Electrical Conductivity and Thermal Activation Energies in Cu2O Single Crystals

AbstractTlBr single crystals grown by the Bridgman–Stockbarger method are studied. It is established that frozen-conductivity effects manifest themselves under interband excitation by light at temperatures below 200 K. Herewith, clearly pronounced superlinear dependences of the induced photoconductivity on the strength of the applied electric field manifest themselves. The results of studying thermally stimulated conductivity evidence that these phenomena can be associated with the filling of trap states with thermal activation energies of 0.08–0.12 eV. This state can be removed due to thermal quenching at temperatures of ≳180 K because of the emptying of energy states with an activation energy of 0.63–0.65 eV filled after optical generation.

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Электропроводность монокристаллов MnGaInSе-=SUB=-4-=/SUB=- на переменном токе

Письма в журнал технической физики ◽

10.21883/pjtf.2020.11.49493.18241 ◽

2020 ◽

Vol 46 (11) ◽

pp. 19

Author(s):

Н.Н. Нифтиев ◽

Ф.М. Мамедов ◽

М.Б. Мурадов

Keyword(s):

Electrical Conductivity ◽

Single Crystal ◽

Frequency Dependence ◽

Electric Current ◽

Single Crystals ◽

Activation Energies ◽

Temperature Range ◽

Temperature Dependences ◽

Alternating Electric Current

The results of studying the frequency and temperature dependences of the electrical conductivity of MnGaInSe4 single crystals on alternating electric current are presented. It was found that in the temperature range of 295.5–360 K at frequencies of 2•104–106 Hz, the regularity σ ∼ fS (0.1≤ s≤1.0) holds for electrical conductivity. It is shown that in the MnGaInSe4 single crystal the frequency dependence of electrical conductivity can be explained using the multiplet model, and the conductivity in these single crystals is characterized by a band-hop mechanism. Based on the dependences log σ ∼ 103/T, the activation energies are determined.

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On the Electronic Properties of Silicon-Tellurium Films

MRS Proceedings ◽

10.1557/proc-49-225 ◽

1985 ◽

Vol 49 ◽

Author(s):

F.A. Faris ◽

A. Al-Jassar ◽

F.G. Wakim ◽

K.Z. Botros

Keyword(s):

Electrical Conductivity ◽

Electron Microscope ◽

Electronic Properties ◽

Thermal Activation ◽

Ultrahigh Vacuum ◽

Activation Energies ◽

Silicon Films ◽

Optical Measurements ◽

Vacuum System ◽

Optical Gap

AbstractSilicon and Silicon-Tellurium films were prepared in an ultrahigh vacuum system. The d.c. electrical conductivity of these films were measured under vacuum before exposing them to the air. The thermal activation energies of Silicon-Tellurium films were always found to be greater than that of Silicon films. Furthermore the optical measurements on Silicon-Tellurium films indicated that the optical gap of these films decreases as the concentration of tellurium in the films increases. Electron microscope examinations revealed that the films were amorphous in structure and homogeneous in composition.

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Influence of annealing on the electrical conductivity of single crystals of Cu2O

Canadian Journal of Physics ◽

10.1139/p70-010 ◽

1970 ◽

Vol 48 (1) ◽

pp. 63-69 ◽

Cited By ~ 18

Author(s):

F. L. Weichman ◽

R. Kužel

Keyword(s):

Activation Energy ◽

Electrical Conductivity ◽

Low Temperature ◽

Single Crystals ◽

Activation Energies ◽

Conductivity Measurements ◽

Different Temperatures ◽

Temperature Activation ◽

The Stability ◽

Stability Ranges

A series of conductivity measurements were made on single crystals of Cu2O from 20 to 840 °C to explain the various activation energies which appear at different temperatures and oxygen pressures. Crystals were annealed in the 10−8 and 10−4 Torr region in the stability ranges of Cu2O, Cu, and CuO at various temperatures. For the low-temperature activation energies ranging from 0.60 to 0.26 eV, an excellent agreement with the empirical Meyer–Neldel rule was found. The highest activation energy of 1.12 eV in the 570 to 680 °C range at 10−8 Torr is associated with the boundary between the two stable phases Cu and Cu2O. The changes in defect concentration are ascribed to the mechanism of self-compensation. The energy-level diagram proposed by Bloem is adequate to explain the present results.

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