Charge Integrating Amplifier in the Near-Infrared Region Using an InGaAs PIN Photodiode

1993 ◽  
Vol 47 (9) ◽  
pp. 1462-1463
Author(s):  
I. Mizumoto ◽  
S. Mashiko ◽  
N. Suzuki

A low-noise detection system using an InGaAs PIN photodiode for near-infrared spectroscopic measurement has been developed. The InGaAs PIN photodiode is more suitable than a Ge PIN photodiode for detecting low-level light in terms of dark current and quantum efficiency. The detection system consists of an InGaAs PIN photodiode with a charge integrating amplifier (InGaAs-CIA) operated at 77 K. A minimum detectable power of 10−16 W was achieved at a wavelength of 1.28 μm.

1995 ◽  
Vol 115 (2) ◽  
pp. 333-334
Author(s):  
Iwao Mizumoto ◽  
Shinzo Yamakawa ◽  
Shinro Mashiko ◽  
Nobumi Hagiwara

2021 ◽  
Vol 8 ◽  
Author(s):  
Tenghui Ouyang ◽  
Ximiao Wang ◽  
Shaojing Liu ◽  
Huanjun Chen ◽  
Shaozhi Deng

Two-dimensional (2D)-material-based photodetectors have recently received great attention due to their potentials in developing ultrathin and highly compact devices. Avalanche photodiodes (APDs) are widely used in a variety of fields such as optical communications and bioimaging due to their fast responses and high sensitivities. However, conventional APDs based on bulk materials are limited by their relatively high dark current. One solution to tackle this issue is by employing nanomaterials and nanostructures as the active layers for APDs. In this study, we proposed and fabricated an atomically-thick APD based on heterojunctions formed by 2D transition metal dichalcogenides (TMDs). A typical device structure was formed by stacking a semiconducting monolayer WS2 onto two metallic few-layer MoTe2 flakes. Due to the Schottky barrier formed between the TMD layers and their atomic thicknesses, the dark current of the APD is greatly reduced down to 93 pA. In addition, the APD can operate through a broad spectral range from visible to near-infrared region, with a responsivity of 6.02 A/W, an external quantum efficiency of 1,406%, and an avalanche gain of 587. We believe that the 2D APD demonstrated here provides a feasible approach for developing all-2D optoelectronic devices with simultaneous high-sensitivity and low noise.


1993 ◽  
Vol 29 (2) ◽  
pp. 234 ◽  
Author(s):  
I. Mizumoto ◽  
S. Mashiko

2008 ◽  
Vol 55 (2) ◽  
pp. 812-816 ◽  
Author(s):  
T. Hopf ◽  
C. Yang ◽  
S. M. Hearne ◽  
D. N. Jamieson ◽  
E. Gauja ◽  
...  

2020 ◽  
Vol 26 (2) ◽  
pp. 61-67
Author(s):  
Mohammed J. Alwazzan

AbstractDrawing blood and injecting drugs are common medical procedures, for which accurate identification of veins is needed to avoid causing unnecessary pain. In this paper, we propose a low-cost system for the detection of veins. The system emits near-infrared radiation from four light-emitting diodes (LEDs), with a charge-coupled device (CCD) camera located in the middle of the LEDs. The camera captures an image of the palm of the hand. A series of digital image-processing techniques, ranging from image enhancement and increased contrast to isolation using a threshold limit based on statistical properties, are applied to effectively isolate the veins from the rest of the image.


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