High resolution X-ray diffraction of MOVPE-grown ZnO/GaN/sapphire layers

2004 ◽  
Vol 219 (4) ◽  
Author(s):  
Steffi Deiter ◽  
Helvi Witek ◽  
Nikolay Oleynik ◽  
Jürgen Bläsing ◽  
Armin Dadgar ◽  
...  
Keyword(s):  
Fine Structure ◽  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Growth Parameters ◽  
Metalorganic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Wide Gap

AbstractHigh quality ZnO is an interesting material for electronic and optoelectronic applications. It belongs to the wide gap semiconductors (bandgap = 3.3 eV). In this paper we present ZnO layers grown by MOVPE (metalorganic vapor phase epitaxy). Several growth parameters like growth temperature and thickness of the layer were varied. For comprehensive investigations of the crystalline quality we employed different X-ray fine structure methods.

High-resolution X-ray diffraction analysis of InN films grown by metalorganic vapor phase epitaxy

2007 ◽  
Vol 22 (3) ◽  
pp. 219-222
Author(s):  
W. J. Wang ◽  
K. Sugita ◽  
Y. Nagai ◽  
Y. Houchin ◽  
A. Hashimoto ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Crystalline Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Symmetric Reflection

The growth temperature dependence of the InN film’s crystalline quality is reported. InN films are grown on sapphire substrates from 570 to 650 °C with low-temperature GaN buffers by metalorganic vapor phase epitaxy (MOVPE). The X-ray rocking curves and reciprocal space mappings of the symmetric reflection (0 0 0 2) and asymmetric reflection (1 0 1 2) are measured with high resolution X-ray diffraction. The results indicate that the crystallinity is sensitive to the growth temperature for MOVPE InN. At growth temperature 580 °C, highly crystalline InN film has been obtained, for which the full-width-at-half-maxima of (0 0 0 2) and (1 0 1 2) rocking curves are 24 and 28 arcmin, respectively. The crystalline quality deteriorates drastically when the growth temperature exceeds 600 °C. Combined with the carrier concentration and mobility, the approach to improve the quality of InN film by MOVPE is discussed.

Characterization of lattice mosaic ofa-plane GaN grown onr-plane sapphire by metalorganic vapor-phase epitaxy

2005 ◽  
Vol 892 ◽  
Author(s):  
Kazuhide Kusakabe ◽  
Shizutoshi Ando ◽  
Kazuhiro Ohkawa
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Morphological Transition ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Sapphire Substrates

AbstractNonpolara-plane GaN films were grown on r-plane sapphire substrates by atmospheric metalorganic vapor-phase epitaxy. The as-grown layers were studied by high-resolution x-ray diffraction. Thea-plane GaN lattice mosaic is orientation dependent as determined by x-ray rocking curve (XRC) measurements. The tilt mosaic measured with the c-axis within the scattering plane (c-mosaic) was greater than the mosaic measured with the m-axis within the scattering plane (m-mosaic). The mosaic along both azimuths decreased and thec-mosaic/m-mosaic ratio was increased with increase of growth temperature from 1050 °C to 1080 °C. The morphological transition was correlated to change in thea-plane GaN tilt mosaic measured by XRC.

X-Ray Diffraction Analysis of Heteroepitaxial Cd1-yZnyTe on GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
S. M. Johnson ◽  
W. L. Ahlgren ◽  
M. T. Smith ◽  
B. C. Johnston ◽  
S. Sen
Keyword(s):  
Plastic Deformation ◽  
High Resolution ◽  
Epitaxial Growth ◽  
Vapor Phase ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Tilt Boundary ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray

ABSTRACTX-ray diffraction techniques were used to evaluate Cd1-yZnyTe grown on GaAs substrate orientations of {100}2°, {111}, {012}, and {123}. High-quality layers having compositions at or close to the CdTe and ZnTe binary end points can be grown on GaAs, but most of the ternary compositions have extremely broad rocking curves. Layers grown on {123} and {012} were found to have large tilts toward {111} about <121> that varied systematically with the lattice mismatch; this is consistent with the mismatch being accommodated by the formation of a low-angle tilt boundary at the interface. {111} layers were found to be twinned, and thus {100}2° and {123} appear to better suited for vapor-phase epitaxial growth (VPE). High-resolution x-ray diffractometer measurements showed that the lattice mismatch is almost entirely taken up by plastic deformation, and only a small tetragonal distortion was measured. CdTe was distorted more than ZnTe, and a greater distortion was measured for layers grown on {100}2° than on {111}, in agreement with estimates made using bulk elastic constants.

High Resolution X-ray Diffraction and X-ray Topography Study of Gan on A12O3

1998 ◽  
Vol 512 ◽  
Author(s):  
J. Chaudhuri ◽  
M. Hooe Ng ◽  
D. D. Koleske ◽  
A. E. Wickenden ◽  
R. L. Henry
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Dislocation Density ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Reduced Pressure ◽  
X Ray

ABSTRACTHigh resolution x-ray diffraction and x-ray topography study of GaN thin films, grown on sapphire (00.1) substrate by reduced pressure metalorganic vapor phase epitaxy under various conditions, were performed. An attempt was made to correlate the mobility in films with similar carrier concentration with the strain and dislocation density. X-ray topography revealed the defects present in the film.

EFFECT OF HEAT TREATMENT ON MICROSTRUCTURE AND MAGNETOSTRICTIVE PROPERTY OF MELT-SPUN Fe85Ga15 RIBBONS

2013 ◽  
Vol 27 (30) ◽  
pp. 1350174 ◽  
Author(s):  
HAO LIU ◽  
HAIOU WANG ◽  
MENGXIONG CAO ◽  
WEISHI TAN ◽  
YANGGUANG SHI ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Fine Structure ◽  
High Resolution ◽  
Nearest Neighbor ◽  
Annealed Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Absorption Fine ◽  
Melt Spun ◽  
X Ray Absorption

In order to study the microstructure of Fe – Ga alloy, Fe 85 Ga 15 ribbons prepared with different wheel velocity were studied by high resolution X-ray diffraction (HRXRD) and extend X-ray absorption fine structure (EXAFS). HRXRD patterns showed that only disordered A 2 phase was observed in as-cast Fe 85 Ga 15 alloy. A modified- DO 3 phase was detected in all of the melt spun samples. The HRXRD associated with EXAFS results indicated that Ga atoms were located as second-nearest neighbor along [100] orientation. A little DO 3 phase was found in ribbons annealed at 1000°C under 0.06 MPa Ar atmosphere. The result of magnetostriction measurement revealed that in the ribbon prepared with higher wheel velocity, more modified- DO 3 phase will enhance the magnetostriction. DO 3 phase in the annealed sample will deteriorate the magnetostrictive properties of Fe – Ga ribbons.

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