Single Crystalline SrTiO3 as a Memristive Model System: Roles of Oxygen Vacancies and Schottky Barrier, and Neural Function Mimicking

2015 ◽  
Author(s):  
Xin Guo
Keyword(s):  
Schottky Barrier ◽  
Oxygen Vacancies ◽  
Model System ◽  
Neural Function ◽  
Single Crystalline

Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates

2010 ◽  
Vol 31 (5) ◽  
pp. 422-424 ◽  
Author(s):  
William Hsu ◽  
Cheng-Yi Peng ◽  
Cheng-Ming Lin ◽  
Yen-Yu Chen ◽  
Yen-Ting Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Single Crystalline

A Method of Combining the Increased Density of Acceptors with Restrained Density of Oxygen Vacancies to Fabricate p-Type Single-Crystalline ZnO Films

2018 ◽  
Vol 48 (2) ◽  
pp. 780-786 ◽  
Author(s):  
Zhiyuan Zhang ◽  
Jingyun Huang ◽  
Shanshan Chen ◽  
Xinhua Pan ◽  
Lingxiang Chen ◽  
...  
Keyword(s):  
Oxygen Vacancies ◽  
Zno Films ◽  
Single Crystalline ◽  
P Type

Characterization of Schottky barrier diodes on a 0.5-inch single-crystalline CVD diamond wafer

2010 ◽  
Vol 19 (2-3) ◽  
pp. 208-212 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshiaki Mokuno ◽  
Hideaki Yamada ◽  
Akiyoshi Chayahara ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Cvd Diamond ◽  
Schottky Barrier Diodes ◽  
Single Crystalline

DIELECTRIC PROPERTIES OF Ca2CuO3–CaCu2O3–CuO COMPOSITE CERAMICS

2013 ◽  
Vol 27 (06) ◽  
pp. 1350042 ◽  
Author(s):  
QING-SHOU LI ◽  
YUN-QIANG ZHANG ◽  
LI-BEN LI ◽  
GUO-ZHONG ZANG
Keyword(s):  
Dielectric Properties ◽  
Schottky Barrier ◽  
Dielectric Response ◽  
Oxygen Vacancies ◽  
Arrhenius Equation ◽  
Composite Ceramics ◽  
High Dielectric ◽  
Sintering Method ◽  
Very High ◽  
Barrier Model

The Ca 2 CuO 3– CaCu 2 O 3– CuO ceramics were synthesized by traditional solid-state sintering method. The complex dielectric response of the samples measured from 102–106 Hz and from 300–500 K reveals very high real part of ε > 104. The activation energy (being about 0.63 eV) calculated by the Arrhenius equation indicates that the oxygen vacancies may contribute to the high dielectric response. And the fitting to a Schottky barrier model of capacitance versus applied voltage suggests that the existence of Schottky barrier at the grain boundaries may be another important reason for the origination of good dielectric properties.

Ultrathin Single-crystalline MgO (111) Nanosheets

2020 ◽  
Author(s):  
Pengxin Liu ◽  
Paula M. Abdala ◽  
Guillaume Goubert ◽  
Marc Willinger ◽  
Christophe Copéret
Keyword(s):  
Low Temperatures ◽  
Oxygen Vacancies ◽  
High Energy ◽  
Grand Challenge ◽  
High Quality ◽  
Dynamic Vacuum ◽  
Single Crystalline ◽  
Oh Groups ◽  
Single Electrons ◽  
Energy Surfaces

Synthesizing high-quality two-dimensional nanomaterials of non-layered metal oxide is a grand challenge because it requires long range single-crystallinity and clean high-energy surfaces. Here, we report the synthesis of single-crystalline MgO(111) nanosheets via a two-step process involving the formation of ultrathin Mg(OH)<sub>2</sub> nanosheets as precursor and their selective topotactic conversion upon heating under dynamic vacuum. The defect-rich surface displays terminal -OH groups, 3-coordinated O<sup>2-</sup> sites, low-coordinated Mg<sup>2+</sup> sites as well as single electrons trapped at oxygen vacancies, that render MgO nanosheets highly reactive as evidenced by the activation of CO molecules at low temperatures and pressures, with formation of strongly adsorbed red-shifted CO and coupling of CO molecules into C<sub>2</sub> species.

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