Electrical properties of La2−x, Srx,CoO4—I: Structure, electrical conductivity, and Seebeck coefficient of single crystals x = 0.0, 0.5, 1.0 and 1.5)

1988 ◽  
Vol 49 (12) ◽  
pp. 1403-1408 ◽  
Author(s):  
Takashi Matsuura ◽  
Junji Tabuchi ◽  
Junichiro Mizusaki ◽  
Smgeru Yamauchi ◽  
Kazuo Fueki
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Single Crystals

Electrical Properties of AlN-SiC Ceramics

2006 ◽  
Vol 317-318 ◽  
pp. 641-644
Author(s):  
Ryota Kobayashi ◽  
Junichi Tatami ◽  
Toru Wakihara ◽  
Takeshi Meguro ◽  
Katsutoshi Komeya
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Gas Flow ◽  
Room Temperature ◽  
Xrd Analysis ◽  
Sic Ceramics ◽  
Sic Ceramic ◽  
Powder Compacts ◽  
Electrical Conductors

AlN-SiC ceramics with 0 to 75 mol% of AlN were fabricated through pressureless sintering of very fine AlN and SiC. Powder compacts with different amounts of AlN were fired at 2000°C for 1 h in Argon gas flow using an induction-heating furnace. The microstructure and phases present in the products were evaluated using SEM and XRD. The AlN-SiC ceramics had a porous structure with 30% porosity, and the grain size was increased with the addition of AlN. XRD analysis showed that 2H was a main phase in all samples, though 3C and 6H phases were found in 25 mol%AlN-75 mol%SiC ceramic. The electrical properties of the AlN-SiC ceramics were evaluated at various temperatures ranging from room temperature to 300°C. The electrical conductivity of the AlN-SiC ceramics depended on the amount of AlN and on the temperature. The 75 mol%AlN-SiC ceramic had higher electrical resistance, though the other samples were electrical conductors. The highest electrical conductivity was obtained with the 25 mol% AlN composition, which was 7 S/m at room temperature and 30 S/m at 300°C. The Seebeck coefficient for the AlN-SiC ceramics increased with rising temperatures. The AlN-SiC ceramics with 50 mol%AlN had the highest Seebeck coefficient of 220 2V/K at 300°C.

Electrical conductivity and seebeck coefficient of Si2Te3 single crystals

1976 ◽  
Vol 37 (1) ◽  
pp. K97-K99 ◽  
Author(s):  
K. Ziegler ◽  
H.-D. Junker ◽  
U. Birkholz
Keyword(s):  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Single Crystals

Inter-cluster distance dependence of electrical properties in single crystals of a mixed-valence polyoxometalate

2017 ◽  
Vol 46 (37) ◽  
pp. 12619-12624 ◽  
Author(s):  
Ryo Tsunashima ◽  
Ippei Nakamura ◽  
Rika Oue ◽  
Seiya Koga ◽  
Hirofumi Oki ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Single Crystals ◽  
Mixed Valence ◽  
Distance Dependence ◽  
Cluster Distance

Electrical conductivity of [MoV2MoVI16O54(SO3)2]6− was investigated through dependence on the inter-cluster distance controlled by tetraethylammonium, tetrapropylammonium, and tetrabutylammonium cations.

Notizen: Electrical Conduction in Thioxanthene

1976 ◽  
Vol 31 (9) ◽  
pp. 1301-1302
Author(s):  
S. Pietra ◽  
A. Tenaglia
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Single Crystals ◽  
Electrical Conduction

Electrical conductivity of thioxanthene single crystals has been observed. The electrons, injected from the electrodes or freed by sulphur atoms, are responsible for the electrical properties. The activation energy for the conduction is higher than in thianthrene, it depends maybe on the number of S atoms in the molecule.

scholarly journals Electrical Properties of Cd Doped InSe Crystals

2019 ◽  
Vol 19 (2) ◽  
pp. 159-162
Author(s):  
V.M. Kaminskii ◽  
Z.D. Kovalyuk ◽  
V.I. Ivanov ◽  
I.G. Tkachyuk ◽  
V.V. Netyaga
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Electric Field ◽  
Single Crystals ◽  
Indium Selenide ◽  
Alternating Electric Field

