Transport Properties of Photovoltaic Devices Via Optical Hall Effect

Author(s):  
Prakash Uprety ◽  
2011 ◽  
Vol 519 (9) ◽  
pp. 2593-2600 ◽  
Author(s):  
T. Hofmann ◽  
C.M. Herzinger ◽  
J.L. Tedesco ◽  
D.K. Gaskill ◽  
J.A. Woollam ◽  
...  

2015 ◽  
Vol 40 (12) ◽  
pp. 2688 ◽  
Author(s):  
S. Knight ◽  
S. Schöche ◽  
V. Darakchieva ◽  
P. Kühne ◽  
J.-F. Carlin ◽  
...  

1987 ◽  
Vol 4 (10) ◽  
pp. 1183-1188 ◽  
Author(s):  
U Gottwick ◽  
R Held ◽  
G Sparn ◽  
F Steglich ◽  
H Rietschel ◽  
...  

2020 ◽  
Vol 101 (24) ◽  
Author(s):  
X. N. Zhao ◽  
W. Xu ◽  
Y. M. Xiao ◽  
J. Liu ◽  
B. Van Duppen ◽  
...  

2016 ◽  
Vol 852 ◽  
pp. 935-938 ◽  
Author(s):  
Fen Qiao

Recently, photovoltaic devices based on colloidal semiconductor nanocrystals (NCs) have attracted a great interest due to their flexible synthesis with tunable band gaps and shape-dependent optical and electronic properties. However, the surface of NCs typically presents long chain with electrically insulating organic ligands, which hinder the device applications for NCs. So the major challenge of NCs for photovoltaic devices application is to decrease the inter NC space and the height of the tunnel barriers among NCs, therefore increase the transport properties of NCs. In this article, recent development of colloidal semiconductor NCs and possible routes for improving transport properties of colloidal NCs were reviewed. Among those methods, the thermal annealing approach provides a simple and cost-effective way to fabricate superlattice and to decrease the inter-space among NCs, which may be used for the preparation of other nanocrystalline superstructure and functional devices.


2006 ◽  
Vol 511-512 ◽  
pp. 371-376 ◽  
Author(s):  
G. Adamopoulos ◽  
T. Heiser ◽  
U. Giovanella ◽  
S. Ould-Saad ◽  
K.I. van de Wetering ◽  
...  

2008 ◽  
Vol 5 (5) ◽  
pp. 1386-1390 ◽  
Author(s):  
T. Hofmann ◽  
C. von Middendorff ◽  
V. Gottschalch ◽  
M. Schubert

2001 ◽  
Vol 668 ◽  
Author(s):  
Susanne Siebentritt ◽  
Andreas Gerhard ◽  
Stephan Brehme ◽  
Martha Ch. Lux-Steiner

ABSTRACTChalcopyrites are doped by intrinsic defects, therefore their doping behavior depends on their composition. The doping and transport properties of epitaxial CuGaSe2 layers prepared under varying Cu excess have been investigated by temperature dependent Hall effect and conductivity measurements. Two acceptors, 134 meV and 80 meV deep, and a high degree of compensation, increasing with decreasing Cu excess, are found. The temperature dependence of the mobility indicates scattering with phonons, demonstrating high quality material. Defect scattering dominates at lower temperatures for CuGaSe2 grown under moderate Cu excess. CuGaSe2 grown under little or no Cu excess shows transport in a defect band at lower temperatures.


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