1700 V/20 mΩ SiC Junction Transistors (SJTs) were recently released by GeneSiC with specific on-resistance as low as 2.3 mΩ-cm2, and current gain > 100. This paper benchmarks the electrical characteristics of the 1700 V SJTs against two best-in-class Si IGBTs. The SJT features 47% and 49% lower on-state voltage drops than the two Si IGBTs, respectively, with the SJT operating at 175°C, and the IGBTs at 150°C. The conduction power loss of the best Si IGBT is 2.2 times larger than the SJT at 25°C, and 1.6 times larger at 150°C. The leakage currents measured on the best IGBT at 1700 V and 150°C is 0.93 mA, as compared to 200 nA for the SJT at 175°C. As compared to the SJT, 3.6x and 3.3x higher (hard) switching energy losses are measured on the best 1700 V Si IGBT, at 25°C, and 150°C, respectively, when switching at a DC link voltage of 1200 V.
Electrical characteristics of the high-current self-magnetic pinch diode of the gamma-1 pulsed electron accelerator