The measurements of electrical conductivity along (alternating electric field) and across (direct electric field)the crystallographic C axis of Cd‐doped indium selenide single crystals are carried out. The parameters of thehopping conductivity of InSe <Cd> are calculated.

scholarly journals Electrical properties of cation-substituted Ag7(Si1–xGex)S5I single crystals

2021 ◽  
Vol 24 (3) ◽  
pp. 241-247
Author(s):  
I.P. Studenyak ◽  
◽  
A.I. Pogodin ◽  
I.A. Shender ◽  
M.J. Filep ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Single Crystals ◽  
Solid Solutions ◽  
Frequency Range ◽  
Electronic Components ◽  
High Quality ◽  
Crystallization Method ◽  
Vertical Zone ◽  
Nyquist Plots

High-quality single crystals of Ag7(Si1–xGex)S5I (x = 0.2, 0.4, 0.6, 0.8) solid solutions are grown from the solution–melt by vertical zone crystallization method. The measurements of electrical conductivity of Ag7(Si1–xGex)S5I solid solutions were performed using the impedance spectroscopy method within the frequency range from 10 Hz up to 2·106 Hz and temperature interval 293–383 K. Ionic and electronic components of electrical conductivity, as well as their ratios, were determined using the Nyquist plots.

The Effect of Nano-SiO2 Addition on Electrical Properties of the Thermoelectric Compound Ca3Co4O9

2012 ◽  
Vol 465 ◽  
pp. 292-295 ◽  
Author(s):  
Wei Wei Sun ◽  
Wen Hao Fan ◽  
Shao Ping Chen ◽  
Yi Yun Li ◽  
Qing Sen Meng
Keyword(s):  
Electrical Conductivity ◽  
Electrical Properties ◽  
Seebeck Coefficient ◽  
Electric Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Sio2 Content ◽  
Nano Sio2

Abstract. Ca3CO4O9/x wt.%SiO2 composites were prepared by using field-activated pressure-assisted synthesis(FAPAS) process. The effects of nano-SiO2 addition on the microstructure and thermoelectric properties of the Ca3CO4O9 were investigated. With an increasing of the of SiO2 content, the size of Ca3Co4O9 particles decreased. The Seebeck coefficient decreased after the doping of nano-SiO2. The electrical conductivity firstly increased and then decreased with increasing amount of nano-SiO2 and the highest value belong to the Ca3CO4O9/0.5 wt.% SiO2 - sample. With the highest electric conductivity and slightly decreased Seebeck coefficient, the Ca3CO4O9/0.5 wt.%SiO2-sample achieved the highest power factor of 0.349 mw/mk2 at 800 °C, which is 8% higher than the value of pure Ca3CO4O9 reported in the literature.

The Thermoelectric Performance Enhancement of N-Type BiTeSe Alloys by Addition of ZnAlO

2012 ◽  
Vol 512-515 ◽  
pp. 1647-1650
Author(s):  
Ting Zhang ◽  
Jun Jiang ◽  
Sheng Hui Yang ◽  
Yong Biao Zhai ◽  
Gao Jie Xu
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Seebeck Coefficient ◽  
Ambient Temperature ◽  
Performance Enhancement ◽  
Zone Melting ◽  
Melting Method ◽  
Intrinsic Excitation

A series of n-type BiTeSe/ZnAlO composites were prepared by zone melting method. Thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient α and thermal conductivity κ, were measured in the temperature range of 300-550K. Results show that the electrical properties have been slightly lowered due to the reduced carrier concentration by ZnAlO addition. However, the low-temperature-shifted peak α, resulting from the prematurely happened intrinsic excitation, have shifted peak ZT to lower temperatures. As a result, the ZT values at 300 K were significantly enhanced for BiTeSe/ZnAlO composites compared to that of BiTeSe, making more attractive for cooling applications at ambient temperature.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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