High‐speed enhancement mode InP metal‐insulator‐semiconductor field‐effect transistors exhibiting very high transconductance

1986 ◽  
Vol 49 (9) ◽  
pp. 513-515 ◽  
Author(s):  
A. Antreasyan ◽  
P. A. Garbinski ◽  
V. D. Mattera ◽  
H. Temkin
Keyword(s):  
Field Effect ◽  
High Speed ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
High Transconductance ◽  
Very High

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

GaAs metal insulator semiconductor capacitors and high transconductance metal insulator semiconductor field effect transistors

1994 ◽  
Vol 64 (20) ◽  
pp. 2706-2708 ◽  
Author(s):  
J. Reed ◽  
Z. Fan ◽  
G. B. Gao ◽  
A. Botchkarev ◽  
H. Morkoç
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
High Transconductance

Enhancement-Mode N-Polar GaN Metal–Insulator–Semiconductor Field Effect Transistors with Current Gain Cutoff Frequency of 120 GHz

2011 ◽  
Vol 4 (2) ◽  
pp. 024103 ◽  
Author(s):  
Uttam Singisetti ◽  
Man Hoi Wong ◽  
Sansaptak Dasgupta ◽  
James S. Speck ◽  
Umesh K. Mishra
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Current Gain ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode
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