scholarly journals Feasibility of a New Atom Probe Specimen Preparation Method Using a Focused Ion Beam

2009 ◽  
Vol 7 ◽  
pp. 863-865 ◽  
Author(s):  
S. Mikami ◽  
N. Mayama ◽  
T. Iwata ◽  
T. Kaito ◽  
T. Adachi ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Atom Probe ◽  
Specimen Preparation

scholarly journals Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials

2015 ◽  
Vol 21 (3) ◽  
pp. 544-556 ◽  
Author(s):  
Fengzai Tang ◽  
Michael P. Moody ◽  
Tomas L. Martin ◽  
Paul A.J. Bagot ◽  
Menno J. Kappers ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Laser Energy ◽  
Ion Beam ◽  
Atom Probe ◽  
Specimen Preparation ◽  
Chemical Compositions ◽  
Pole Structure ◽  
Gan Heterostructure ◽  
Ga Content

AbstractVarious practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the reconstructed InAlN layer Ga implantation was demonstrated for the standard “clean-up” voltage (5 kV), but this was significantly reduced by using a lower voltage (e.g., 1 kV). The characteristics of APT data from the desorption maps to the mass spectra and measured chemical compositions were examined within the GaN buffer layer underlying the InAlN layer in both pulsed laser and pulsed voltage modes. The measured Ga content increased monotonically with increasing laser pulse energy and voltage pulse fraction within the examined ranges. The best results were obtained at very low laser energy, with the Ga content close to the expected stoichiometric value for GaN and the associated desorption map showing a clear crystallographic pole structure.

scholarly journals Laser-assisted atom probe tomography of semiconductors: The impact of the focused-ion beam specimen preparation

2018 ◽  
Vol 188 ◽  
pp. 19-23 ◽  
Author(s):  
J. Bogdanowicz ◽  
A. Kumar ◽  
C. Fleischmann ◽  
M. Gilbert ◽  
J. Houard ◽  
...  
Keyword(s):  
Atom Probe Tomography ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Beam Specimen ◽  
Specimen Preparation ◽  
The Impact

scholarly journals Single-Wedge Lift-Out for Atom Probe Tomography Al/Ni Multilayers Specimen Preparation Based on Dual-Beam-FIB

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 35
Author(s):  
Yi Qiao ◽  
Yalong Zhao ◽  
Zheng Zhang ◽  
Binbin Liu ◽  
Fusheng Li ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Vertex Angle ◽  
Specimen Preparation ◽  
Two Phase ◽  
Interface Composition ◽  
Damage Layer ◽  
Dual Beam ◽  
Relationship Of

Atomic probe tomography (APT) samples with Al/Ni multilayer structure were successfully prepared by using a focused ion beam (FIB), combining with a field emission scanning electron microscope, with a new single-wedge lift-out method and a reduced amorphous damage layer of Ga ions implantation. The optimum vertex angle and preparation parameters of APT sample were discussed. The double interdiffusion relationship of the multilayer films was successfully observed by the local electrode APT, which laid a foundation for further study of the interface composition and crystal structure of the two-phase composites.

scholarly journals Combined Focused Ion Beam-Ultramicrotomy Method for TEM Specimen Preparation of Porous Fine-Grained Materials

2019 ◽  
Vol 26 (1) ◽  
pp. 120-125 ◽  
Author(s):  
Kenta K. Ohtaki ◽  
Hope A. Ishii ◽  
John P. Bradley
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Combined Method ◽  
Fine Grained ◽  
Heterogeneous Samples ◽  
Transmission Electron ◽  
Fine Grained Material ◽  
The One

AbstractA new transmission electron microscopy (TEM) specimen preparation method that utilizes a combination of focused ion beam (FIB) methods and ultramicrotomy is demonstrated. This combined method retains the benefit of site-specific sampling by FIB but eliminates ion beam-induced damage except at specimen edges and allows recovery of many consecutive sections. It is best applied to porous and/or fine-grained materials that are amenable to ultramicrotomy but are located in bulk samples that are not. The method is ideal for unique samples from which every specimen is precious, and we demonstrate its utility on fine-grained material from the one-of-a-kind Paris meteorite. Compared with a specimen prepared by conventional FIB methods, the final sections are uniformly thin and free from re-deposition and curtaining artifacts common in FIB specimens prepared from porous, heterogeneous samples.

