scholarly journals Comparative study of all-optical INVERTER and BUFFER gates using MZI structure

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Pallavi Singh ◽  
Ashutosh Kumar Singh ◽  
Vanya Arun ◽  
Devendra K Tripathi
Keyword(s):  
Extinction Ratio ◽  
Low Complexity ◽  
Optical Amplifier ◽  
Destructive Interference ◽  
Eye Diagram ◽  
Pump And Probe ◽  
All Optical ◽  
High Scalability ◽  
Comparative Results ◽  
Optical Gates

AbstractIn the paper, one input optical gates i.e., INVERTER and BUFFER have been designed using some basic assumption to analyze with the help of Semi-conductor Optical Amplifier based Mach–Zehnder Interferometer structure. The results are optimized by iterative process. The proposed design of optical gates presents low complexity, high scalability and more feasible to evaluate through digital Boolean analyzation. The digital Boolean analyzation is analyzed by some basic Boolean rules and assumptions which makes the design more digital so that it can be compatible for more than one input optical gates also. Optical Gate is designed to get constructive and destructive interference for pump and probe as they are injected into SOA simultaneously. The phase modulation is converted into intensity modulation which gives a Boolean result. The paper is optimized by Eye diagram, Q factor, wavelength spectrum and frequency chirp for both the gates. The comparative results of extinction ratio for both the gates have also been discussed. The design is supported by theoretical analysis, simulation tool (Optsim) and Boolean explanation. The proposed designs are constructed with same pattern which supports the same Boolean analysis.

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Optical Amplifier ◽  
Majority Voting ◽  
Polarization Rotation ◽  
All Optical ◽  
Eye Opening ◽  
Amplified Spontaneous Emission Noise ◽  
Quality Factor Q

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.

scholarly journals All-Optical Logic Gates: Designs, Classification, and Comparison

2014 ◽  
Vol 2014 ◽  
pp. 1-13 ◽  
Author(s):  
Pallavi Singh ◽  
Devendra Kr. Tripathi ◽  
Shikha Jaiswal ◽  
H. K. Dixit
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Logic Gates ◽  
Optical Amplifier ◽  
Current Status ◽  
Optical Logic ◽  
Optical Logic Gates ◽  
All Optical ◽  
Optical Gates

The paper reviews the current status and designs of all-optical gates. Various schemes with and without semiconductor optical amplifiers are discussed and compared. The optical gates are classified according to their design structures. It is divided into two major divisions that is, nonsemiconductor optical amplifier based gates and semiconductor optical amplifier based gates. In nonsemiconductor optical amplifier based gates, different schemes have been proposed to create non-linearity which is discussed. The semiconductor optical amplifier based gates of different design structures are discussed to show the probe pulse that is modulated in different ways to obtain results.

Extinction ratio improvement by an all-optical signal regenerator with a semiconductor optical amplifier and a Sagnac loop

2006 ◽  
Vol 266 (1) ◽  
pp. 80-87
Author(s):  
Er’el Granot ◽  
Shalva Ben-Ezra ◽  
Reuven Zaibel ◽  
Haim Chayet ◽  
Niv Narkiss ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Amplifier ◽  
Optical Signal ◽  
All Optical

Evaluating RSOA Performance with Optical Logic Gates at 100 Gbps Data Rate

2018 ◽  
Vol 0 (0) ◽  
Author(s):  
Devendra Kr. Tripathi
Keyword(s):  
Carrier Density ◽  
Extinction Ratio ◽  
Optical Computing ◽  
Logic Gates ◽  
Optical Amplifier ◽  
Data Rate ◽  
Optical Logic ◽  
Active Length ◽  
Optical Logic Gates ◽  
All Optical

AbstractAll optical logic gates are the key elements of contemporary optical computing unit. For that non-linear attribute of reflective semiconductor optical amplifier (RSOA) is exploited to configure optical logic gates. Accordingly, in the manuscript all optical OR/NOR/Buffer binary logic network for the nonreturn to zero format has been designed. Its operation at 100 Gbps data rate has been successfully realized. For the applied data inputs in nonreturn to zero patterns, their corresponding output waveforms for the stated logic action have been verified. Numerical investigations for the imperative design constraints as data rate, injected power and imperative elements of the semiconductor optical amplifiers (SOAs) pump current, carrier density, active length, confine factor, laser power has been appropriately executed with optimum performance. It has depicted good extinction ratio (>10 dB) performance with confine factor more than 0.2 and higher carrier density of amplifier. Further, it also accomplished, that for the OR, buffer logic execution with lower power of pump laser and for the NOR logic execution higher power laser pump source is required. The proposed design could fulfill need for the impending higher data rate composite optical computing units.

