scholarly journals Polarization-Discriminated RSOA–EAM for Colorless Transmitter in WDM–PON

2020 ◽  
Vol 10 (24) ◽  
pp. 9049
Author(s):  
Chengliang Zuo ◽  
Xun Li
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Rotation Angle ◽  
Extinction Ratio ◽  
Optical Amplifier ◽  
High Gain ◽  
Multiple Quantum ◽  
Polarization Rotation ◽  
Eye Diagram

The integrated reflective semiconductor optical amplifier (RSOA) and electro-absorption modulator (EAM) is viewed as an appealing solution to the colorless transmitter on the optical network unit (ONU) side of wavelength-division multiplexed (WDM) passive optical networks (PONs), for its broad modulation bandwidth and high optical gain. However, the conventional RSOA–EAM usually exhibits a poor upstream signal eye-diagram because it can hardly simultaneously saturate the downstream signal and boost the upstream signal as required. By exploiting the polarization-depended RSOA gain, we propose a polarization-discriminated RSOA–EAM to improve the quality of the upstream signal eye-diagram. In this device, the transverse electric polarized downstream signal is saturated by the high gain in the RSOA active region made of compressively strained multiple quantum wells, whereas the upstream signal is linearly amplified after polarization rotation. We find that, as the quality of the upstream signal eye-diagram improves with an increased polarization rotation angle, its power drops, which indicates that there exists an optimized rotation angle to reach a compromise between the upstream signal integrity and power. Simulation results show that the dynamic extinction ratio and output power of the upstream signal can reach 8.3 dB and 11 dBm, respectively, through the proposed device with its rotation angle set at an optimum value (80°), which exceeds the specification (6 dB and 4 dBm) of the upstream transmitter as required by the next-generation PON stage two. The quality of the upstream signal eye-diagram measured in Q-factor is improved by 10 dB compared to the conventional RSOA–EAM design without polarization rotation introduced.

scholarly journals Low-Threshold, High-Power On-Chip Tunable III-V/Si Lasers with Integrated Semiconductor Optical Amplifiers

2021 ◽  
Vol 11 (23) ◽  
pp. 11096
Author(s):  
Joan Manel Ramírez ◽  
Pierre Fanneau de la Horie ◽  
Jean-Guy Provost ◽  
Stéphane Malhouitre ◽  
Delphine Néel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Networks ◽  
Optical Amplifiers ◽  
Semiconductor Optical Amplifiers ◽  
Optical Amplifier ◽  
Silicon On Insulator ◽  
Total Power ◽  
Multiple Quantum ◽  
Total Power Consumption ◽  
On Chip

Heterogeneously integrated III-V/Si lasers and semiconductor optical amplifiers (SOAs) are key devices for integrated photonics applications requiring miniaturized on-chip light sources, such as in optical communications, sensing, or spectroscopy. In this work, we present a widely tunable laser co-integrated with a semiconductor optical amplifier in a heterogeneous platform that combines AlGaInAs multiple quantum wells (MQWs) and InP-based materials with silicon-on-insulator (SOI) wafers containing photonic integrated circuits. The co-integrated device is compact, has a total device footprint of 0.5 mm2, a lasing current threshold of 10 mA, a selectable wavelength tuning range of 50 nm centered at λ = 1549 nm, a fiber-coupled output power of 10 mW, and a laser linewidth of ν = 259 KHz. The SOA provides an on-chip gain of 18 dB/mm. The total power consumption of the co-integrated devices remains below 0.5 W even for the most power demanding lasing wavelengths. Apart from the above-mentioned applications, the co-integration of compact widely tunable III-V/Si lasers with on-chip SOAs provides a step forward towards the development of highly efficient, portable, and low power systems for wavelength division multiplexed passive optical networks (WDM-PONs).

Polarization rotation-based all-optical AND gate using single semiconductor optical amplifier and implementation of a majority gate

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ashif Raja ◽  
Kousik Mukherjee ◽  
Jitendra Nath Roy
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Contrast Ratio ◽  
Optical Amplifier ◽  
Majority Voting ◽  
Polarization Rotation ◽  
All Optical ◽  
Eye Opening ◽  
Amplified Spontaneous Emission Noise ◽  
Quality Factor Q

Abstract Semiconductor optical amplifier-based polarization rotation is utilized in designing all-optical AND gate at 100 Gbps. The AND gate shows high extinction ratio (ER ∼ 15 dB), contrast ratio (CR ∼ 18 dB) and quality factor (Q-factor ∼ 16 dB). The effect of the amplified spontaneous emission noise on the performances is also investigated. The AND gate has relative eye opening (REO) varying from 93.52 to 97.1% for 10–30 dB unsaturated gain. Using the AND gate a majority voting gate is designed and analyzed and has Q ∼ 11.7 dB with REO ∼ 91%.

scholarly journals Comparative study of all-optical INVERTER and BUFFER gates using MZI structure

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Pallavi Singh ◽  
Ashutosh Kumar Singh ◽  
Vanya Arun ◽  
Devendra K Tripathi
Keyword(s):  
Extinction Ratio ◽  
Low Complexity ◽  
Optical Amplifier ◽  
Destructive Interference ◽  
Eye Diagram ◽  
Pump And Probe ◽  
All Optical ◽  
High Scalability ◽  
Comparative Results ◽  
Optical Gates

