Silicon dioxide and hafnium dioxide evaporation characteristics from a high-frequency sweep e-beam system

1996 ◽  
Vol 35 (25) ◽  
pp. 5095 ◽  
Author(s):  
Robert Chow ◽  
Nick Tsujimoto
Keyword(s):  
Silicon Dioxide ◽  
High Frequency ◽  
Hafnium Dioxide ◽  
Frequency Sweep ◽  
Beam System

scholarly journals Comprehensive Analytical Modelling of an Absolute pH Sensor

Sensors ◽  
2021 ◽  
Vol 21 (15) ◽  
pp. 5190
Author(s):  
Cristina Medina-Bailon ◽  
Naveen Kumar ◽  
Rakshita Pritam Singh Dhar ◽  
Ilina Todorova ◽  
Damien Lenoble ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Numerical Experiments ◽  
Ph Sensor ◽  
Hafnium Dioxide ◽  
Matlab Code ◽  
Oxide Degradation ◽  
Depletion Width ◽  
Ion Activity ◽  
The Absolute ◽  
The Impact

In this work, we present a comprehensive analytical model and results for an absolute pH sensor. Our work aims to address critical scientific issues such as: (1) the impact of the oxide degradation (sensing interface deterioration) on the sensor’s performance and (2) how to achieve a measurement of the absolute ion activity. The methods described here are based on analytical equations which we have derived and implemented in MATLAB code to execute the numerical experiments. The main results of our work show that the depletion width of the sensors is strongly influenced by the pH and the variations of the same depletion width as a function of the pH is significantly smaller for hafnium dioxide in comparison to silicon dioxide. We propose a method to determine the absolute pH using a dual capacitance system, which can be mapped to unequivocally determine the acidity. We compare the impact of degradation in two materials: SiO2 and HfO2, and we illustrate the acidity determination with the functioning of a dual device with SiO2.

A High-Frequency Sweep Circuit

1935 ◽  
Vol 23 (6) ◽  
pp. 653-657
Author(s):  
T.T. Goldsmith ◽  
L.A. Richards
Keyword(s):  
High Frequency ◽  
Frequency Sweep

scholarly journals Backscatter calibration of high-frequency multibeam echosounder using a reference single-beam system, on natural seafloor

2018 ◽  
Vol 39 (1-2) ◽  
pp. 55-73 ◽  
Author(s):  
Dimitrios Eleftherakis ◽  
Laurent Berger ◽  
Naig Le Bouffant ◽  
Anne Pacault ◽  
Jean-Marie Augustin ◽  
...  
Keyword(s):  
High Frequency ◽  
Multibeam Echosounder ◽  
Single Beam ◽  
Beam System

A new high-frequency audiometer

1984 ◽  
Vol 98 (S9) ◽  
pp. 101-105 ◽  
Author(s):  
Juergen Tonndorf ◽  
Barbara Kurman
Keyword(s):  
High Frequency ◽  
Frequency Sweep ◽  
Number Of Patients ◽  
Continuous Frequency

Tinnitus (TI) is held to be a symptom that is usually associated with hearing losses of various origin (Chaba, 1982). This notion was, at least partially, supported by Berlin. In a number of patients with Tl, who did not show hearing losses on discretefrequency audiometry, he demonstrated small circumscribed losses at between frequencies by means of Békésy audiometer with a continuous-frequency sweep. Berlin then proposed that in some other patients, in whom hearing losses are not evident, these may be located in the highfrequency region, beyond the reach of conventional audiometry, i.e., beyond 8 kHz.

scholarly journals Method for Metallization Stripping of Gold Interconnected Semiconductors Using an Aqueous Potassium Iodide Solution

2002 ◽  
Vol 10 (5) ◽  
pp. 18-19 ◽  
Author(s):  
Peter Tomic
Keyword(s):  
Silicon Dioxide ◽  
Potassium Iodide ◽  
High Frequency ◽  
Fiber Optic ◽  
Potassium Iodide Solution ◽  
Gold Films ◽  
Active Structures ◽  
Microelectronic Devices ◽  
Cellular Telephony ◽  
Iodide Solution

