Reducing and eliminating induced losses during UV-laser processing of photo-hypersensitised optical fibres

2004 ◽  
Vol 41 (1) ◽  
pp. 105-111 ◽  
Author(s):  
J. Canning ◽  
P.-F. Hu
Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 372 ◽  
Author(s):  
Samuel Ligon ◽  
Gurdial Blugan ◽  
Jakob Kuebler

Freestanding SiCNO ceramic pieces with sub-mm features were produced by laser crosslinking of carbosilane and silazane polymer precursors followed by pyrolysis in inert atmosphere. Three different pulsed UV laser systems were investigated, and the influence of laser wavelength, operating power and scanning speed were all found to be important. Different photoinitiators were tested for the two lasers operating at 355 nm, while for the 266 nm laser, crosslinking occurred also without photoinitiator. Pre-treatment of glass substrates with fluorinated silanes was found to ease the release of green bodies during solvent development. Polymer crosslinking was observed with all three of the laser systems, as were bubbles, surface charring and in some cases ablation. By focusing the laser beam several millimeters above the surface of the resin, selective polymer crosslinking was observed exclusively.


Author(s):  
Keiron Boyd ◽  
Simon Rees ◽  
Nikita Simakov ◽  
Jae M. O. Daniel ◽  
Robert Swain ◽  
...  

1986 ◽  
Vol 75 ◽  
Author(s):  
T. W. Sigmon

AbstractThe use of a pulsed UV excimer laser based process for the incorporation of dopant impurities into Si is described. The process can result in high concentration shallow box like profiles suitable for submicron VLSI device fabrication. The process consists of exposure of the clean silicon surface to a doping gas (B2H6, AsH3, PH3) then driving the adsorbed monolayers of dopant into the Si by a melt-regrowth process initiated by a pulsed XeCl excimer laser. Modeling of the process allows prediction of the resulting doping profiles and electrical properties of the doped layers. Excellent crystal quality of the doped layers is found even without a postdoping anneal. Also, recent results indicate that post doping annealing may not be needed for improvement of the electrical characteristics of the doped layers provided certain conditions are met. Detailed descriptions of the process, results, modeling and device fabrication are presented.


2002 ◽  
Vol 20 (1) ◽  
pp. 1-21 ◽  
Author(s):  
E. Andreou ◽  
A. Athanassiou ◽  
D. Fragouli ◽  
D. Anglos ◽  
S. Georgiou

Chemical modifications are expected to be the major type of side-effect in the UV laser processing of molecular substrates. For their systematic characterization, studies on polymeric systems consisting of poly(methyl methacrylate) and polystyrene films doped with aromatic dopants exemplifying different degrees of photoreactivity are undertaken. In particular, the dependence of the nature and extent of the modifications on chromophore properties and laser parameters (laser fluence, wavelength, and number of pulses) is examined. The substrate absorptivity and the number of employed laser pulses turn out to be the critical parameters in determining the quantity and nature of photoproducts that remain in the substrate. The implications of these results for the optimisation of laser processing of molecular/organic solids are discussed. It is suggested that the importance of employing relatively strongly absorbed wavelengths in laser processing may relate, besides the efficient etching and good surface morphology, to the minimization of the chemical modifications. In contrast, irradiation with successive laser pulses is indicated to be highly disadvantageous for the chemical integrity of the substrate. In all, the study of such model systems appears to be most appropriate for establishing criteria for the systematic optimisation of laser processing techniques of molecular substrates.


2019 ◽  
Vol 41 (7) ◽  
pp. 315-330
Author(s):  
Stefano Chiussi ◽  
Francisco Gontad ◽  
Stefan Stefanov ◽  
Jorge Carlos Conde ◽  
Estefanía López ◽  
...  

1994 ◽  
Vol 65 (13) ◽  
pp. 1709-1711 ◽  
Author(s):  
K.‐Josef Kramer ◽  
Somit Talwar ◽  
Thomas W. Sigmon ◽  
Kurt H. Weiner
Keyword(s):  

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