Author(s):  
Yasuo OCHI ◽  
Akira ISHII ◽  
Shigemi K SASAKI ◽  
Sunao KURAKAZU ◽  
Makoto KAWAI
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Bending Strength ◽  
Sintered Silicon

scholarly journals Evaluations of bending strength and fracture toughness by indentation method in silicon carbide ceramics.

1990 ◽  
Vol 39 (442) ◽  
pp. 895-900
Author(s):  
Shigemi K. SASAKI ◽  
Yasuo OCHI ◽  
Akira ISHII ◽  
Makoto KAWAI ◽  
Sunao KURAKAZU
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Bending Strength ◽  
Indentation Method ◽  
Carbide Ceramics ◽  
Silicon Carbide Ceramics

SILICON CARBIDE SC-221

Alloy Digest ◽  
1991 ◽  
Vol 40 (7) ◽  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
High Temperature ◽  
Mechanical Strength ◽  
Physical Properties ◽  
Bending Strength ◽  
Beta Phase ◽  
Pressureless Sintering ◽  
Bend Strength ◽  
Sintering Method

Abstract SILICON CARBIDE SC-221 is a beta-phase silicon carbide made from the pressureless sintering method. It possesses excellent mechanical strength at high temperature (4-point bending strength of 71ksi [490 MPa] at 1400 C [2552 F]). This datasheet provides information on physical properties, hardness, elasticity, and bend strength as well as fracture toughness. Filing Code: Cer-5. Producer or source: Kyocera America Inc..

CRACK-HEALING BEHAVIOR AND BENDING STRENGTH PROPERTIES OF SiC CERAMICS BASED ON THE TYPE OF ADDITIVE SiO2 EMPLOYED

2010 ◽  
Vol 24 (15n16) ◽  
pp. 2869-2874 ◽  
Author(s):  
KI WOO NAM ◽  
JONG SOON KIM ◽  
SEUNG WON PARK
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Surface Crack ◽  
Bending Strength ◽  
Crack Size ◽  
Strength Properties ◽  
Crack Healing ◽  
Sic Ceramics ◽  
Maximum Crack ◽  
Atmospheric Level

Silicon carbide ( SiC ) exhibits good strength at high temperatures and resistance to radioactivity. However, it has poor fracture toughness. The ability to heal cracks represents a very desirable means of overcoming this weakness. This study focuses on the crack-healing behavior and bending strength of SiC ceramics to which sintering additives have been added. Optimized crack-healing condition was found to be 1hr at an atmospheric level of 1100 °C. The maximum crack size that can be healed at the optimized condition was a semi-elliptical surface crack of 450 µm in diameter. Si oxide was revealed to be the principle material involved in crack-healing.

Importance of chemistry in high-tech ceramics design

2002 ◽  
Vol 74 (11) ◽  
pp. 2137-2144 ◽  
Author(s):  
P. Šajgalík
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Silicon Nitride ◽  
Liquid Phase ◽  
Grain Boundary ◽  
Ceramic Materials ◽  
High Tech ◽  
Polycrystalline Ceramics ◽  
Sintered Silicon

This paper deals with the role of chemistry in the design of high-tech ceramic materials. Grain boundary composition of polycrystalline ceramics dictates the hardness fracture toughness and creep resistance of liquid-phase sintered silicon nitride and silicon carbide materials.

Strengthening Mechanism of High-Strength Reaction-Sintered Silicon Carbide

2011 ◽  
Vol 484 ◽  
pp. 89-97 ◽  
Author(s):  
Shoko Suyama ◽  
Yoshiyasu Itoh
Keyword(s):  
Silicon Carbide ◽  
Bending Strength ◽  
Stress Measurement ◽  
High Strength ◽  
Strengthening Mechanism ◽  
Fracture Model ◽  
Good Shape ◽  
Transmission Electron ◽  
Sintering Shrinkage ◽  
Sintered Silicon

A newly developed high-strength reaction-sintered silicon carbide (SiC), which has two or three times higher strength than conventional sintered SiC, is one of the most promising candidates for lightweight substrates of optical mirrors, because of its fully dense structure, small sintering shrinkage ( < 0.5 %), good shape capability, and low sintering temperature. In this paper, in order to improve the performance of the newly developed reaction-sintered SiC, the effect of the microstructure on the bending strength was investigated by focusing on a physical fracture model using observations from transmission electron microscopy and X-ray stress measurement. As a result, it was confirmed that the bending strength of the newly developed reaction-sintered SiC could be improved by reducing the size of residual silicon. The strengthening mechanism of the newly developed reaction-sintered SiC was assumed to be due to piled-up dislocations at the grain-boundary of residual silicon sites, based on Stroh’s fracture model of polycrystalline solids.

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