Magnetically Actuated Complementary Metal Oxide Semiconductor Resonant Cantilever Gas Sensor Systems

2005 ◽  
Vol 77 (9) ◽  
pp. 2690-2699 ◽  
Author(s):  
C. Vančura ◽  
M. Rüegg ◽  
Y. Li ◽  
C. Hagleitner ◽  
A. Hierlemann
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Sensor Systems ◽  
Magnetically Actuated ◽  
Resonant Cantilever

Metal Oxide-Based Monolithic Complementary Metal Oxide Semiconductor Gas Sensor Microsystem

2004 ◽  
Vol 76 (15) ◽  
pp. 4437-4445 ◽  
Author(s):  
Markus Graf ◽  
Diego Barrettino ◽  
Stefano Taschini ◽  
Christoph Hagleitner ◽  
Andreas Hierlemann ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gas Sensor ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Gas Sensor

Computational study of the staircase molecular conductivity of polyoxovanadates adsorbed on Au(111)

2021 ◽  
Vol 50 (16) ◽  
pp. 5540-5551
Author(s):  
Almudena Notario-Estévez ◽  
Xavier López ◽  
Coen de Graaf
Keyword(s):  
Metal Oxide ◽  
Computational Study ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Molecular Conduction ◽  
Conduction Properties ◽  
Molecular Conductivity

This computational study presents the molecular conduction properties of polyoxovanadates V6O19 (Lindqvist-type) and V18O42, as possible successors of the materials currently in use in complementary metal–oxide semiconductor (CMOS) technology.

scholarly journals Field Study of Metal Oxide Semiconductor Gas Sensors in Temperature Cycled Operation for Selective VOC Monitoring in Indoor Air

Atmosphere ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 647
Author(s):  
Tobias Baur ◽  
Johannes Amann ◽  
Caroline Schultealbert ◽  
Andreas Schütze
Keyword(s):  
Air Quality ◽  
Metal Oxide ◽  
Gas Sensor ◽  
Gas Sensors ◽  
Indoor Air ◽  
Ambient Air ◽  
Quantitative Agreement ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temporal Resolution

More and more metal oxide semiconductor (MOS) gas sensors with digital interfaces are entering the market for indoor air quality (IAQ) monitoring. These sensors are intended to measure volatile organic compounds (VOCs) in indoor air, an important air quality factor. However, their standard operating mode often does not make full use of their true capabilities. More sophisticated operation modes, extensive calibration and advanced data evaluation can significantly improve VOC measurements and, furthermore, achieve selective measurements of single gases or at least types of VOCs. This study provides an overview of the potential and limits of MOS gas sensors for IAQ monitoring using temperature cycled operation (TCO), calibration with randomized exposure and data-based models trained with advanced machine learning. After lab calibration, a commercial digital gas sensor with four different gas-sensitive layers was tested in the field over several weeks. In addition to monitoring normal ambient air, release tests were performed with compounds that were included in the lab calibration, but also with additional VOCs. The tests were accompanied by different analytical systems (GC-MS with Tenax sampling, mobile GC-PID and GC-RCP). The results show quantitative agreement between analytical systems and the MOS gas sensor system. The study shows that MOS sensors are highly suitable for determining the overall VOC concentrations with high temporal resolution and, with some restrictions, also for selective measurements of individual components.

scholarly journals Universal Filter Based on Compact CMOS Structure of VDDDA

Sensors ◽  
2021 ◽  
Vol 21 (5) ◽  
pp. 1683
Author(s):  
Winai Jaikla ◽  
Fabian Khateb ◽  
Tomasz Kulej ◽  
Koson Pitaksuttayaprot
Keyword(s):  
Metal Oxide ◽  
Dynamic Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Metal Oxide Semiconductor ◽  
Experimental Results ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Voltage Gain ◽  
Universal Filter ◽  
Mos Transistor

This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is −49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.

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