Static Secondary Ion Mass Spectrometry and X-Ray Photoelectron Spectroscopy of Deuterium- and Methyl-Substituted Polystyrene

1991 ◽  
Vol 45 (2) ◽  
pp. 209-217 ◽  
Author(s):  
Ashutosh Chilkoti ◽  
David G. Castner ◽  
Buddy D. Ratner
1994 ◽  
Vol 339 ◽  
Author(s):  
A. T. S. Wee ◽  
Z. C. Feng ◽  
H. H. Hng ◽  
K. L. Tan ◽  
C. C. Tin ◽  
...  

ABSTRACTA series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted C.H. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.


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