Analysis and investigation of temperature and hydrostatic pressure effects on optical characteristics of multiple quantum well slow light devices

2017 ◽  
Vol 56 (26) ◽  
pp. 7331 ◽  
Author(s):  
Saeed Abdolhosseini ◽  
Reza Kohandani ◽  
Hassan Kaatuzian
1990 ◽  
Vol 04 (14) ◽  
pp. 917-920 ◽  
Author(s):  
Y. FU

The temperature and hydrostatic pressure dependence of GaAs/AlxGa1−xAs multiple quantum well subband structures has been examined theoretically. Such effects on the subband energy measured from the corresponding band optimum are negligible, and therefore, the temperature and the hydrostatic pressure coefficients of these multiple quantum wells are dominated by those coefficients of the bulk GaAs bandgap.


2007 ◽  
Vol 46 (4B) ◽  
pp. 2558-2562 ◽  
Author(s):  
Tzer-En Nee ◽  
Chih-Chun Ke ◽  
Cheng-Wei Hung ◽  
Jen-Cheng Wang ◽  
Hui-Tang Shen ◽  
...  

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.


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