Charge Integrating Amplifier in the Near-Infrared Region Using an InGaAs PIN Photodiode
Keyword(s):
A low-noise detection system using an InGaAs PIN photodiode for near-infrared spectroscopic measurement has been developed. The InGaAs PIN photodiode is more suitable than a Ge PIN photodiode for detecting low-level light in terms of dark current and quantum efficiency. The detection system consists of an InGaAs PIN photodiode with a charge integrating amplifier (InGaAs-CIA) operated at 77 K. A minimum detectable power of 10−16 W was achieved at a wavelength of 1.28 μm.
1993 ◽
Vol 113
(12)
◽
pp. 1130-1135
1995 ◽
Vol 115
(2)
◽
pp. 333-334
1993 ◽
Vol 4
(6)
◽
pp. 665-667
◽
2008 ◽
Vol 55
(2)
◽
pp. 812-816
◽
1973 ◽
Vol 6
(10)
◽
pp. 1040-1042
◽
2020 ◽
Vol 26
(2)
◽
pp. 61-67