Precision CO2 laser processing of optical fibres for rapid contamination free device fabrication

2016 ◽  
Author(s):  
Keiron Boyd ◽  
Simon Rees ◽  
Nikita Simakov ◽  
Jae M. O. Daniel ◽  
Robert Swain ◽  
...  
Keyword(s):  
Co2 Laser ◽  
Laser Processing ◽  
Device Fabrication ◽  
Optical Fibres

Heat transfer modelling in CO2 laser processing of optical fibres

1998 ◽  
Vol 152 (4-6) ◽  
pp. 324-328 ◽  
Author(s):  
A.J.C. Grellier ◽  
N.K. Zayer ◽  
C.N. Pannell
Keyword(s):  
Heat Transfer ◽  
Co2 Laser ◽  
Laser Processing ◽  
Optical Fibres ◽  
Transfer Modelling

Development of adaptive mirror (AM) and its application to CO2 laser processing

2000 ◽  
Author(s):  
T. Okada ◽  
K. Ebata ◽  
M. Shiozaki ◽  
T. Kyotani ◽  
A. Tsuboi ◽  
...  
Keyword(s):  
Co2 Laser ◽  
Laser Processing ◽  
Adaptive Mirror

Characterization of Thermal Oxides of Laser Annealed Polysilicon

1981 ◽  
Vol 4 ◽  
Author(s):  
Rajiv R. Shah ◽  
Robert Mays ◽  
D. Lloyd Crosthwait
Keyword(s):  
Laser Processing ◽  
Single Crystal Silicon ◽  
Electrical Characterization ◽  
Device Fabrication ◽  
Breakdown Field ◽  
Guard Ring ◽  
Crystal Silicon ◽  
Process Sequence ◽  
Thermal Oxide

ABSTRACTWe report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.

Study of a CdTe high-energy radiation imaging device fabrication by excimer laser processing

2004 ◽  
Vol 1 (4) ◽  
pp. 1050-1053 ◽  
Author(s):  
Toru Aoki ◽  
Volodymyr A. Gnatyuk ◽  
Atsushi Nakamura ◽  
Yasuhiro Tomita ◽  
Yoshinori Hatanaka ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
High Energy ◽  
Device Fabrication ◽  
Imaging Device ◽  
High Energy Radiation ◽  
Energy Radiation ◽  
Radiation Imaging

UV Laser Processing of Semiconductor Devices

1986 ◽  
Vol 75 ◽  
Author(s):  
T. W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Silicon Surface ◽  
Device Fabrication ◽  
Electrical Characteristics ◽  
Uv Laser ◽  
High Concentration ◽  
Doping Profiles ◽  
Clean Silicon Surface

AbstractThe use of a pulsed UV excimer laser based process for the incorporation of dopant impurities into Si is described. The process can result in high concentration shallow box like profiles suitable for submicron VLSI device fabrication. The process consists of exposure of the clean silicon surface to a doping gas (B2H6, AsH3, PH3) then driving the adsorbed monolayers of dopant into the Si by a melt-regrowth process initiated by a pulsed XeCl excimer laser. Modeling of the process allows prediction of the resulting doping profiles and electrical properties of the doped layers. Excellent crystal quality of the doped layers is found even without a postdoping anneal. Also, recent results indicate that post doping annealing may not be needed for improvement of the electrical characteristics of the doped layers provided certain conditions are met. Detailed descriptions of the process, results, modeling and device fabrication are presented.

Laser Processing of Thermal Sprayed Coatings for Thermoelectric Generators

2013 ◽  
Author(s):  
Mahder Tewolde ◽  
Di Liu ◽  
David J. Hwang ◽  
Jon P. Longtin
Keyword(s):  
Thermal Spray ◽  
Process Parameters ◽  
Laser Processing ◽  
Short Pulse ◽  
Low Cost ◽  
Laser Wavelength ◽  
Device Fabrication ◽  
Electrical Isolation ◽  
Adjacent Structures ◽  
Study Results

Recent research has shown that thermal spray has the potential to fabricate thermoelectric devices at low cost and high volumes. An integral aspect of the device fabrication is laser processing of the various thermal sprayed layers, which is used to form electrically isolated regions and minimize heat loss to adjacent structures. In this article, experimental results are presented for the laser patterning of thermal spray samples ranging from 50μm to 2mm in thickness. The optimization of process parameters is important for successful electrical isolation and high-quality features. In this study results are presented several short-pulse lasers (nanosecond and picosecond) in which laser power, laser wavelength, type of focusing lens, processing speed, repetition rate, and pressure and flow of purge gas were varied. The optimum laser parameters were those that minimize the heat affected zone and delamination due to thermal damage while providing maximum material removal. The resulting laser patterns were characterized using both optical and scanning electron (SEM) microscopy, and by verifying electrical isolation between patterned regions using contact resistance measurements. Cut quality attributes including kerf width and edge profile were also studied, and their dependence on process parameters reported.

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