scholarly journals Spatially-microstructured topology of chalcogenide glasses by a combination of electrothermal process and selective etching for functional infrared media

2021 ◽  
Author(s):  
Lara Karam ◽  
Ricardo Alvarado ◽  
Florian Calzavara ◽  
Redouane Dahmani ◽  
Myungkoo Kang ◽  
...  
Keyword(s):  
Chalcogenide Glasses ◽  
Selective Etching ◽  
Electrothermal Process

In Situ microscopy of the anodic etching of silicon

1995 ◽  
Vol 53 ◽  
pp. 232-233
Author(s):  
Frances M. Ross ◽  
Peter C. Searson
Keyword(s):  
Composite Structures ◽  
High Surface ◽  
High Surface Area ◽  
Chemical Properties ◽  
Selective Etching ◽  
Silicon On Insulator ◽  
Second Phase ◽  
Porous Layers ◽  
New Class ◽  
Porous Semiconductors

Porous semiconductors represent a relatively new class of materials formed by the selective etching of a single or polycrystalline substrate. Although porous silicon has received considerable attention due to its novel optical properties1, porous layers can be formed in other semiconductors such as GaAs and GaP. These materials are characterised by very high surface area and by electrical, optical and chemical properties that may differ considerably from bulk. The properties depend on the pore morphology, which can be controlled by adjusting the processing conditions and the dopant concentration. A number of novel structures can be fabricated using selective etching. For example, self-supporting membranes can be made by growing pores through a wafer, films with modulated pore structure can be fabricated by varying the applied potential during growth, composite structures can be prepared by depositing a second phase into the pores and silicon-on-insulator structures can be formed by oxidising a buried porous layer. In all these applications the ability to grow nanostructures controllably is critical.

ULTRASONIC STUDIES OF THE POLYMER STRUCTURE OF THE CHALCOGENIDE GLASSES

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-955-C4-958
Author(s):  
V. A. Ratobylskaja ◽  
L. A. Simonova
Keyword(s):  
Chalcogenide Glasses ◽  
Polymer Structure

HARDNESS AND THERMAL CONDUCTIVITY OF As-Se-Te CHALCOGENIDE GLASSES

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-931-C4-934 ◽  
Author(s):  
M. F. Kotkata ◽  
M.B. El-den
Keyword(s):  
Thermal Conductivity ◽  
Chalcogenide Glasses

HIGH-SPEED TRANSIENT EFFECTS IN CHALCOGENIDE GLASSES

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
T. Shiraishi ◽  
D. Adler
Keyword(s):  
Chalcogenide Glasses ◽  
High Speed ◽  
Transient Effects

COMPARISON OF OPTICALLY INDUCED LOCALIZED STATES IN CHALCOGENIDE GLASSES AND THEIR CRYSTALLINE COUNTERPARTS

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-383-C4-386 ◽  
Author(s):  
S. G. Bishop ◽  
B. V. Shanabrook ◽  
U. Strom ◽  
P. C. Taylor
Keyword(s):  
Chalcogenide Glasses ◽  
Localized States ◽  
Optically Induced

Effect of Sb on Structure and Physical Properties of GeSb$lt;inf$gt;x$lt;/inf$gt;Se$lt;inf$gt;7-x$lt;/inf$gt; Chalcogenide Glasses

2014 ◽  
Vol 29 (11) ◽  
pp. 1218 ◽  
Author(s):  
WEI Wen-Hou ◽  
FANG Liang ◽  
YANG Zhi-Yong ◽  
SHEN Xiang
Keyword(s):  
Physical Properties ◽  
Chalcogenide Glasses

Activation energy of relaxation processes in chalcogenide glasses

2013 ◽  
Vol 34 (0) ◽  
pp. 59-63
Author(s):  
А. А. Горват ◽  
В. М. Кришеник ◽  
А. Е. Кріштофорій ◽  
В. В. Мінькович ◽  
О. А. Молнар
Keyword(s):  
Activation Energy ◽  
Chalcogenide Glasses ◽  
Relaxation Processes

Interpretation of infrared spectra of chalcogenide glasses Se95As5 impurited by samarium

2015 ◽  
Vol 11 (1) ◽  
pp. 2914-2917
Author(s):  
Alekberov R.I ◽  
Mekhtiyeva S.I ◽  
Isayev A.I ◽  
Mammadova H.I.
Keyword(s):  
Infrared Spectra ◽  
Chalcogenide Glasses ◽  
Amorphous Selenium ◽  
Structural Elements

In work investigated with method IR of spectroscopy of amorphous selenium andsystem Se95As5 containing impurity samarium. It is certain that, in IR a spectrum of amorphous selenium due to hypervalent defects maxima with different intensity are observed in 230 and 270 cm-1.Increase of the concentration of impurity samarium in spectrum Se95As5, the maximum arises with 400cm-1frequency which, are connected with SmSe3 structural elements.

