Systems approach to facet reflectivity optimization of laser diodes for optical heterodyne frequency-shift-keyed communication systems

Author(s):  
D. WELFORD
2021 ◽  
Author(s):  
Vladimir Sergeevich Milyutin ◽  
Eugeniy Vasilevich Rogozhnikov ◽  
Kirill Petrovskiy ◽  
Dmitriy Pokamestov ◽  
Edgar Dmitriyev ◽  
...  

Abstract Frequency synchronization is a necessary operation for all wireless communication systems. Due to the wide frequency range defined for 5G NR systems, this procedure becomes critical. To ensure high transmission rates and the use of high-order modulation, up to 256 QAM for 5G communication systems, it is necessary to ensure high frequency synchronization accuracy. In this article, we have reviewed various approaches to implementing frequency synchronization and proposed, in our opinion, the most effective method for correcting the frequency shift of the signal.


2021 ◽  
Vol 3 (1) ◽  
pp. 6-8
Author(s):  
João Paulo N. Torres ◽  
Carlos A. F. Fernandes ◽  
Ricardo A. Marques Lameirinhas

The stochastic resonance (SR) in direct-modulated laser diodes is investigated using an analytical approach based on the laser rate equations for the carrier and photon densities, that include the cross correlation between the photon and carrier noises. This subject may be particularly important in the domain of Optical Communication Systems, where increasing demands on laser performance have led to the fabrication of more and more complex structures. In viewing the development of the associated technology, the importance of the simulation tools revealed of crucial importance.


2001 ◽  
Vol 692 ◽  
Author(s):  
Hajime Asahi ◽  
Hwe-Jae Lee ◽  
Akiko Mizobata ◽  
Kenta Konishi ◽  
Osamu Maeda ◽  
...  

AbstractTlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (−0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/InP light emitting diodes with 6% Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy (−0.09 meV/K) was observed at the wavelength around 1.58 μm. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.


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