scholarly journals Influence of ion implantation on the near-surface structure of thin Ni and Pd films on lithium niobate and lithium tantalate

2007 ◽  
Vol 10 (2) ◽  
pp. 76-80 ◽  
Author(s):  
V. O. Lysiuk ◽  
◽  
1997 ◽  
Vol 36 (Part 1, No. 7A) ◽  
pp. 4323-4325 ◽  
Author(s):  
Fei Lu ◽  
Ming-Qi Meng ◽  
Ke-Ming Wang ◽  
Xiang-Dong Liu ◽  
Huan-Chu Chen

2009 ◽  
Vol 1181 ◽  
Author(s):  
Jens Jensen ◽  
Ruy Sanz ◽  
Mirian Jaafar ◽  
Manuel Hernández-Vélez ◽  
Agustina Asenjo ◽  
...  

AbstractWe present result following localized ion implantation of rutile titanium dioxide (TiO2) using anodic porous alumina as a mask. The implantation were performed with 100 keV56Fe+ions using a fluence of 1.3·1016ions/cm2. The surface modifications where studied by means of SEM, AFM/MFM and XRD. A well-defined hexagonal pattern of modified material in the near surface structure is observed. Local examination of the implanted areas revealed no clear magnetic signal. However, a variation in mechanical and electrostatic behavior between implanted and non-implanted zones is inferred from the variation in AFM signals.


Author(s):  
John D. Rubio

The degradation of steam generator tubing at nuclear power plants has become an important problem for the electric utilities generating nuclear power. The material used for the tubing, Inconel 600, has been found to be succeptible to intergranular attack (IGA). IGA is the selective dissolution of material along its grain boundaries. The author believes that the sensitivity of Inconel 600 to IGA can be minimized by homogenizing the near-surface region using ion implantation. The collisions between the implanted ions and the atoms in the grain boundary region would displace the atoms and thus effectively smear the grain boundary.To determine the validity of this hypothesis, an Inconel 600 sample was implanted with 100kV N2+ ions to a dose of 1x1016 ions/cm2 and electrolytically etched in a 5% Nital solution at 5V for 20 seconds. The etched sample was then examined using a JEOL JSM25S scanning electron microscope.


Author(s):  
D.I. Potter ◽  
M. Ahmed ◽  
K. Ruffing

Ion implantation, used extensively for the past decade in fabricating semiconductor devices, now provides a unique means for altering the near-surface chemical compositions and microstructures of metals. These alterations often significantly improve physical properties that depend on the surface of the material; for example, catalysis, corrosion, oxidation, hardness, friction and wear. Frequently the mechanisms causing these beneficial alterations and property changes remain obscure and much of the current research in the area of ion implantation metallurgy is aimed at identifying such mechanisms. Investigators thus confront two immediate questions: To what extent is the chemical composition changed by implantation? What is the resulting microstructure? These two questions can be investigated very fruitfully with analytical electron microscopy (AEM), as described below.


Crystals ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 288
Author(s):  
Sven Reitzig ◽  
Michael Rüsing ◽  
Jie Zhao ◽  
Benjamin Kirbus ◽  
Shayan Mookherjea ◽  
...  

Nonlinear and quantum optical devices based on periodically-poled thin film lithium niobate (PP-TFLN) have gained considerable interest lately, due to their significantly improved performance as compared to their bulk counterparts. Nevertheless, performance parameters such as conversion efficiency, minimum pump power, and spectral bandwidth strongly depend on the quality of the domain structure in these PP-TFLN samples, e.g., their homogeneity and duty cycle, as well as on the overlap and penetration depth of domains with the waveguide mode. Hence, in order to propose improved fabrication protocols, a profound quality control of domain structures is needed that allows quantifying and thoroughly analyzing these parameters. In this paper, we propose to combine a set of nanometer-to-micrometer-scale imaging techniques, i.e., piezoresponse force microscopy (PFM), second-harmonic generation (SHG), and Raman spectroscopy (RS), to access the relevant and crucial sample properties through cross-correlating these methods. Based on our findings, we designate SHG to be the best-suited standard imaging technique for this purpose, in particular when investigating the domain poling process in x-cut TFLNs. While PFM is excellently recommended for near-surface high-resolution imaging, RS provides thorough insights into stress and/or defect distributions, as associated with these domain structures. In this context, our work here indicates unexpectedly large signs for internal fields occurring in x-cut PP-TFLNs that are substantially larger as compared to previous observations in bulk LN.


Author(s):  
B. Svecova ◽  
P. Nekvindova ◽  
A. Mackova ◽  
J. Oswald ◽  
J. Vacik ◽  
...  

2016 ◽  
Vol 213 (8) ◽  
pp. 2044-2050 ◽  
Author(s):  
Felipe Fávaro de Oliveira ◽  
Seyed Ali Momenzadeh ◽  
Denis Antonov ◽  
Helmut Fedder ◽  
Andrej Denisenko ◽  
...  

2001 ◽  
Vol 48 (1) ◽  
pp. 322-328 ◽  
Author(s):  
I.E. Kuznetsova ◽  
B.D. Zaitsev ◽  
S.G. Joshi ◽  
I.A. Borodina

Sign in / Sign up

Export Citation Format

Share Document