Thin films in microcircuits can vary from as little a few hundred angstroms, in the case of dielectrics such as silicon nitride and silicon dioxide, to several microns in the case of interconnects. However, most metallization systems used as interconnects and in active structures are generally in the order of 0.5 μm to 4 μm. Gold has a number of desirable properties such as high electrical conductivity, the ability to be easily electroplated, low residual stress after deposition, corrosion resistance etc., Gold is commonly found in microelectronic devices, particularly in high frequency applications like cellular telephony, fiber-optic amplifiers and other high frequency analog applications. An aqueous potassium iodide solution offers a fast and relatively safe method for the removal of thin gold films.

scholarly journals Development of High Frequency Acoustic Split-beam System for Zoo Plankton Measurement

2005 ◽  
Vol 32 (4) ◽  
pp. 247-253
Author(s):  
Masaki OGATA ◽  
Masahiko FURUSAWA ◽  
Bo-Kyu HWANG
Keyword(s):  
High Frequency ◽  
Beam System

Dynamic analysis of a piezoelectric augmented beam system with adhesive bonding layer effects

2016 ◽  
Vol 28 (2) ◽  
pp. 178-194 ◽  
Author(s):  
Mohammad I. Albakri ◽  
Pablo A. Tarazaga
Keyword(s):  
Dynamic Response ◽  
High Frequency ◽  
Adhesive Bonding ◽  
Spectral Element ◽  
Bonding Layer ◽  
Inertia Effects ◽  
Electromechanical Impedance ◽  
Beam System ◽  
Host Structure ◽  
Piezoelectric Wafers

Embedded and surface bonded piezoelectric wafers have been widely used for control and monitoring purposes. Several nondestructive evaluation and structural health monitoring techniques, such as electromechanical impedance and wave propagation–based techniques, utilize piezoelectric wafers in either active or passive manner to interrogate the host structure. The basis of all these techniques is the energy transfer between the piezoelectric wafer and the host structure which takes place through an adhesive bonding layer. In this article, the high-frequency dynamic response of a coupled piezoelectric-beam system is modeled including the adhesive bonding layer in between. A new three-layer spectral element is developed for this purpose. The formulation of this new element takes into account axial and shear deformations, in addition to rotary inertia effects in all three layers. The capabilities of the proposed model are demonstrated through several numerical examples, where the effects of bonding layer geometric and material characteristics on dispersion relations and damage detection capabilities are discussed. The results highlight the importance of accounting for the adhesive bonding layer in piezoelectric-structure interaction models, especially when the high-frequency dynamic response is of interest.

Validation of potentials and limitations of a high-frequency eddy current system in frequency sweep mode

2012 ◽  
Author(s):  
Susanne Hillmann ◽  
Henning Heuer ◽  
Juan G. Calzada ◽  
Adam T. Cooney ◽  
Bryan C. Foos ◽  
...  
Keyword(s):  
Eddy Current ◽  
High Frequency ◽  
Current System ◽  
Frequency Sweep

Ultrathin Gate Oxides with Shallow Nitrogen Implants as Effective Barriers to Boron Diffusion

1999 ◽  
Vol 567 ◽  
Author(s):  
Yoshi Ono ◽  
Yanjun Ma ◽  
Sheng-Teng Hsu
Keyword(s):  
Silicon Dioxide ◽  
High Frequency ◽  
Inductively Coupled Plasma ◽  
Gate Oxide ◽  
Boron Diffusion ◽  
Gate Oxides ◽  
Inductively Coupled ◽  
Capacitance Voltage ◽  
Nitrogen Ions ◽  
Plasma Immersion Ion Implantation

ABSTRACTPlasma immersion ion implantation (PIII) has been employed to controllably place nitrogen ions from an inductively coupled plasma into a thin furnace grown gate oxide 2.0nm thick with implant voltages from 25 to 500V. Control of the implant energy enables shallow implantation confining the nitrogen mainly within the oxide. Rapid thermal annealing is essential in repairing any damage to the implanted silicon dioxide and silicon while consolidating the bonding of nitrogen into the oxide film prior to gate polysilicon deposition. High frequency capacitance-voltage measurements of capacitors made with BF2+ implanted gates throughout a series of furnace anneals demonstrates the efficiency for blocking boron compared to non-nitrided oxides of similar thickness. Tddb measurements verify excellent reliability compared to a non-implanted oxide for both stress polarities.

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