Growth rates of dinoflagellates along the Karachi coast assessed by the size fractionation method

AbstractThe in situ growth rates of dinoflagellates along the Karachi coast off Pakistan was studied by the size fractionated method during winter (February 2006) and summer (May 2007). The growth rate per day ranged from -2.87 to 2.3 d

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Influence of trematode infections on in situ growth rates of Littorina littorea

Journal of the Marine Biological Association of the United Kingdom ◽

10.1017/s002531549800054x ◽

1999 ◽

Vol 79 (3) ◽

pp. 425-430 ◽

Cited By ~ 16

Author(s):

Kim N. Mouritsen ◽

A. Gorbushin ◽

K. Thomas Jensen

Keyword(s):

Growth Rate ◽

Life History ◽

Growth Rates ◽

Environmental Conditions ◽

Differential Effect ◽

Littorina Littorea ◽

In Situ Growth ◽

Trematode Infections ◽

Effect On Growth

The influence of various species of digenean trematodes on the in situ growth rate of Littorina littorea (Gastropoda: Prosobranchia) from different habitats was investigated. The main results showed: (1) that infections either reduced or had no significant effect on growth in comparison with uninfected snails; (2) that the same type of infection could have a differential effect on growth depending on the habitat/population from which the snails originated. These findings are consistent with the life history hypothesis expecting no or a stunting effect of trematode infections on the growth of longer-lived snails, but do also emphasize that growth rates following trematode invasion can be significantly modified by environmental conditions, such as, food availability.

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In situ growth rate measurements for plasma processing of opaque materials

Thin Solid Films ◽

10.1016/s0040-6090(02)00696-x ◽

2002 ◽

Vol 418 (2) ◽

pp. 151-155

Author(s):

A Salifu ◽

G Zhang ◽

Edward A Evans

Keyword(s):

Growth Rate ◽

Plasma Processing ◽

In Situ Growth

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Single Crystal Silicon Carbide On Silicon Using A Supersonic Gas Jet Of Methylsilane

MRS Proceedings ◽

10.1557/proc-483-279 ◽

1997 ◽

Vol 483 ◽

Cited By ~ 1

Author(s):

S. A. Ustin ◽

C. Long ◽

L. Lauhon ◽

W. Ho

Keyword(s):

Growth Rate ◽

Growth Rates ◽

Single Crystal Silicon ◽

Maximum Growth ◽

X Ray Diffraction ◽

Crystal Silicon ◽

Cross Sectional ◽

Supersonic Molecular Beam ◽

Transmission Electron

AbstractCubic SiC films have been grown on Si(001) and Si(111) substrates at temperatures between 600 °C and 900 °C with a single supersonic molecular beam source. Methylsilane (H3SiCH3) was used as the sole precursor with hydrogen and nitrogen as seeding gases. Optical reflectance was used to monitor in situ growth rate and macroscopic roughness. The growth rate of SiC was found to depend strongly on substrate orientation, methylsilane kinetic energy, and growth temperature. Growth rates were 1.5 to 2 times greater on Si(111) than on Si(001). The maximum growth rates achieved were 0.63 μm/hr on Si(111) and 0.375μm/hr on Si(001). Transmission electron diffraction (TED) and x-ray diffraction (XRD) were used for structural characterization. In-plane azimuthal (ø-) scans show that films on Si(001) have the correct 4-fold symmetry and that films on Si(111) have a 6-fold symmetry. The 6-fold symmetry indicates that stacking has occurred in two different sequences and double positioning boundaries have been formed. The minimum rocking curve width for SiC on Si(001) and Si(111) is 1.2°. Fourier Transform Infrared (FTIR) absorption was performed to discern the chemical bonding. Cross Sectional Transmission Electron Microscopy (XTEM) was used to image the SiC/Si interface.

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