Interferometric measurement of the temperature dependence of an index of refraction: application to fused silica

2010 ◽  
Vol 49 (4) ◽  
pp. 678 ◽  
Author(s):  
Paul-Edouard Dupouy ◽  
Matthias Büchner ◽  
Philippe Paquier ◽  
Gérard Trénec ◽  
Jacques Vigué
Keyword(s):  
Temperature Dependence ◽  
Fused Silica ◽  
Index Of Refraction ◽  
Interferometric Measurement

Silicon Fringe Sample Metrology—A Thickness Measurement Technique

2013 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Measurement Technique ◽  
Thickness Measurement ◽  
Sample Thickness ◽  
Index Of Refraction ◽  
Interference Fringes ◽  
Noncontact Method ◽  
Thickness Variations

Abstract Silicon’s index of refraction has a strong temperature coefficient. This temperature dependence can be used to aid sample thinning procedures used for backside analysis, by providing a noncontact method of measuring absolute sample thickness. It also can remove slope ambiguity while counting interference fringes (used to determine the direction and magnitude of thickness variations across a sample).

Atomic Oxygen Plasma Effects on Cvd Deposited Diamond-Like Carbon Films

1991 ◽  
Vol 236 ◽  
Author(s):  
Jeffrey S. Hale ◽  
R.A. Synowicki ◽  
S. Nafis ◽  
John A. Woollam
Keyword(s):  
Atomic Oxygen ◽  
Moisture Absorption ◽  
Crystalline Silicon ◽  
Carbon Films ◽  
Fused Silica ◽  
Low Earth Orbit ◽  
Index Of Refraction ◽  
Earth Orbit ◽  
Diamond Like Carbon ◽  
Space Flights

AbstractCVD deposited diamond-like carbon (DLC) films have been studied for possible use as a secondary standard for Low Earth Orbit materials degradation. Samples of various thicknesses have been exposed to a simulated Low Earth Orbit atomic oxygen (AO) environment using a plasma asher. Mass loss measurements indicate that DLC degrades at a rate of 0.7 mg/hr which is two to three times the rate of currently used Kapton samples which degrade at a rate of.3 mg/hr. Thickness measurements show that DLC thins at a rate of 77 Angstroms/min. Since DLC is not as susceptible to environmental factors such as moisture absorption, it could potentially provide more accurate measurements of AO fluence on short space flights. Adhesion of DLC films to both fused silica and crystalline silicon substrates has been studied under thermal cycling conditions. Film adhesion to fused silica can be enhanced by sputtering a thin layer of silicon dioxide onto the substrate prior to deposition. In addition to the above, the index of refraction and extinction coefficient of various thicknesses of DLC films has been characterized by Variable Angle Spectroscopic Ellipsometry.

Atomic Oxygen Plasma Effects on CVD Deposited Diamond-Like Carbon Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Jeffrey S. Hale ◽  
R. A. Synowicki ◽  
S. Nails ◽  
John A. Woollam
Keyword(s):  
Atomic Oxygen ◽  
Moisture Absorption ◽  
Crystalline Silicon ◽  
Carbon Films ◽  
Fused Silica ◽  
Low Earth Orbit ◽  
Index Of Refraction ◽  
Earth Orbit ◽  
Diamond Like Carbon ◽  
Space Flights

ABSTRACTCVD deposited diamond-like carbon (DLC) films have been studied for possible use as a secondary standard for Low Earth Orbit materials degradation. Samples of various thicknesses have been exposed to a simulated Low Earth Orbit atomic oxygen (AO) environment using a plasma asher. Mass loss measurements indicate that DLC degrades at a rate of 0.7 mg/hr which is two to three times the rate of currently used Kapton samples which degrade at a rate of.3 mg/hr. Thickness measurements show that DLC thins at a rate of 77 Angstroms/min. Since DLC is not as susceptible to environmental factors such as moisture absorption, it could potentially provide more accurate measurements of AO fluence on short space flights. Adhesion of DLC films to both fused silica and crystalline silicon substrates has been studied under thermal cycling conditions. Film adhesion to fused silica can be enhanced by sputtering a thin layer of silicon dioxide onto the substrate prior to deposition. In addition to the above, the index of refraction and extinction coefficient of various thicknesses of DLC films has been characterized by Variable Angle Spectroscopic Ellipsometry.

Spin Relaxation of Atomic Hydrogen in Fused Silica: Temperature Dependence

1966 ◽  
Vol 145 (1) ◽  
pp. 237-240 ◽  
Author(s):  
D. W. Feldman ◽  
J. G. Castle ◽  
G. R. Wagner
Keyword(s):  
Temperature Dependence ◽  
Spin Relaxation ◽  
Atomic Hydrogen ◽  
Fused Silica

scholarly journals Characterization of Thermally Annealed Sb Implanted Fused Silica

1993 ◽  
Vol 316 ◽  
Author(s):  
S.H. Morgan ◽  
Z. Pan ◽  
D.O. Henderson ◽  
S.Y. Park ◽  
R.A. Weeks ◽  
...  
Keyword(s):  
Chemical Properties ◽  
Annealing Treatment ◽  
Local Environment ◽  
Fused Silica ◽  
Index Of Refraction ◽  
Oxide Glasses ◽  
Before And After ◽  
Nonlinear Index ◽  
Optical Behavior

ABSTRACTThe local environment of the polarizable ion in heavy metal oxide glasses is postulated to strongly influence the nonlinear response of these materials. We have previously observed that post-implantation thermal annealing changes the chemical properties of the implanted layer in a different fashion in Pb- and Bi- implanted SiO2. In this paper we report the optical behavior of Sb-implanted SiO2 as a function of annealing temperature and atmosphere. High purity fused silica substrates were implanted at room temperature to a dose of 6 × 1016 ions/cm2, and subsequently annealed at temperatures from 500 to 1000 C in argon and oxygen atmospheres. RBS, optical absorption (1.8 to 6.2 eV), infrared reflectance (450 to 5000 cm-1), and nonlinear index of refraction were measured before and after annealing. The results of these measurements indicate that annealing treatment significantly affects the local environment of the implanted Sb ions, and consequently the optical response.

Temperature dependence of index of refraction of polymeric waveguides

1992 ◽  
Vol 10 (4) ◽  
pp. 420-425 ◽  
Author(s):  
R.S. Moshrefzadeh ◽  
M.D. Radcliffe ◽  
T.C. Lee ◽  
S.K. Mohapatra
Keyword(s):  
Temperature Dependence ◽  
Index Of Refraction
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