High transconductance InP metal-insulator-semiconductor field effect transistors for monolithic optoelectronic integration

1987 ◽  
Author(s):  
A. ANTREASYAN ◽  
P. A. GARBINSKI ◽  
V. D. MATTERA ◽  
N. J. SHAH ◽  
H. TEMKIN
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Optoelectronic Integration ◽  
High Transconductance

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

1994 ◽  
Vol 64 (20) ◽  
pp. 2706-2708 ◽  
Author(s):  
J. Reed ◽  
Z. Fan ◽  
G. B. Gao ◽  
A. Botchkarev ◽  
H. Morkoç
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High Transconductance

RF Performance of High Transconductance and High-Channel-Mobility Surface-Channel Polycrystalline Diamond Metal-Insulator-Semiconductor Field-Effect Transistors

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2611-2614 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Takuya Arima ◽  
Naoki Fujihara ◽  
Hirotada Taniuchi ◽  
Hiroaki Ishizaka ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Polycrystalline Diamond ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Channel Mobility ◽  
Rf Performance ◽  
High Transconductance

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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