30 GHz Relaxation Resonance Frequency and 35 Gbit/s Data Rate in Single-Mode 850 nm VCSELs

Author(s):  
James A. Lott ◽  
Nikolay N. Ledentsov ◽  
Sergey A. Blokhin ◽  
Leonid Ya. Karachinsky
2019 ◽  
Vol 27 (15) ◽  
pp. 21395 ◽  
Author(s):  
Kangmei Li ◽  
Xin Chen ◽  
Jason E. Hurley ◽  
Jeffery S. Stone ◽  
Ming-Jun Li

2012 ◽  
Vol 9 (5) ◽  
pp. 377-380 ◽  
Author(s):  
V V Spirin ◽  
C A López-Mercado ◽  
P Mégret ◽  
A A Fotiadi

2021 ◽  
Author(s):  
Dongwan Kim ◽  
Mark Harfouche ◽  
Huolei Wang ◽  
Christos T. Santis ◽  
Yaakov Vilenchik ◽  
...  

Abstract We have recently introduced a new semiconductor laser design which is based on an extreme, 99%, reduction of the laser mode absorption losses. This was achieved by a laser mode design which confines the great majority of the modal energy (> 99%) in a low-loss Silicon guiding layer rather than in highly-doped, thus lossy, III-V p+ and n+ layers, which is the case with traditional III-V lasers. The resulting reduced electron-field interaction leads directly to a commensurate reduction of the spontaneous emission rate by the excited conduction band electrons into the laser mode and thus to a reduction of the frequency noise spectral density of the laser field often characterized by the Schawlow-Townes linewidth. In this paper, we demonstrate theoretically and present experimental evidence of yet another major beneficial consequence of the new laser design: a near total elimination of the contribution of amplitude-phase coupling (the Henry α parameter) to the frequency noise at “high” frequencies. This is due to an order of magnitude lowering of the relaxation resonance frequency of the laser. The practical elimination of this coupling enables yet another order of magnitude reduction of the frequency noise at high frequencies, resulting in a quantum-limited frequency noise spectral density of 130 Hz2/Hz (linewidth of 0.4 kHz) for frequencies beyond 680 MHz. This development is of key importance in the drive to semiconductor lasers with higher coherence, particularly in the context of integrated photonics with a small laser footprint.


2017 ◽  
Vol 53 (13) ◽  
pp. 869-871 ◽  
Author(s):  
E. Simpanen ◽  
J.S. Gustavsson ◽  
E. Haglund ◽  
E.P. Haglund ◽  
A. Larsson ◽  
...  

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Rajendraprasad A. Pagare ◽  
Santosh Kumar ◽  
Abhilasha Mishra

AbstractIn this paper, we have presented the design and simulation of a 7-channel next-generation passive optical network (NG-PON2) network for the deployment of Fiber-to-the-X (FTTX) access network. Coexistence architecture is proposed, designed and simulated for the implementation of NG-PON2 access network. In a coexistence architecture approach, legacy PON networks like Gigabit passive optical network (GPON) PON, 10GPON, etc. and wavelength division multiplexing (WDM)-PON supporting point-to-point connectivity are designed and simulated together. A 4 W 4 WDM-PON in which each channel carrying data at 2.5 Gbps data rate is capable of supporting a throughput channel capacity of 65.5 Gbps. NG-PON2 network is designed and simulated at 187.1, 187.2, 187.3 and 187.5 to 187.8 THz wavelengths in downstream direction for different link distances from 40 to 80 km looking into the requirement of reach of access network for future cities. The network performance parameters such as bit error rate (BER), quality factor (Q-factor), signal-to-noise ratio using the Optisystem-16 simulator at above data rates and link distances. Further, channel capacity estimation is done for single-mode fiber channel coexistence NG-PON2 configuration up to 80 km supporting BER e-13 and Q-factor 7 for WDM link and BER e-12 and Q-factor 7 for a legacy network supporting almost-1 Gbps data rate to 65 users and 100 Mbps to 512 user.


2010 ◽  
Vol 18 (7) ◽  
pp. 7047 ◽  
Author(s):  
Wesley D. Sacher ◽  
Eric J. Zhang ◽  
Brett A. Kruger ◽  
Joyce K. S. Poon

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