Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment
2019 ◽
Vol 7
(29)
◽
pp. 8855-8860
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Keyword(s):
The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.
2007 ◽
Vol 46
(4B)
◽
pp. 2348-2351
◽
1991 ◽
Vol 30
(Part 1, No. 6)
◽
pp. 1190-1193
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