scholarly journals The study of transparent conducting gallium doped ZnO thin films in order to use in solar cells

2018 ◽  
Vol 6 (2) ◽  
pp. 56
Author(s):  
Mojtaba Mahmoudzadeh Pirvahshi
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Growth Direction ◽  
Zno Thin Films ◽  
Visible Range ◽  
Chemical Spray Pyrolysis ◽  
Range Data ◽  
Transparent Conducting ◽  
Doped Zno

In this study, transparent conducting Ga-doped ZnO thin films were deposited on glass substrate using chemical spray pyrolysis technique. The effect of Ga-doping concentration (0, 1, 2 and 3 at.%) on microstructural, optical and electrical characteristics of layers have been investigated. The studies of X-ray diffraction and optical transmission spectra show these films have a hexagonal wurtzite structure with (002) preferred growth direction, also a high transmission of 85-95% in visible range. Data analysis show that the band gap energies in these films are varying in the range of 3.27-3.33 eV, consistent with the Burstein-Moss shift effect, with Urbach tail widths between 114-160 meV. The 2 wt% Ga sample showed the maximum figure of merit (3×10-2Ω-1), with an electron concentration and sheet resistance of ~1.42×1019 cm-3 and 13 kΩ/square, respectively.  

scholarly journals Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Kalyani Nadarajah ◽  
Ching Yern Chee ◽  
Chou Yong Tan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Spray Pyrolysis Technique ◽  
Hexagonal Wurtzite Structure ◽  
Ambient Air ◽  
Zno Thin Films ◽  
Visible Range ◽  
X Ray ◽  
Average Grain Size ◽  
Vis Spectroscopy

Zinc Oxide (ZnO) thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM), atomic force microscopy (AFM), and X-ray diffractometry (XRD) techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL) technique. X-ray diffraction data showed that the films were grown in the (002) direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm).

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

scholarly journals Effect of Gallium Incorporation on the Properties of ZnO Thin Films

2019 ◽  
Author(s):  
Sema Kurtaran ◽  
Serhat Aldağ ◽  
Göksu Öföfoğlu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Zno Thin Films ◽  
Visible Range ◽  
Zno Films ◽  
Spray Pyrolysis Method ◽  
Chemical Spray Pyrolysis ◽  
Atomic Force ◽  
Doped Zno ◽  
Ga Doping

Ga doped ZnO thin films were formed by the Ultrasonic Chemical Spray Pyrolysis method onto substrates using zinc acetate and gallium (III) nitrate hydrate as precursors. The structural, optical, surface and electrical properties were studied as a function of increasing Ga doping concentration from 0 to 6 at %. Structural studies were shown polycrystalline with a hexagonal crystal structure. The transparency in the visible range was around 85% for thin film deposited using 6 at % Ga doping. With the aim of determining surface images and surface roughness of the films atomic force microscope images were taken. Ga doping of ZnO thin films could markedly decrease surface roughness. Electrical resistivity was determined by four point method. The resistivity 2.0% Ga doped ZnO film was the lowest resistivity of 1.7 cm. In the photoluminescence measurements of the films, existence of UV and defect emission band was observed. As a result, Ga doped ZnO films have advanced properties and promising materials for solar cells.

Transparent conducting properties of Mg and Al co-doped ZnO thin films deposited by spray pyrolysis technique

2019 ◽  
Vol 127 ◽  
pp. 61-65 ◽  
Author(s):  
O. Karzazi ◽  
L. Soussi ◽  
A. Louardi ◽  
A. El Bachiri ◽  
M. Khaidar ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Zno Thin Films ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Co Doped

Structural, Optical and Electrical Properties of ZnO Sprayed Thin Films Doped with Fluorine

2011 ◽  
Vol 324 ◽  
pp. 253-256 ◽  
Author(s):  
A. Douayar ◽  
Raquel Diaz ◽  
P. Prieto ◽  
Mohammed Abd-Lefdil
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis Technique ◽  
Secondary Phase ◽  
Visible Range ◽  
Zno Films ◽  
Chemical Spray Pyrolysis ◽  
Glass Substrates ◽  
Hexagonal Wurtzite Crystal Structure ◽  
Doped Zno ◽  
Diffraction Patterns

F-doped ZnO films (FZO) of about 400 nm thicknesses were prepared on glass substrates by the chemical spray pyrolysis technique. X-ray diffraction patterns showed that the undoped and F-doped ZnO films exhibit the hexagonal wurtzite crystal structure with a preferential orientation along [002] direction. No secondary phase is observed in F-doped ZnO films. All films exhibit a transmittance around 80% in the visible range. Photoluminescence spectra at room temperature of undoped and F doped ZnO thin films are presented. The wide PL bands centered at 510 and 680 nm are characteristic of deep levels of oxygen vacancies in the ZnO matrix, and zinc interstitial position. The FZO films are degenerate and exhibit n-type electrical conductivity. The lowest electrical resistivity was 7.6 10−3 Ω cm.

Effect of La Doping on ZnO Thin Films by Spray Pyrolysis

2019 ◽  
Vol 397 ◽  
pp. 206-212 ◽  
Author(s):  
Allag Nassiba ◽  
Ben Haoua Boubaker ◽  
Saied Chahnez ◽  
Barani Djamel ◽  
Segueni Leila ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Visible Region ◽  
Hexagonal Wurtzite Structure ◽  
Optical Transmittance ◽  
Zno Thin Films ◽  
Uv Detectors ◽  
Light Emitting ◽  
Doped Zno

In this study, Zinc oxide (ZnO) undoped and Lanthanum doped (ZnO: La) thin films were deposited on 400°C heated glass using spray pyrolysis technique with moving nozzle. The components (Zn (CH3COO)2, 2H2O) and (LaCl3, 7H2O) were used as sources to produce ZnO thin film and doped Lanthanum, respectively. Effects of dopant on the optical and structural properties of undoped and 0, 2 and 4 wt. % Lanthanum doped ZnO thin films were studied. Optical transmittance spectra of the films showed high transparency of about 98% in visible region. The optical gap for ZnO and 0, 2 and 4 wt. % La doped ZnO thin films were found to be in 3.25-3.28 [eV] range. The X-ray diffraction showed that the thin films have hexagonal wurtzite structure with a strong (002) as preferred orientation, whereas the crystalline size was ranged in 15.89-33.45 nm. The ZnO thin films are promising to be used a light emitting diodes, gas sensor and UV detectors applications.

Characterization of Transparent Conducting Al-Doped ZnO Thin Films and Device Applications

2007 ◽  
Vol 51 (12) ◽  
pp. 79 ◽  
Author(s):  
Sang Hern LEE ◽  
Young Moon YU ◽  
Tae Hoon KIM ◽  
Se-Young JEONG
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Transparent Conducting ◽  
Device Applications ◽  
Doped Zno
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