Characterization of Thermal Oxides of Laser Annealed Polysilicon
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ABSTRACTWe report an investigation of the effects of laser processing on the thermal oxides of polysilicon. LPCVD polysilicon, 500 nm thick, deposited on 500 nm thermal oxide of single crystal silicon was laser processed at various stages in the process sequence for device fabrication. Effects of CW Ar+ and pulsed 1.06 and 0.53 μm laser processing were investigated. Laser annealed polysilicon was oxidized in a steam ambient. Using a second level of polysilicon, guard ring diode and capacitors were fabricated. Electrical characterization revealed an improvement in breakdown field strengths of these oxides without deleterious effects on any of the associated interfaces.
1985 ◽
Vol 43
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pp. 300-301
1990 ◽
Vol 48
(4)
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pp. 650-651
2021 ◽
2018 ◽
Vol 82
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pp. 54-61
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1998 ◽
Vol 64
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pp. 87-93
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