Electrochemical threshold conditions during electro-optical switching of ionic electrophoretic optical devices

2009 ◽  
Vol 48 (6) ◽  
pp. 1062
Author(s):  
Richard T. F. Wong ◽  
Peter C. P. Hrudey ◽  
Lorne A. Whitehead
Keyword(s):  
Optical Switching ◽  
Optical Devices ◽  
Threshold Conditions

scholarly journals A Novel Hybrid Data Center Architecture Employing Optically-Switched WDM LANs over Electrical Fat Trees

2021 ◽  
Author(s):  
Tapasmini Sahoo ◽  
Bibhu Prasad Mohanty
Keyword(s):  
Power Consumption ◽  
Data Center ◽  
Optical Switching ◽  
Optical Devices ◽  
The Other ◽  
Hybrid Architecture ◽  
Traffic Condition ◽  
End To End Delay ◽  
Hybrid Data ◽  
End To End

Abstract Inter connection network in a data center is the need of the hour as the communication backbone which caters the demands to accommodate a large number of servers with minimum possible end-to-end delay. The traditional Fat tree based topologies play a pivotal role for data center network (DCN) albeit in a low scale, on the other hand the upcoming electrical-cum-optical hybrid architecture demands huge power consumption and exhibit significant end-to-end delay. The present work depicts a proposal of highly scalable novel hybrid architecture employing optically switched WDM LANs (based on ShuffleNet topology) over electrical Fat trees with the use of substantial number of optical devices, the proposed DCN architecture is shown to offer reasonable reduction of end-to-end delay to 12.29µs for mouse traffic and 10.01ms for elephant traffic as compared to Optical Switching Architecture (OSA), which has significant 23ms of delay for any traffic condition.

AlGaAs BELOW HALF BANDGAP: THE SILICON OF NONLINEAR OPTICAL MATERIALS

1994 ◽  
Vol 03 (03) ◽  
pp. 347-371 ◽  
Author(s):  
G.I. STEGEMAN ◽  
A. VILLENEUVE ◽  
J. KANG ◽  
J.S. AITCHISON ◽  
C.N. IRONSIDE ◽  
...  
Keyword(s):  
High Throughput ◽  
Optical Materials ◽  
Optical Switching ◽  
Nonlinear Optical ◽  
Optical Devices ◽  
Nonlinear Optical Materials ◽  
Figures Of Merit ◽  
All Optical ◽  
Device Applications ◽  
All Optical Switching

Very few nonlinear optical materials are actually useful for high throughput all-optical devices. However, AlGaAs does satisfy all of the nonlinear optical figures of merit when used with photons of energy less than one half the semiconductor bandgap. Here we review our measurements of the pertinent nonlinear coefficients in waveguides and various device applications to all-optical switching in the communications band around 1550 nm.

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

Nanostructure of semiconductor quantum dots in a borosilicate glass matrix by complementary use of HREM and AEM

1990 ◽  
Vol 48 (4) ◽  
pp. 728-729
Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter
Keyword(s):  
Quantum Dots ◽  
Borosilicate Glass ◽  
Glass Matrix ◽  
Optical Switching ◽  
Response Times ◽  
Fast Response ◽  
Processing Technique ◽  
Internal Stresses ◽  
Electron Hole ◽  
Spatial Dimensions

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.

Neutron Reflection, Refraction and Detection ; New Trend of Development of Neutron Optical Devices and Detector

2005 ◽  
Vol 47 (3) ◽  
pp. 172-177
Author(s):  
Yoshiaki. KIYANAGI ◽  
Kazuhiko SOYAMA ◽  
Hirohiko SHIMIZU ◽  
Seiji TASAKI ◽  
Hiroyuki TAKAHASHI
Keyword(s):  
Optical Devices ◽  
Neutron Reflection ◽  
Trend Of Development

On Number of Planes of Rearrangeably Nonblocking Optical Banyan Networks with Link Failures

2008 ◽  
Vol 1 (1) ◽  
pp. 43-54
Author(s):  
Basra Sultana ◽  
Mamun-ur-Rashid Khandker
Keyword(s):  
Optical Switching ◽  
Blocking Probability ◽  
Link Failure ◽  
Link Failures ◽  
Small Depth ◽  
Internal Link ◽  
Banyan Network ◽  
Minimum Number ◽  
Switch Design ◽  
Banyan Networks

Vertically stacked optical banyan (VSOB) networks are attractive for serving as optical switching systems due to the desirable properties (such as the small depth and self-routing capability) of banyan network structures. Although banyan-type networks result in severe blocking and crosstalk, both these problems can be minimized by using sufficient number of banyan planes in the VSOB network structure. The number of banyan planes is minimum for rearrangeably nonblocking and maximum for strictly nonblocking structure. Both results are available for VSOB networks when there exist no internal link-failures. Since the issue of link-failure is unavoidable, we intend to find the minimum number of planes required to make a VSOB network nonblocking when some links are broken or failed in the structure. This paper presents the approximate number of planes required to make a VSOB networks rearrangeably nonblocking allowing link-failures. We also show an interesting behavior of the  blocking  probability of a faulty VSOB networks that the blocking probability may not  always  increase monotonously with  the  increase  of  link-failures; blocking probability  decreases  for  certain range of  link-failures, and then increases again. We believe that such fluctuating behavior of blocking probability with the increase of link failure probability deserves special attention in switch design.  Keywords: Banyan networks; Blocking probability; Switching networks; Vertical stacking; Link-failures. © 2009 JSR Publications. ISSN: 2070-0237(Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v1i1.1070

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