scholarly journals Using a Focused Ion Beam (FIB) System to Extract TEM-Ready Samples from Complex Metallic and Ceramic Structures

1999 ◽  
Vol 7 (2) ◽  
pp. 12-15 ◽  
Author(s):  
Lucille A. Giannuzzi ◽  
Richard Young ◽  
Pete Carleson
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Magnetic Media ◽  
Tem Analysis ◽  
Micro Fabrication ◽  
Site Specific ◽  
Transmission Electron ◽  
Two Sides

AbstractDriven by the analytical needs of microelectronics, magnetic media and micro-fabrication industries, focused ion beam (FIB) systems are now capable of milling and manipulating samples for the analysis of microstructure features having dimensions of 180 nm or less, A technique for locating and extracting site specific specimens for examination by transmission electron microscopy (TEM) has been developed. An identified feature can be located and precisely milled with an FIB system from two sides to prepare an ultrathin sample, and then extracted from the region with a glass rod micromanipulator onto a grid for TEM analysis. This specimen preparation method has been applied to semiconductor failure analysis and to the study of metallic and ceramic microsiructures with irregular topographies and complex mufti-layered components.

Microstructural Characterization of Automated Specimen Preparation for TEM Analysis

2000 ◽  
Vol 6 (S2) ◽  
pp. 528-529
Author(s):  
C. Urbanik Shannon ◽  
L. A. Giannuzzi ◽  
E. M. Raz
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Area Of Interest ◽  
Transmission Electron ◽  
Preparation Techniques

Automated specimen preparation for transmission electron microscopy has the obvious advantage of saving personnel time. While some people may perform labor intensive specimen preparation techniques quickly, automated specimen preparation performed in a timely and reproducible fashion can significantly improve the throughput of specimens in an industrial laboratory. The advent of focused ion beam workstations for the preparation of electron transparent membranes has revolutionized TEM specimen preparation. The FIB lift-out technique is a powerful specimen preparation method. However, there are instances where the “traditional” FIB method of specimen preparation may be more suitable. The traditional FIB method requires that specimens must be prepared so that the area of interest is as thin as possible (preferably less than 50 μm) prior to FIB milling. Automating the initial specimen preparation for brittle materials (e.g., Si wafers) may be performed using the combination of cleaving and sawing techniques as described below.

To Eliminate Curtain Effect of FIB TEM Samples by a Combination of Sample Dicing and Backside Milling

2014 ◽  
Author(s):  
Jian-Shing Luo ◽  
Hsiu Ting Lee
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Preparation Method ◽  
Low Cost ◽  
Ion Beam ◽  
Sample Preparation Method ◽  
Site Specific ◽  
Dual Beam ◽  
Transmission Electron

Abstract Several methods are used to invert samples 180 deg in a dual beam focused ion beam (FIB) system for backside milling by a specific in-situ lift out system or stages. However, most of those methods occupied too much time on FIB systems or requires a specific in-situ lift out system. This paper provides a novel transmission electron microscopy (TEM) sample preparation method to eliminate the curtain effect completely by a combination of backside milling and sample dicing with low cost and less FIB time. The procedures of the TEM pre-thinned sample preparation method using a combination of sample dicing and backside milling are described step by step. From the analysis results, the method has applied successfully to eliminate the curtain effect of dual beam FIB TEM samples for both random and site specific addresses.

A Methodology to Reduce Ion Beam Induced Damage in TEM Specimens Prepared by FIB

2002 ◽  
Author(s):  
Chin Kai Liu ◽  
Chi Jen. Chen ◽  
Jeh Yan.Chiou ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Sensitive Issue ◽  
Transmission Electron

Abstract Focused ion beam (FIB) has become a useful tool in the Integrated Circuit (IC) industry, It is playing an important role in Failure Analysis (FA), circuit repair and Transmission Electron Microscopy (TEM) specimen preparation. In particular, preparation of TEM samples using FIB has become popular within the last ten years [1]; the progress in this field is well documented. Given the usefulness of FIB, “Artifact” however is a very sensitive issue in TEM inspections. The ability to identify those artifacts in TEM analysis is an important as to understanding the significance of pictures In this paper, we will describe how to measure the damages introduced by FIB sample preparation and introduce a better way to prevent such kind of artifacts.

Focused Ion Beam Milling and Micromanipulation Lift-Out for Site Specific Cross-Section Tem Specimen Preparation

1997 ◽  
Vol 480 ◽  
Author(s):  
L. A. Giannuzzi ◽  
J. L. Drown ◽  
S. R. Brown ◽  
R. B. Irwin ◽  
F. A. Stevie
Keyword(s):  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specific Area ◽  
Specimen Preparation ◽  
Tem Analysis ◽  
Site Specific ◽  
Area Of Interest ◽  
Carbon Coated ◽  
A Site

AbstractA site specific technique for cross-section transmission electron microscopy specimen preparation of difficult materials is presented. Focused ion beams are used to slice an electron transparent sliver of the specimen from a specific area of interest. Micromanipulation lift-out procedures are then used to transport the electron transparent specimen to a carbon coated copper grid for subsequent TEM analysis. The experimental procedures are described in detail and an example of the lift-out technique is presented.

