Answer to Question #50. Temperature dependence of the index of refraction

1997 ◽  
Vol 65 (10) ◽  
pp. 943-943
Author(s):  
Wolfgang Jauch
Keyword(s):  
Temperature Dependence ◽  
Index Of Refraction

Silicon Fringe Sample Metrology—A Thickness Measurement Technique

2013 ◽  
Author(s):  
Mark Kimball
Keyword(s):  
Temperature Dependence ◽  
Temperature Coefficient ◽  
Measurement Technique ◽  
Thickness Measurement ◽  
Sample Thickness ◽  
Index Of Refraction ◽  
Interference Fringes ◽  
Noncontact Method ◽  
Thickness Variations

Abstract Silicon’s index of refraction has a strong temperature coefficient. This temperature dependence can be used to aid sample thinning procedures used for backside analysis, by providing a noncontact method of measuring absolute sample thickness. It also can remove slope ambiguity while counting interference fringes (used to determine the direction and magnitude of thickness variations across a sample).

Interferometric measurement of the temperature dependence of an index of refraction: application to fused silica

2010 ◽  
Vol 49 (4) ◽  
pp. 678 ◽  
Author(s):  
Paul-Edouard Dupouy ◽  
Matthias Büchner ◽  
Philippe Paquier ◽  
Gérard Trénec ◽  
Jacques Vigué
Keyword(s):  
Temperature Dependence ◽  
Fused Silica ◽  
Index Of Refraction ◽  
Interferometric Measurement

Temperature dependence of index of refraction of polymeric waveguides

1992 ◽  
Vol 10 (4) ◽  
pp. 420-425 ◽  
Author(s):  
R.S. Moshrefzadeh ◽  
M.D. Radcliffe ◽  
T.C. Lee ◽  
S.K. Mohapatra
Keyword(s):  
Temperature Dependence ◽  
Index Of Refraction

Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene
Keyword(s):  
Temperature Dependence ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Index Of Refraction ◽  
Strong Temperature Dependence ◽  
Heating And Cooling ◽  
Wafer Processing ◽  
And Control ◽  
Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

Temperature Dependence of Optical Properties and Minority Carrier Diffusion Length in a-SiGe:H,F

1987 ◽  
Vol 95 ◽  
Author(s):  
R. Schwarz ◽  
K. Dietrich ◽  
S. Goedecker ◽  
J. Kolodzey ◽  
D. Slobodin ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Band Gap ◽  
Temperature Coefficient ◽  
Minority Carrier ◽  
Diffusion Length ◽  
Index Of Refraction ◽  
Complex Dielectric Constant ◽  
Optical Parameters ◽  
Minority Carrier Diffusion Length ◽  
Carrier Diffusion

AbstractWe report the temperature dependence of several optical parameters of thin films of hydrogenated and fluorinated amorphous silicon alloys (a-SiGe:H,F) between 5 and 95 °C. The absorption coefficient near the optical band gap Eg increases with temperature. From this increase we calculate a temperature coefficient for Eg of −4.5×10−4 eV/K, which is essentially independent of band gap The concomittant change of index of refraction n was determined in the near infrared region from the interference pattern in the reflection spectra. The temperature coefficient dn/n/dT is 0.9×10−4 K−1 for un-alloyed a-Si:H,F and increases with increasing Ge atomic fraction. The changes of Eg and n with temperature are consistent with a simple quantummechanical description of the complex dielectric constant. We also report the temperature dependence of the minority carrier diffusion length in a-SiGe:H,F.

Substrate Temperature Dependence of the Optical and Electronic Properties of Glow Discharge Produced a-Ge:H

1989 ◽  
Vol 149 ◽  
Author(s):  
Yuan- Min Li ◽  
Warren A. Turner ◽  
Choochon Lee ◽  
William Paul
Keyword(s):  
Glow Discharge ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Electronic Properties ◽  
Dark Conductivity ◽  
Index Of Refraction ◽  
Atmospheric Contamination ◽  
Optical And Electronic Properties ◽  
Substrate Temperatures ◽  
Post Deposition

ABSTRACTGlow discharge a-Ge:H films produced at substrate temperatures (Tδ) between 50°C and 350°C, with and without a top a-Si:H capping layer, have been studied. The uncapped samples produced at Tδ < 250°C suffer severe post-deposition atmospheric contamination, resulting in orders of magnitude of unstable increase in both the photoresponse and dark conductivity. The capped samples, which have very much reduced immediate post-deposition contamination, show only small increases in the efficiency-mobility-lifetime product (ŋμτ) with increasing Tδ. This contrasts with the results of earlier similar studies on uncapped samples, which showed a peak in either the photoconductivity1 or the ratio of photoconductivity to dark conductivity2 for 150°C < Tδ < 2000C. We have also observed a decrease in the bandgap, a narrowing of the band-tails, an increase in the index of refraction, and a reduction of hydrogen content of the films with increasing Tδ.

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