AbstractIn the paper, one input optical gates i.e., INVERTER and BUFFER have been designed using some basic assumption to analyze with the help of Semi-conductor Optical Amplifier based Mach–Zehnder Interferometer structure. The results are optimized by iterative process. The proposed design of optical gates presents low complexity, high scalability and more feasible to evaluate through digital Boolean analyzation. The digital Boolean analyzation is analyzed by some basic Boolean rules and assumptions which makes the design more digital so that it can be compatible for more than one input optical gates also. Optical Gate is designed to get constructive and destructive interference for pump and probe as they are injected into SOA simultaneously. The phase modulation is converted into intensity modulation which gives a Boolean result. The paper is optimized by Eye diagram, Q factor, wavelength spectrum and frequency chirp for both the gates. The comparative results of extinction ratio for both the gates have also been discussed. The design is supported by theoretical analysis, simulation tool (Optsim) and Boolean explanation. The proposed designs are constructed with same pattern which supports the same Boolean analysis.

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

scholarly journals The impact of purging on the quality of AlGaN/GaN multiple quantum wells grown on AlN/sapphire template

2017 ◽  
Vol 844 ◽  
pp. 012015
Author(s):  
Shuchang Wang ◽  
Xiong Zhang ◽  
Zili Wu ◽  
Jianguo Zhao ◽  
Qian Dai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
The Impact

scholarly journals Recent Progress on Ge/SiGe Quantum Well Optical Modulators, Detectors, and Emitters for Optical Interconnects

Photonics ◽  
2019 ◽  
Vol 6 (1) ◽  
pp. 24 ◽  
Author(s):  
Papichaya Chaisakul ◽  
Vladyslav Vakarin ◽  
Jacopo Frigerio ◽  
Daniel Chrastina ◽  
Giovanni Isella ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Electric Fields ◽  
Silicon Germanium ◽  
Optical Interconnects ◽  
Stark Effect ◽  
Extinction Ratio ◽  
Optical Loss ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Absorption Mechanism

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for the realization of Si-based optical modulators, photodetectors, and light emitters for short distance optical interconnects on Si chips. Ge quantum wells incorporated between SiGe barriers, allowing a strong electro-absorption mechanism of the quantum-confined Stark effect (QCSE) within telecommunication wavelengths. In this review, we respectively discuss the current state of knowledge and progress of developing optical modulators, photodetectors, and emitters based on Ge/SiGe quantum wells. Key performance parameters, including extinction ratio, optical loss, swing bias voltages, and electric fields, and modulation bandwidth for optical modulators, dark currents, and optical responsivities for photodetectors, and emission characteristics of the structures will be presented.

Reduced Recovery Time Semiconductor Optical Amplifier Using p-Type-Doped Multiple Quantum Wells

2006 ◽  
Vol 18 (22) ◽  
pp. 2323-2325 ◽  
Author(s):  
L. Zhang ◽  
I. Kang ◽  
A. Bhardwaj ◽  
N. Sauer ◽  
S. Cabot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Semiconductor Optical Amplifier ◽  
Recovery Time ◽  
Optical Amplifier ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
P Type

InGaN/GaN Multiple Quantum Well Blue LEDs on 3C-SiC/Si Substrate

2011 ◽  
Vol 679-680 ◽  
pp. 801-803
Author(s):  
Ji Sheng Han ◽  
Sima Dimitrjiev ◽  
Li Wang ◽  
Alan Iacopi ◽  
Qu Shuang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Light Emission ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Structural Quality ◽  
Multiple Quantum ◽  
Si Substrate ◽  
Si Substrates

Gallium nitrides are primarily used for their excellent light emission properties. GaN LEDs are mostly grown on foreign substrates, essentially sapphire and SiC, but more recently, also on Si substrates. In this paper, we will demonstrate that the high structural quality of InGaN/GaN multiple quantum wells can be deposited on 3C-SiC/Si (111) substrate using MOCVD. This demonstrates that 3C-SiC/Si is a promising template for the epitaxial growth of InGaN/GaN multiple quantum wells for LEDs.

High Quality In1-x(Gax)AsyP1-y/InP Compressive Strained Quantum Well Structures Grown by LP-MOCVD

1996 ◽  
Vol 421 ◽  
Author(s):  
J. T. Zhu ◽  
A. R. Clawson ◽  
P. K. L. Yu
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
High Quality ◽  
Quantum Well Structures ◽  
Mocvd Growth ◽  
Buried Heterostructure ◽  
Strained Quantum Well

AbstractWe report the results of the growth of InAsyP1−y /InP and In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 compressive strained multiple quantum wells (CSMQW) structures grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Our studies showed high quality 1.06 μm InAs0.21P0.79/InP CSMQW structure with 6 periods can be obtained when the growth temperature is around 650°C and the pressure in the reactor is about 20 Torr. When the well thickness and composition are tuned for wavelength around 1.30 μm, the quality of this structure degrades. By employing 1.1 μm wavelength, lattice-matched InGaAsP as the barrier layers and setting the growth temperature at 600 °C, high quality 1.30 μm wavelength In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW materials with 10 periods can also be obtained. The materials were characterized with high resolution x-ray rocking curves, room and low temperature photoluminescence (PL). The 15K full-width-at-half-maximums (FWHM) of the PL peaks for 1.06 μm InAs0.21P0.79/InP and 1.30 μm In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW structures are 5.6 meV and 4.97 meV, respectively, which are among the smallest FWHMs reported up to date for these kinds of MOCVD growth materials. Buried heterostructure lasers at 1.3 μm wavelength have been obtained with the CSMQWs as the active layer.

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