Design and performance analysis of all optical 4-bit parity generator and checker using dual-control dual SOA terahertz optical asymmetric demultiplexer (DCDS-TOAD)

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Kajal Maji ◽  
Kousik Mukherjee ◽  
Ashif Raja
Keyword(s):  
Performance Analysis ◽  
Spontaneous Emission ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Amplified Spontaneous Emission ◽  
Control Input ◽  
Eye Diagram ◽  
All Optical ◽  
And Performance ◽  
Amplified Spontaneous Emission Noise

AbstractTera hertz optical asymmetric demultiplexer (TOAD) using two semiconductor optical amplifiers and two control signals has been used to design an all optical parity checker and generator. The same circuit can generate and check both even and odd parity using a control input. The numerical simulation using Matlab 2007b is done for performance analysis of the proposed device in terms of output bit pattern, amplified spontaneous emission (ASE) noise, extinction ratio, contrast ratio, pseudo eye diagram, relative eye opening (98.9% for 20 dB gain and 96.21% for 10 dB gain) and their variation with input control pulse energy, amplified spontaneous emission noise factor for different unsaturated gain. The simulated value of E.R. = 81.39 dB, C.R. = 83.15 dB, REOP = 98.9% and Q value = 86.16 dB are found for this proposal.

scholarly journals Design of all-optical AND logic gate at 20 Gb/s based on SOA-MI with optimum injection current and length of TWA-SOA

2019 ◽  
Vol 15 (7) ◽  
Author(s):  
Jackson Moreira Oliveira ◽  
Hudson Afonso Batista Silva ◽  
Fabio Barros Sousa ◽  
Jorge Everaldo Oliveira ◽  
Marcos Benedito Caldas Costa
Keyword(s):  
Numerical Simulation ◽  
Directional Coupler ◽  
Logic Gate ◽  
Michelson Interferometer ◽  
Optical Filter ◽  
Optical Amplifier ◽  
Injection Current ◽  
Logical Function ◽  
Eye Diagram ◽  
All Optical

The manuscript presents Design of All-optical AND logic gate at 20 Gb/s using Semiconductor Optical Amplifier based on Michelson Interferometer (SOA-MI). The paper shows a comprehensive numerical simulation using OptiSystem software to examine two-input logical function (with 8-bit). Used the CW Laser, Dual Directional Coupler, 100% reflective linear Fiber Bragg Grating (FBG) and Optical Filter, and investigated the optimum injection current and length of the TWA-SOA for obtaining the best result Q-Factor and BER based on Eye diagram to logic gate. To the best of our knowledge, this is the first report on a numerical simulation of an All-Optical AND logic gate at 20 Gb/s with SOA-MI using co-propagating, structure with results ensure good performance of the proposed design.

scholarly journals Polarization-Discriminated RSOA–EAM for Colorless Transmitter in WDM–PON

2020 ◽  
Vol 10 (24) ◽  
pp. 9049
Author(s):  
Chengliang Zuo ◽  
Xun Li
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Rotation Angle ◽  
Extinction Ratio ◽  
Optical Amplifier ◽  
High Gain ◽  
Multiple Quantum ◽  
Polarization Rotation ◽  
Eye Diagram

The integrated reflective semiconductor optical amplifier (RSOA) and electro-absorption modulator (EAM) is viewed as an appealing solution to the colorless transmitter on the optical network unit (ONU) side of wavelength-division multiplexed (WDM) passive optical networks (PONs), for its broad modulation bandwidth and high optical gain. However, the conventional RSOA–EAM usually exhibits a poor upstream signal eye-diagram because it can hardly simultaneously saturate the downstream signal and boost the upstream signal as required. By exploiting the polarization-depended RSOA gain, we propose a polarization-discriminated RSOA–EAM to improve the quality of the upstream signal eye-diagram. In this device, the transverse electric polarized downstream signal is saturated by the high gain in the RSOA active region made of compressively strained multiple quantum wells, whereas the upstream signal is linearly amplified after polarization rotation. We find that, as the quality of the upstream signal eye-diagram improves with an increased polarization rotation angle, its power drops, which indicates that there exists an optimized rotation angle to reach a compromise between the upstream signal integrity and power. Simulation results show that the dynamic extinction ratio and output power of the upstream signal can reach 8.3 dB and 11 dBm, respectively, through the proposed device with its rotation angle set at an optimum value (80°), which exceeds the specification (6 dB and 4 dBm) of the upstream transmitter as required by the next-generation PON stage two. The quality of the upstream signal eye-diagram measured in Q-factor is improved by 10 dB compared to the conventional RSOA–EAM design without polarization rotation introduced.

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