TEM FIB Lift-Out of Mount Saint Helens Volcanic Ash

1999 ◽  
Vol 5 (S2) ◽  
pp. 908-909
Author(s):  
J.L. Drown-MacDonald ◽  
B.I. Prenitzer ◽  
T.L. Shofner ◽  
L.A. Giannuzzi
Keyword(s):  
Cross Sections ◽  
Volcanic Ash ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron ◽  
Silver Paint

Focused Ion Beam (FIB) specimen preparation for both scanning and transmission electron microscopy (SEM and TEM respectively) has seen an increase in usage over the past few years. The advantage to the FIB is that site specific cross sections (or plan view sections) may be fabricated quickly and reproducibly from numerous types of materials using a finely focused beam of Ga+ ions [1,2]. It was demonstrated by Prenitzer et al. that TEM specimens may be acquired from individual Zn powder particles by employing the FIB LO specimen preparation technique [3]. In this paper, we use the FIB LO technique to prepare TEM specimens from Mount Saint Helens volcanic ash.Volcanic ash from Mount Saint Helens was obtained at the Microscopy and Microanalysis 1998 meeting in Atlanta. TEM analysis of the ash was performed using the FIB lift out technique [1]. Ash powders were dusted onto an SEM sample stud that had been coated with silver paint.

scholarly journals Combined Focused Ion Beam-Ultramicrotomy Method for TEM Specimen Preparation of Porous Fine-Grained Materials

2019 ◽  
Vol 26 (1) ◽  
pp. 120-125 ◽  
Author(s):  
Kenta K. Ohtaki ◽  
Hope A. Ishii ◽  
John P. Bradley
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Combined Method ◽  
Fine Grained ◽  
Heterogeneous Samples ◽  
Transmission Electron ◽  
Fine Grained Material ◽  
The One

AbstractA new transmission electron microscopy (TEM) specimen preparation method that utilizes a combination of focused ion beam (FIB) methods and ultramicrotomy is demonstrated. This combined method retains the benefit of site-specific sampling by FIB but eliminates ion beam-induced damage except at specimen edges and allows recovery of many consecutive sections. It is best applied to porous and/or fine-grained materials that are amenable to ultramicrotomy but are located in bulk samples that are not. The method is ideal for unique samples from which every specimen is precious, and we demonstrate its utility on fine-grained material from the one-of-a-kind Paris meteorite. Compared with a specimen prepared by conventional FIB methods, the final sections are uniformly thin and free from re-deposition and curtaining artifacts common in FIB specimens prepared from porous, heterogeneous samples.

A Preparation Method of Diamond Specimens Using an Advanced FIB Microscopy for Micro and Nanoanalysis

2012 ◽  
Vol 531-532 ◽  
pp. 592-595
Author(s):  
Yi Qing Chen ◽  
Feng Zai Tang ◽  
Liang Chi Zhang
Keyword(s):  
Focused Ion Beam ◽  
Preparation Method ◽  
Ion Beam ◽  
Polycrystalline Diamond ◽  
Specimen Preparation ◽  
Atomic Lattice ◽  
Cross Sectional ◽  
Site Specific ◽  
Dual Beam

This paper reports the specimen preparation using an advanced dual beam focused ion beam (FIB) technique for bulk polycrystalline diamond (PCD) composites after dynamic friction polishing (DFP). The technique adapted allows for precisely processing diamond materials at the specific polishing track sites of PCD surface, from which large cross-sectional specimens for SEM/EDS/Raman microanalysis could be successfully created. In addition, an in-situ lift-out method was developed to prepare the site-specific HRTEM specimens which were thin enough for imaging the atomic lattice of diamond and for conducting EELS analysis.

scholarly journals Automated TEM Sample Preparation

2000 ◽  
Vol 8 (5) ◽  
pp. 14-19 ◽  
Author(s):  
Wayne D. Kaplan ◽  
Efrat Raz ◽  
Colin Smith
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Milling Time ◽  
Preparation Method ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Tem Analysis ◽  
Transmission Electron ◽  
Sample Edge ◽  
Specific Distance

The rising demand in the semiconductor industry for higher spatial resolution in the analysis of device defects has focused attention on the use of transmission electron microscopy (TEM). However, conventional TEM sample preparation can be difficult and time-consuming, and, depending on the operator, may result in a low yield of quality specimens. One solution to this problem is the use of focused ion beam (FIB) milling for the final stage of TEM sample preparation. However, specimens have to be mechanically thinned prior to FIB and the need to characterize specific devices requires a pre-FIB preparation method that can target specific features on the wafer. We will discuss an innovative and automated solution that isolates specific devices and prepares TEM specimens for subsequent FIB thinning. The complete pre-FIB preparation takes less than 30 minutes and yields a sample in which the targeted feature is positioned a specific distance from the sample edge, thereby minimizing final FIB milling time. The output specimen is automatically packaged for FIB milling and TEM analysis. We also present drawings of the process flow and examples showing TEM results from tungsten filled vias.

TEM Sample Preparation for the Semiconductor Industry — Part 3

1996 ◽  
Vol 4 (6) ◽  
pp. 24-25
Author(s):  
John F. Walker
Keyword(s):  
Sample Preparation ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Focused Ion Beams ◽  
Accurate Identification ◽  
Tem Analysis ◽  
Site Specific ◽  
Transmission Electron

Part 1 of this series described how focused ion beam (FIB) microsurgery is used to successfully cross-section and prepare materialspecific samples for SEM and TEM analysis. In Part 2, we detailed how FIB is also the tool of choice to prepare site-specific samples, particularly for transmission electron microscopy (TEM) analysis. In this final article of this series, we describe actual sample preparation, cutting a selected area la size and mounting it on a grid for FIB preparation. Focused ion beams are very useful in preparing TEM specimens that have unique characteristics. In particular, the ability of such systems to image submicron features within a structure has allowed accurate identification of the precise place to make a membrane.

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