Atom Probe Field Ion Microscopy Of Multilayer Thin Films

1999 ◽  
Vol 5 (S2) ◽  
pp. 150-151
Author(s):  
D. J. Larson ◽  
A. K. Petford-Long ◽  
A. Cerezo ◽  
T. C. Anthony ◽  
M. K. Miller
Keyword(s):  
Giant Magnetoresistance ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Atom Probe ◽  
Operating Conditions ◽  
Specimen Preparation ◽  
Probe Field ◽  
Field Ion Microscopy ◽  
Ion Microscopy ◽  
Compositional Variations

Multilayer film (MLF) structures which exhibit giant-magnetoresistance (GMR) properties have applications in the areas of magnetic recording and computer memory. The magnetic properties of MLF structures are dependent upon structural and compositional variations at the atomic level. Thus, structural characterization with high spatial resolution, especially at layer interfaces, is important in order to optimize device performance with respect to processing and operating conditions. Atom probe field ion microscopy (APFIM) is one technique that has the capability to characterize the local structure and composition of MLF devices with sufficiently high resolution. However, a major difficulty has been successful specimen preparation from MLF materials, which requires fabrication of a sharply pointed needle (radius <50 nm) containing the layers of interest in the apex region. Research on specialized field ion specimen preparation techniques which use focused ion beam milling has recently enabled nanoscale MLF structures to be investigated. In the present paper, the application of atom probe microanalysis to two different MLF structures is presented.

scholarly journals Using a Focused Ion Beam (FIB) System to Extract TEM-Ready Samples from Complex Metallic and Ceramic Structures

1999 ◽  
Vol 7 (2) ◽  
pp. 12-15 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Richard Young ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Magnetic Media ◽  
Tem Analysis ◽  
Micro Fabrication ◽  
Site Specific ◽  
Transmission Electron ◽  
Two Sides

AbstractDriven by the analytical needs of microelectronics, magnetic media and micro-fabrication industries, focused ion beam (FIB) systems are now capable of milling and manipulating samples for the analysis of microstructure features having dimensions of 180 nm or less, A technique for locating and extracting site specific specimens for examination by transmission electron microscopy (TEM) has been developed. An identified feature can be located and precisely milled with an FIB system from two sides to prepare an ultrathin sample, and then extracted from the region with a glass rod micromanipulator onto a grid for TEM analysis. This specimen preparation method has been applied to semiconductor failure analysis and to the study of metallic and ceramic microsiructures with irregular topographies and complex mufti-layered components.

Microstructural Characterization of Automated Specimen Preparation for TEM Analysis

2000 ◽  
Vol 6 (S2) ◽  
pp. 528-529
Author(s):  
C. Urbanik Shannon ◽  
L. A. Giannuzzi ◽  
E. M. Raz
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Preparation Techniques

Automated specimen preparation for transmission electron microscopy has the obvious advantage of saving personnel time. While some people may perform labor intensive specimen preparation techniques quickly, automated specimen preparation performed in a timely and reproducible fashion can significantly improve the throughput of specimens in an industrial laboratory. The advent of focused ion beam workstations for the preparation of electron transparent membranes has revolutionized TEM specimen preparation. The FIB lift-out technique is a powerful specimen preparation method. However, there are instances where the “traditional” FIB method of specimen preparation may be more suitable. The traditional FIB method requires that specimens must be prepared so that the area of interest is as thin as possible (preferably less than 50 μm) prior to FIB milling. Automating the initial specimen preparation for brittle materials (e.g., Si wafers) may be performed using the combination of cleaving and sawing techniques as described below.

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