Roles of Schottky barrier and oxygen vacancies in the electroforming of SrTiO3

2012 ◽  
Vol 101 (15) ◽  
pp. 152903 ◽  
Author(s):  
Xin Guo
Keyword(s):  
Schottky Barrier ◽  
Oxygen Vacancies

DIELECTRIC PROPERTIES OF Ca2CuO3–CaCu2O3–CuO COMPOSITE CERAMICS

2013 ◽  
Vol 27 (06) ◽  
pp. 1350042 ◽  
Author(s):  
QING-SHOU LI ◽  
YUN-QIANG ZHANG ◽  
LI-BEN LI ◽  
GUO-ZHONG ZANG
Keyword(s):  
Dielectric Properties ◽  
Schottky Barrier ◽  
Dielectric Response ◽  
Oxygen Vacancies ◽  
Arrhenius Equation ◽  
Composite Ceramics ◽  
High Dielectric ◽  
Sintering Method ◽  
Very High ◽  
Barrier Model

The Ca 2 CuO 3– CaCu 2 O 3– CuO ceramics were synthesized by traditional solid-state sintering method. The complex dielectric response of the samples measured from 102–106 Hz and from 300–500 K reveals very high real part of ε > 104. The activation energy (being about 0.63 eV) calculated by the Arrhenius equation indicates that the oxygen vacancies may contribute to the high dielectric response. And the fitting to a Schottky barrier model of capacitance versus applied voltage suggests that the existence of Schottky barrier at the grain boundaries may be another important reason for the origination of good dielectric properties.

scholarly journals The I–V Characteristics of M–BaxSr1–xTiO3–M Thin Film Structures with Oxygen Vacancies. Part 2

2020 ◽  
pp. 058-066
Author(s):  
V.V. Buniatyan ◽  
◽  
H.R. Dashtoyan ◽  
A.A. Davtyan ◽  
◽  
...  
Keyword(s):  
Thin Film ◽  
Computer Modeling ◽  
Schottky Barrier ◽  
Oxygen Vacancies ◽  
Thermal Field ◽  
Frenkel Emission ◽  
Analytical Expressions

In Part 2 of the paper, based on the results and assumptions pointed in Part 1, analytical expressions were derived for Schottky barrier thermal/field assisted and Poole-Frenkel emission currents. The computer modeling theoretical dependencies of the I–V characteristics has been compared with the experimental measured results and obtained good agreements.

scholarly journals Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2678
Author(s):  
Philipp Wendel ◽  
Dominik Dietz ◽  
Jonas Deuermeier ◽  
Andreas Klein
Keyword(s):  
Magnetron Sputtering ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Oxygen Vacancies ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Hysteresis Behavior ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Conditions for atomic imaging of mullite

1989 ◽  
Vol 47 ◽  
pp. 418-419
Author(s):  
T. A. Epicier ◽  
G. Thomas
Keyword(s):  
Oxygen Vacancies ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Work Conditions ◽  
Real Space ◽  
Potential Candidate ◽  
Silicate Mineral ◽  
Resolution Electron ◽  
The Subject ◽  
Aluminium Silicate

Mullite is an aluminium-silicate mineral of current interest since it is a potential candidate for high temperature applications in the ceramic materials field.In the present work, conditions under which the structure of mullite can be optimally imaged by means of High Resolution Electron Microscopy (HREM) have been investigated. Special reference is made to the Atomic Resolution Microscope at Berkeley which allows real space information up to ≈ 0.17 nm to be directly transferred; numerous multislice calculations (conducted with the CEMPAS programs) as well as extensive experimental through-focus series taken from a commercial “3:2” mullite at 800 kV clearly show that a resolution of at least 0.19 nm is required if one wants to get a straightforward confirmation of atomic models of mullite, which is known to undergo non-stoichiometry associated with the presence of oxygen vacancies.Indeed the composition of mullite ranges from approximatively 3Al2O3-2SiO2 (referred here as 3:2-mullite) to 2Al2O3-1SiO2, and its structure is still the subject of refinements (see, for example, refs. 4, 5, 6).

Gallium Oxide Schottky Barrier Diodes

2016 ◽  
Vol 136 (4) ◽  
pp. 479-483
Author(s):  
Masataka Higashiwaki ◽  
Kohei Sasaki ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akito Kuramata
Keyword(s):  
Schottky Barrier ◽  
Gallium Oxide ◽  
Schottky Barrier Diodes

Investigation of Some Characterizations of Black TiO\(_2\) Nanotubes Via Spectroscopic Methods

2019 ◽  
Vol 29 (2) ◽  
pp. 189 ◽  
Author(s):  
Tho Truong Nguyen ◽  
Thi Minh Cao ◽  
Hieu Van Le ◽  
Viet Van Pham
Keyword(s):  
Water Splitting ◽  
Oxygen Vacancies ◽  
Light Response ◽  
Nanotube Arrays ◽  
Spectroscopic Methods ◽  
Visible Light Response ◽  
Uv Visible ◽  
Visible Reflectance ◽  
Splitting Effect ◽  
Anodization Method

The black TiO\(_2\) with substantial Ti\(^3+\) and oxygen vacancies exhibit an excellent photoelectrochemical water-splitting performance due to the improved charge transport the extended visible light response. In this study, black TiO\(_2\) nanotube arrays synthesized by the anodization method, and then, they have been investigated some characterizations by spectroscopic methods such as UV-visible reflectance (UV-vis DRS), Fourier-transform infrared spectroscopy (FTIR), Raman spectroscopy, and photoluminescence spectrum. The results showed that some highlighted properties of the black TiO2 nanotube arrays and they could apply for water-splitting effect.

Functional Gradient Transparent Conducting Oxide Nanowire Arrays as Monophasic Schottky-Barrier Free Memristors for Bipolar Linear Switching

2020 ◽  
Author(s):  
Thomas Herzog ◽  
Naomi Weitzel ◽  
Sebastian Polarz
Keyword(s):  
Schottky Barrier ◽  
Data Storage ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Electrical Potential ◽  
High Resistance State ◽  
Nanowire Arrays ◽  
Metal Metal ◽  
Resistance State ◽  
Barrier Free

<div><div><div><p>One of the fascinating properties of metal-semiconductor Schottky-barriers, which has been observed for some material combinations, is memristive behavior. Memristors are smart, since they can reversibly switch between a low resistance state and a high resistance state. The devices offer a great potential for advanced computing and data storage, including neuromorphic networks and resistive random-access memory. However, as for many other cases, the presence of a real interface (metal - metal oxide) has numerous disadvantages. The realization of interface-free, respectively Schottky-barrier free memristors is highly desirable. The aim of the current paper is the generation of nanowire arrays with each nanorod possessing the same crystal phase (Rutile) and segments only differing in composition. The electric conductivity is realized by segments made of highly-doped antimony tin oxide (ATO) transitioning into pure tin oxide (TO). Complex nanoarchitectures are presented, which include ATO-TO, ATO-TO-ATO nanowires either with a stepwise distribution of antimony or as a graded functional material. The electrical characterization of the materials reveals that the introduction of memristive properties in such structures is possible. The special features observed in voltage-current (IV) curves are correlated to the behavior of mobile oxygen vacancies (VO..) at different values of applied electrical potential.</p></div></div></div>

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