The diffusion coefficients 110mAg isotope in copper-contained chalcogenide films obtained by chemical deposition

2016 ◽  
Author(s):  
Д.Л. Байдаков
Keyword(s):  
Diffusion Coefficients ◽  
Chalcogenide Glasses ◽  
Film Formation ◽  
Polymer Network ◽  
Chemical Deposition ◽  
Film Deposition ◽  
Constant Current ◽  
Residual Pressure ◽  
Quartz Ampoule ◽  
Chalcogenide Films

Методом химического нанесения из растворов халькогенидных стекол в н-бутиламине получены многокомпонентные халькогенидные пленки CuI-As2Se3, CuI-PbI2-As2Se3, CuI-SbI3-As2Se3, CuI-SbI3-PbI2-As2Se3. Синтез многокомпонентных медьсодержащих халькогенидных стекол, использовавшихся для нанесения пленок, проводили методом вакуумной плавки в кварцевых ампулах при температуре 400…950 °С и остаточном давлении не более 0,13 Па. Закалку стекол производили от 600 °С в воду со льдом с разливом расплава в ампуле. Навеску стекла размельчали в порошок и кипятили в н-бутиламине до полного растворения. Для предотвращения процессов окисления, нанесение и отжиг пленок проводили в атмосфере химически инертного азота. Подложку помещали на устройство для вращения, наносили на нее раствор и вращали подложку со скоростью несколько тысяч оборотов в минуту. Отжиг пленок проводили при температуре 100 °С в течение 1 ч. Измерение электропроводности полученных пленок проводили на постоянном и переменном токе в зависимости от значений электропроводности в температурном интервале 20…100 °С. Измерение коэффициентов диффузии проводили абсорбционным методом. Из диффузионных экспериментов определены значения коэффициентов диффузии катионов изотопа 110mAg в медьсодержащих халькогенидных пленках. Установлено, что значения коэффициентов диффузии ионов Ag+ в химически нанесенных пленках и исходных стеклах практически не различаются. Аналогию значений коэффициентов диффузии изотопа 110mAg в халькогенидных стеклах и пленках на их основе можно объяснить сохранением полимерной сетки связей халькогенидных стекол при их растворении в органических основаниях (аминах). В процессе нанесения и формирования пленок полимерная (макромолекулярная) структура раствора халькогенидных стекол сохраняется. The method of chemical deposition from solutions of chalcogenide glasses in n-butyl amine obtained multicomponent chalcogenide films CuI-As2Se3, CuI-PbI2-As2Se3, CuI-SbI3-As2Se3, CuI-SbI3-PbI2-As2Se3. Synthesis of copper multicomponent chalcogenide glasses, used for film deposition was carried out by vacuum melting in quartz ampoule at a temperature of 400…950 °C and a residual pressure of not more than 0.13 Pa. The temperature of glass produced from the 600 °C to the ice water spill of the melt in the ampoule. Weigh glass comminuted to a powder and heated in n-butylamine until complete dissolution. To prevent oxidation, deposition and annealing of the films was carried out in an atmosphere of nitrogen chemically inert. The substrate is placed on a device for rotating, it was applied to the solution and the substrate was rotated at a speed of several thousand revolutions per minute. Annealing of the films was carried out at 100 °C for 1 hour. Measurement of the electrical conductivity of the obtained films was conducted at a constant current and variable depending on the conductivity values ​​in the temperature range from 20 to 100 °C. Measurement of diffusion coefficients was performed according to the absorption method. From diffusion experiments, the values ​​of the diffusion coefficients 110mAg isotope cations in copper chalcogenide films. It was found that the values ​​of the diffusion coefficients of the ions Ag+ in a chemically deposited films and the original glasses are indistinguishable. The analogy of the diffusion coefficient values ​​110mAg isotope in chalcogenide glasses and films based on them can be attributed to the preservation of the polymer network connections chalcogenide glasses when dissolved in organic bases (amines). During application and film formation the polymer (macromolecular) structure of chalcogenide glasses of the solution is maintained.

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