Electron Energy Loss Spectroscopy (EELS) for Quantification of Cell-Wall Penetration of a Melamine Resin

Holzforschung ◽  
1999 ◽  
Vol 53 (2) ◽  
pp. 111-117 ◽  
Author(s):  
A.O. Rapp ◽  
H. Bestgen ◽  
W. Adam ◽  
R.-D. Peek

Summary A literature survey was performed to find progress in techniques for monitoring penetration of synthetic resins in wood cell walls. Electron energy loss spectroscopy (EELS) in combination with transmission electron microscopy (TEM) was successfully applied for the high resolution examination of the distribution of a partly methylated hydroxymethyl melamine resin in Norway spruce (Picea abies Karst.) earlywood cell walls. The nitrogen of the resin was found as clearly detectable signals in all layers of the lignified cell wall, thus allowing the quantification of resin which had penetrated into the different layers. Possible principles of decay protection of wood which has been upgraded with low concentrated aqueous solutions of modified hydroxymethyl melamine resins with medium to low hydroxymethyl/melamine ratios are discussed.

Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.


Author(s):  
Isabelle His ◽  
Iain M. R. Mackinnon ◽  
Mazz Marry ◽  
I. Max Huxham ◽  
Michael C. Jarvis

2000 ◽  
Vol 6 (S2) ◽  
pp. 208-209
Author(s):  
Huifang Xu ◽  
Pingqiu Fu

Laihunite that has distorted olivine-type structure with ferric and ferrous irons and ordered distribution of vacancies was first discovered in a high-grade metamorphosed banded iron formation (BIF) [1, 2]. The laihunite coexisting with fayalite (Fe-olivine), magnetite, quartz, ferrosilite, garnet and hedenbergite, formed in the process of oxidation of fayalite [2, 3]. The structure refinement of 1-layer laihunite shows P21/b symmetry and ordered distribution of vacancies in half M1 sites of olivine structure [2, 3]. Early high-resolution transmission electron microscopy (HRTEM) study and HRTEM image simulation of the 1-layer laihunite verified the structure refinement [4].Specimens of weakly oxidized fayalite and laihunite containing fayalite islands collected from Xiaolaihe and Menjiagou of Liaoning Province, NE China, have been studied using selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM), electron energy-loss spectroscopy (EELS), and X-ray energy-dispersive spectroscopy.


Author(s):  
R. Kumar ◽  
P.J. Phillips ◽  
R.F. Klie

AlxGa1-xN nanowires have promising applications in ultraviolet light emitting diodes (LEDs). However, these nanowires are not typical p-n junction semiconductors, but rather rely on varying concentrations of Al versus Ga to produce electron hole pairs. More information on the atomic structure is needed to better understand the properties of these nanowires. In this study, AlxGa1-xN nanowires were imaged using scanning transmission electron microscopy (STEM) and compared to computer simulated STEM images to obtain physical information on the nanowires. Electron energy-loss spectroscopy (EELS) and FEFF9 computer simulations were also performed to better understand the structural and chemical properties of the nanowires. Results from these simulations showed that changes in the chemical ordering of the nanowires were responsible for changes in intensity and resolution in the images. These intensity and resolution trends were not a result of interface effects. This will help to further characterize nanowires in the future.


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