High Extinction Ratio Low-voltage Dual-Racetrack Modulator for Low-Power DAC-less PAM4 Modulation

2022 ◽  
Author(s):  
Zhaobang Zeng ◽  
Lemeng Leng ◽  
Peiyan Zhao ◽  
Chenbin Zhang ◽  
Ding Ding ◽  
...  
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Extinction Ratio

Low-voltage, high-extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator

2011 ◽  
Author(s):  
Jianfeng Ding ◽  
Hongtao Chen ◽  
Ruiqiang Ji ◽  
Lin Yang ◽  
Yonghui Tian ◽  
...  
Keyword(s):  
Low Voltage ◽  
Extinction Ratio ◽  
Optical Modulator ◽  
High Extinction Ratio

scholarly journals Low-voltage, high-extinction-ratio, Mach-Zehnder silicon optical modulator for CMOS-compatible integration

2012 ◽  
Vol 20 (3) ◽  
pp. 3209 ◽  
Author(s):  
Jianfeng Ding ◽  
Hongtao Chen ◽  
Lin Yang ◽  
Lei Zhang ◽  
Ruiqiang Ji ◽  
...  
Keyword(s):  
Low Voltage ◽  
Extinction Ratio ◽  
Optical Modulator ◽  
High Extinction Ratio ◽  
Cmos Compatible

Low-voltage, high extinction ratio carrier-depletion Mach-Zehnder silicon optical modulator

2011 ◽  
Author(s):  
Ding Jianfeng ◽  
Chen Hongtao ◽  
Ji Ruiqiang ◽  
Yang Lin ◽  
Tian Yonghui ◽  
...  
Keyword(s):  
Low Voltage ◽  
Extinction Ratio ◽  
Optical Modulator ◽  
High Extinction Ratio

Analysis of 6T SRAM Cell in Different Technologies

2017 ◽  
Vol MCSP2017 (01) ◽  
pp. 7-10 ◽  
Author(s):  
Subhashree Rath ◽  
Siba Kumar Panda
Keyword(s):  
Low Power ◽  
Data Storage ◽  
Low Voltage ◽  
Random Access ◽  
Storage Device ◽  
Cmos Process ◽  
Process Technology ◽  
Digital Devices ◽  
Noise Margin ◽  
Sram Cell

Static random access memory (SRAM) is an important component of embedded cache memory of handheld digital devices. SRAM has become major data storage device due to its large storage density and less time to access. Exponential growth of low power digital devices has raised the demand of low voltage low power SRAM. This paper presents design and implementation of 6T SRAM cell in 180 nm, 90 nm and 45 nm standard CMOS process technology. The simulation has been done in Cadence Virtuoso environment. The performance analysis of SRAM cell has been evaluated in terms of delay, power and static noise margin (SNM).

scholarly journals A high extinction ratio plasmonic SU-8 waveguide polarizer

2021 ◽  
Vol 487 ◽  
pp. 126798
Author(s):  
Peyman Malekzadeh ◽  
Gholam-Mohammad Parsanasab ◽  
Hamed Nikbakht ◽  
Ezeddin Mohajerani ◽  
Majid Taghavi ◽  
...  
Keyword(s):  
Extinction Ratio ◽  
High Extinction Ratio

High extinction‐ratio microstructure fiber based on chalcogenide glasses

2021 ◽  
Author(s):  
Tiesong Xu ◽  
Minghui Zhong ◽  
Xiaolin Liang ◽  
Jia Liu ◽  
Bin Yan ◽  
...  
Keyword(s):  
Chalcogenide Glasses ◽  
Extinction Ratio ◽  
High Extinction Ratio ◽  
Microstructure Fiber

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Sign in / Sign up

Export Citation Format

Share Document